Due to the spontaneous transport of small-sized cations and redox reactions under open circuit conditions, the currently reported coloring electrochromic devices (ECDs) may self-bleach easily. The resulting ECDs exhibit poor open-circuit memory, which limits their applications in static display advertisement. By constructing energy barriers to effectively control small-sized cation transport, the redox reaction could be suppressed, thereby inhibiting the self-bleaching of ECDs. In this study, phosphate glass is used as an electrolyte to construct high-energy barriers. Sodium ions in phosphate glass absorb external heat to cross energy barriers and become conductive charge carriers. In this case, the electrochromism of ECDs is allowed. On the contrary, after the absorbed heat energy is released, sodium ions are immediately trapped by oxygen ions in the PO4 unit, becoming frozen ions. At this point, the electrochromization of ECDs is prohibited. Based on the ionic conductive feature of phosphate glass, ECDs absorb heat and are colored by applying an electric field first. Then, ECDs release the thermal energy and the sodium ions transport in the electrolyte is blocked to cut off the self-bleaching pathway. The prepared inorganic all-solid-state ECDs maintained the colored state for several months using the method mentioned above, which solved the problem of the poor open-circuit memory of ECDs.
Molecular spintronic devices are gaining popularity because the organic semiconductors with long spin relaxation times are expected to have long spin diffusion lengths. A typical molecular spintronic device consists of organic molecules sandwiched between two magnetic layers, which exhibits magnetoresistance (MR) effect. Nanosized devices are also expected to have a high spin polarization, leading to a large MR effect owing to effective orbital hybridization. However, most studies on nanosized molecular spintronic devices have investigated the MR effect at low temperatures because of the difficulty in observing the MR effect at room temperature. Here we focus on high-mobility molecules expected to show long spin diffusion lengths, which lead to the observation of the MR effect in nanoscale junctions at room temperature. In this study, we fabricate magnetic nanojunctions consisting of high-mobility molecules, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), sandwiched between two Ni78Fe22 thin films with crossed edges. Transmission electron microscopy (TEM) images reveal that C8-BTBT molecular layers with smooth and clear interfaces can be deposited on the Ni78Fe22 thin-film edges. Consequently, we observe a clear positive MR effect, that is, R P < R AP, where R P and R AP are the resistances in the parallel (P) and antiparallel (AP) configurations, respectively, of two magnetic electrodes in the Ni78Fe22/C8-BTBT/Ni78Fe22 nanojunctions at room temperature. The obtained results indicate that the spin signal through the C8-BTBT molecules can be successfully observed. The study presented herein provides a novel nanofabrication technique and opens up new opportunities for research in high-mobility molecular nano-spintronics.
A synthetic protocol was developed for obtaining a single phase of polycrystalline NaAlB14 with strongly connected intergrain boundaries. NaAlB14 has a unique crystal structure with a tunnel-like covalent framework of B that traps monovalent Na and trivalent Al ions. Owing to the atmospheric instability and volatility of Na, the synthesis of polycrystalline NaAlB14 and its physical properties have not been reported yet. This study employed a two-step process to achieve single-phase polycrystalline NaAlB14. As a first step, a mixture of Al and B with excess Al was sintered in the Na vapor atmosphere followed by HCl treatment to remove excess Al as a second step. For obtaining bulk samples with strong grain connection, vacuum or high-pressure (HP) annealing was employed. HP annealing promoted bandgap shrinkage due to the crystal strain and defect levels and suppressed intergranular resistance. As a result, the HP-annealed sample achieved superior transport properties (0.1 kΩ cm at 300 K) to the vacuum-annealed sample (260 kΩ cm). Furthermore, from the viewpoint of its crystal structure and DFT calculations, the most probable site for the defect was suggested to be the Na site.
Na-free Si clathrates consisting only of Si cages are an allotrope of diamond-structured Si. This material is promising for various device applications, such as next-generation photovoltaics. The probable technique for synthesizing Na-free Si clathrates is to extract Na+ from the Si cages of Na24 Si136 . Vacuum annealing is presently a well-known conventional and effective approach for extracting Na. However, this study demonstrates that Na+ cannot be extracted from the surface of a single-crystalline type-II metallic Si clathrate (Na24 Si136 ) in areas deeper than 150 µm. Therefore, a novel method is developed to control anisotropic ion diffusion: this is effective for various compounds with a large difference in the bonding strength between their constituent elements, such as Na24 Si136 composed of covalent Si cages and weakly trapped Na+ . By skillfully exploiting the difference in the chemical potentials as a driving force, Na+ is homogeneously extracted regardless of the size of the single crystal while maintaining high crystallinity. Additionally, the proposed point defect model is evaluated via density functional theory, and the migration of Na+ between the Si cages is explained. It is expected that the developed experimental and computational techniques would significantly advance material design for synthesizing thermodynamically metastable materials.
Anhydrous silicophosphoric acid glass with an approximate composition of H5 Si2 P9 O29 was synthesized and its thermal and proton-conducting properties were characterized. Despite exhibiting a glass transition at 192 °C, the supercooled liquid could be handled as a solid up to 280 °C owing to its high viscosity. The glass and its melt exhibited proton conduction with a proton transport number of â¼1. Although covalent O-H bonds were weakened by relatively strong hydrogen bonding, the proton conductivity (4×10-4 â S cm-1 at 276 °C) was considerably lower than that of phosphoric acid. The high viscosity of the melt was due to the tight cross-linking of phosphate ion chains by six-fold-coordinated Si atoms. The low proton conductivity was attributed to the trapping of positively charged proton carriers around anionic SiO6 units (expressed as (SiO6/2 )2- ) to compensate for the negative charges.
