Spectral Dependence of the Photoplastic Effect in CdZnTe and CdZnTeSe.

We studied the spectral dependence of the Vickers microhardness HV0.025 of CdZnTe and CdZnTeSe samples upon illumination and found out that it increases over the entire applied spectral range of 1540-750 nm. We also found out that the photoconductivity and microhardness are correlated. We observed changes in the correlation diagram (change of slope and an abrupt change of HV0.025 at several wavelengths of the illuminating light). Based on measurements of the relative changes of the space charge upon illumination using the Pockels effect, we suggest that the observed spectral dependence of positive photoplastic effect in CdZnTe and CdZnTeSe can be explained by the trapping of photoinduced electrons and holes, which affects the motion of the partial dislocations. The underlying physical explanation relies on the assumption that reconstructed bonds break before dislocation glide.

Mapping of inhomogeneous quasi-3D electrostatic field in electro-optic materials.

This paper describes a new method for direct measurement and evaluation of the inhomogeneous electrostatic vector field with translational symmetry in electro-optic materials exhibiting the Pockels effect. It is based on the evaluation of maximum transmittance of low intensity light passing through a sample under a voltage bias. Here, the sample is located between rotating crossed polarizers, and camera images are obtained at each point to determine the electric field. The evaluation procedure is demonstrated using data acquired on a CdZnTeSe quasi-hemispheric semiconductor gamma-ray detector. In addition to CdTe-related compounds, the method can be used for various other materials showing [Formula: see text] symmetry such as GaAs, CdTe, GaP, 3C-SiC, and ZnS. Furthermore, it can be generalized to other crystalline materials showing the Pockels effect. The method can be used to probe the space charge and the electric field in several kinds of electronic components and devices, as well as provide useful data on the role of defects, contact configurations and other surface and bulk inhomogeneities in the material that can affect the distribution of the internal electric field.

Low-Temperature Annealing of CdZnTeSe under Bias.

We performed a gradual low-temperature annealing up to 360 K on a CdZnTeSe radiation detector equipped with gold and indium electrodes under bias at both polarities. We observed significant changes in the detector's resistance and space-charge accumulation. This could potentially lead to the control and improvement of the electronic properties of the detector because the changes are accompanied with the reduction in the bulk dark current and surface leakage current. In this article, we present the results of a detailed study of the internal electric field and conductivity changes in CdZnTeSe detector for various annealing steps under bias taking into account different polarities during annealing and subsequent characterization. We observed that low-temperature annealing results in an increase in the barrier height at the contacts that, in general, reduces the dark current and decreases the positive space charge present in the sample compared to the pre-annealed condition.

Influence of Surface and Bulk Defects on Contactless Resistivity Measurements of CdTe and Related Compounds.

We analyzed the influence of parameters of deep levels in the bulk and conditions on the surface on transient charge responses of semi-insulating samples (CdTe and GaAs). We studied the dependence on the applied bias step used for the experimental evaluation of resistivity in contactless measurement setups. We used simulations based on simultaneous solutions of 1D drift diffusion and Poisson's equations as the main investigation tool. We found out that the resistivity can be reliably determined by the transient contactless method in materials with a large density of deep levels in the bulk (e.g., semi-insulating GaAs) when the response curve is described by a single exponential. In contrast, the materials with the low deep-level density, like semiconductor radiation detector materials (e.g., CdTe, CdZnTe, etc.), usually exhibit a complex response to applied bias, depending on the surface conditions. We show that a single exponential fit does not represent the true relaxation time and resistivity, in this case. A two-exponential fit can be used for a rough estimate of bulk material resistivity only in a limit of low-applied bias, when the response curve approaches a single-exponential shape. A decreasing of the bias leads to a substantially improved agreement between the evaluated and true relaxation time, which is also consistent with the approaching of the relaxation curve to the single-exponential shape.

Evaluation of CdZnTeSe as a high-quality gamma-ray spectroscopic material with better compositional homogeneity and reduced defects.

X- and gamma-ray detectors have broad applications ranging from medical imaging to security, non-proliferation, high-energy physics and astrophysics. Detectors with high energy resolution, e.g. less than 1.5% resolution at 662 keV at room temperature, are critically important in most uses. The efficacy of adding selenium to the cadmium zinc telluride (CdZnTe) matrix for radiation detector applications has been studied. In this paper, the growth of a new quaternary compound Cd0.9Zn0.1Te0.98Se0.02 by the Traveling Heater Method (THM) is reported. The crystals possess a very high compositional homogeneity with less extended defects, such as secondary phases and sub-grain boundary networks. Virtual Frisch-grid detectors fabricated from as-grown ingots revealed ~0.87-1.5% energy resolution for 662-keV gamma rays. The superior material quality with a very low density of defects and very high compositional homogeneity heightens the likelihood that Cd0.9Zn0.1Te0.98Se0.02 will be the next generation room-temperature detector material.

Dynamics of native oxide growth on CdTe and CdZnTe X-ray and gamma-ray detectors.

We studied the growth of the surface oxide layer on four different CdTe and CdZnTe X-ray and gamma-ray detector-grade samples using spectroscopic ellipsometry. We observed gradual oxidization of CdTe and CdZnTe after chemical etching in bromine solutions. From X-ray photoelectron spectroscopy measurements, we found that the oxide consists only of oxygen bound to tellurium. We applied a refined theoretical model of the surface layer to evaluate the spectroscopic ellipsometry measurements. In this way we studied the dynamics and growth rate of the oxide layer within a month after chemical etching of the samples. We observed two phases in the evolution of the oxide layer on all studied samples. A rapid growth was visible within five days after the chemical treatment followed by semi-saturation and a decrease in the growth rate after the first week. After one month all the samples showed an oxide layer about 3 nm thick. The oxide thickness was correlated with leakage current degradation with time after surface preparation.

Infrared LED Enhanced Spectroscopic CdZnTe Detector Working under High Fluxes of X-rays.

This paper describes an application of infrared light-induced de-polarization applied on a polarized CdZnTe detector working under high radiation fluxes. We newly demonstrate the influence of a high flux of X-rays and simultaneous 1200-nm LED illumination on the spectroscopic properties of a CdZnTe detector. CdZnTe detectors operating under high radiation fluxes usually suffer from the polarization effect, which occurs due to a screening of the internal electric field by a positive space charge caused by photogenerated holes trapped at a deep level. Polarization results in the degradation of detector charge collection efficiency. We studied the spectroscopic behavior of CdZnTe under various X-ray fluxes ranging between 5 × 10 5 and 8 × 10 6 photons per mm 2 per second. It was observed that polarization occurs at an X-ray flux higher than 3 × 10 6 mm - 2 ·s - 1 . Using simultaneous illumination of the detector by a de-polarizing LED at 1200 nm, it was possible to recover X-ray spectra originally deformed by the polarization effect.

ALG6-CDG: a recognizable phenotype with epilepsy, proximal muscle weakness, ataxia and behavioral and limb anomalies.

INTRODUCTION: Alpha-1,3-glucosyltransferase congenital disorder of glycosylation (ALG6-CDG) is a congenital disorder of glycosylation. The original patients were described with hypotonia, developmental disability, epilepsy, and increased bleeding tendency. METHODS: Based on Euroglycan database registration, we approached referring clinicians and collected comprehensive data on 41 patients. RESULTS: We found hypotonia and developmental delay in all ALG6-CDG patients and epilepsy, ataxia, proximal muscle weakness, and, in the majority of cases, failure to thrive. Nine patients developed intractable seizures. Coagulation anomalies were present in <50 % of cases, without spontaneous bleedings. Facial dysmorphism was rare, but seven patients showed missing phalanges and brachydactyly. Cyclic behavioral change, with autistic features and depressive episodes, was one of the most significant complaints. Eleven children died before the age of 4 years due to protein losing enteropathy (PLE), sepsis, or seizures. The oldest patient was a 40 year-old Dutch woman. The most common pathogenic protein alterations were p.A333V and p.I299Del, without any clear genotype-phenotype correlation. DISCUSSION: ALG6-CDG has been now described in 89 patients, making it the second most common type of CDG. It has a recognizable phenotype and a primary neurologic presentation.