Glass , Protons , Electric Conductivity , Glass/chemistry , Hydrogen Bonding
Mechanoresponsive diacetylenes (DAs) exhibiting a transition of crystalline orientation from light-inert to light-active state upon applied force are reported. Amide units are introduced to DAs where hydrogen bonding is utilized to control intermolecular interactions. Application of external pressure (2-150 MPa) to DAs results in an emergence of new crystal phases with changing the d-spacing which possibly reduces the reaction barrier. Accordingly, the dramatic crystalline transition from "perfectly off" to "on" state to undergo the light-induced topochemical polymerization of bulk DA crystals is obtained. Subsequent UV irradiation at a wavelength of 254 nm enables the polymerization of the pressed region, changing its color from white to blue which suggests the selective formation of polydiacetylene (PDA) polymorphs. In addition, by utilizing the mechanoresponsive crystallinity with low-enough activation pressure, a new strategy for PDA patterning is demonstrated based on the selective transfer of information by means of force to a DA film. This phenomenon can be applicable to a new nanoimprinting technique where no mechanical deformation of resist materials but phase transition is induced by the mold.
One of the most important achievements in the field of spintronics is the development of magnetic tunnel junctions (MTJs). MTJs exhibit a large tunneling magnetoresistance (TMR). However, TMR is strongly dependent on biasing voltage, generally, decreasing with applying bias. The rapid decay of TMR was a major deficiency of MTJs. Here we report a new phenomenon at room temperature, in which the tunneling magnetocapacitance (TMC) increases with biasing voltage in an MTJ system based on Co40Fe40B20/MgO/Co40Fe40B20. We have observed a maximum TMC value of 102% under appropriate biasing, which is the largest voltage-induced TMC effect ever reported for MTJs. We have found excellent agreement between theory and experiment for the bipolar biasing regions using Debye-Fröhlich model combined with quartic barrier approximation and spin-dependent drift-diffusion model. Based on our calculation, we predict that the voltage-induced TMC ratio could reach 1100% in MTJs with a corresponding TMR value of 604%. Our work has provided a new understanding on the voltage-induced AC spin-dependent transport in MTJs. The results reported here may open a novel pathway for spintronics applications, e.g., non-volatile memories and spin logic circuits.
The development of an unconventional synthesis method has a large potential to drastically advance materials science. In this research, a new synthesis method based on a solid-state electrochemical reaction was demonstrated, which can be made available for intercalation and ion substitution. It was referred to as proton-driven ion introduction (PDII). The protons generated by the electrolytic dissociation of hydrogen drive other monovalent cations along a high electric field in the solid state. Utilizing this mechanism, Li+, Na+, K+, Cu+, and Ag+ were intercalated into a layered TaS2 single crystal while maintaining high crystallinity. This liquid-free process of ion introduction allows the application of high voltage around several kilovolts to the sample. Such a high electric field strongly accelerates ion substitution. Actually, compared to conventional solid-state reaction, PDII introduced 15 times the amount of K into Na super ionic conductor (NASICON)-structured Na3-xKxV2(PO4)3. The obtained materials exhibited a thermodynamically metastable phase, which has not been reported so far. This concept and idea for ion introduction is expected to form new functional compounds and/or phases.
Magnetocapacitance (MC) effect, observed in a wide range of materials and devices, such as multiferroic materials and spintronic devices, has received considerable attention due to its interesting physical properties and practical applications. A normal MC effect exhibits a higher capacitance when spins in the electrodes are parallel to each other and a lower capacitance when spins are antiparallel. Here we report an inverse tunnel magnetocapacitance (TMC) effect for the first time in Fe/AlOx/Fe3O4 magnetic tunnel junctions (MTJs). The inverse TMC reaches up to 11.4% at room temperature and the robustness of spin polarization is revealed in the bias dependence of the inverse TMC. Excellent agreement between theory and experiment is achieved for the entire applied frequency range and the wide bipolar bias regions using Debye-Fröhlich model (combined with the Zhang formula and parabolic barrier approximation) and spin-dependent drift-diffusion model. Furthermore, our theoretical calculations predict that the inverse TMC effect could potentially reach 150% in MTJs with a positive and negative spin polarization of 65% and -42%, respectively. These theoretical and experimental findings provide a new insight into both static and dynamic spin-dependent transports. They will open up broader opportunities for device applications, such as magnetic logic circuits and multi-valued memory devices.
A novel superconductor, LaPt5As, which exhibits a new crystal structure was discovered by high-pressure synthesis using a Kawai-type apparatus. A superconducting transition temperature was observed at 2.6 K. Depending on the sintering pressure, LaPt5As has superconducting and non-superconducting phases with different crystal structures. A sintering pressure of around 10 GPa is effective to form single-phase superconducting LaPt5As. This material has a very unique crystal structure with an extremely long c lattice parameter of over 60 Å and corner-sharing tetrahedrons composed of network-like Pt layers. Density functional theory calculations have suggested that the superconducting current flows through these Pt layers. Also, this unique layered structure characteristic of LaPt5As is thought to play a key role in the emergence of superconductivity. Furthermore, due to a stacking structure which makes up layers, various structural modifications for the LaPt5As family are conceivable. Since such a high-pressure synthesis using a Kawai-type apparatus is not common in the field of materials science, there is large room for further exploration of unknown phases which are induced by high pressure in various materials.
