In the quest for thinner and more efficient ferroelectric devices, Hf0.5Zr0.5O2 (HZO) has emerged as a potential ultrathin and lead-free ferroelectric material. Indeed, when deposited on a TiN electrode, 1-25 nm thick HZO exhibits excellent ferroelectricity capability, allowing the prospective miniaturization of capacitors and transistor devices. To investigate the origin of ferroelectricity in HZO thin films, we conducted a far-infrared (FIR) spectroscopic study on 5 HZO films with thicknesses ranging from 10 to 52 nm, both within and out of the ferroelectric thickness range where ferroelectric properties are observed. Based on X-ray diffraction, these HZO films are estimated to contain various proportions of monoclinic (m-), tetragonal (t-), and polar orthorhombic (polar o-) phases, while only the 11, 17, and 21 nm thick are expected to include a higher amount of polar o-phase. We coupled the HZO infrared measurements with DFT simulations for these m-, t-, and polar o-crystallographic structures. The approach used was based on the supercell method, which combines all possible Hf/Zr mixed atomic sites in the solid solution. The excellent agreement between measured and simulated spectra allows assigning most bands and provides infrared signatures for the various HZO structures, including the polar orthorhombic form. Beyond pure assignment of bands, the DFT IR spectra averaging using a mix of different compositions (e.g., 70% polar o-phase +30% m-phase) of HZO DFT crystal phases allows quantification of the percentage of different structures inside the different HZO film thicknesses. Regarding the experimental data analysis, we used the spectroscopic data to perform a Kramers-Kronig constrained variational fit to extract the optical functions of the films using a Drude-Lorentz-based model. We found that the ferroelectric films could be described using a set of about 7 oscillators, which results in static dielectric constants in good agreement with theoretical values and previously reported ones for HfO2-doped ferroelectric films.
The growth of Ag clusters on amorphous carbon substrates is studied in situ by X-ray scattering experiments, whose final outcome is imaged by electron microscopy. The real-time analysis of the growth process at room temperature shows the formation of a large majority of icosahedral structures by a shell-by-shell growth mode which produces smooth and nearly defect-free structures. Molecular dynamics simulations supported by ab initio calculations reveal that the shell-by-shell mode is possible because of the occurrence of collective displacements which involve the concerted motion of many atoms of the growing shell. These collective processes are a kind of black swan event, as they occur suddenly and rarely, but their occurrence is decisive for the final outcome of the growth. Annealing and ageing experiments show that the as-grown icosahedra are metastable, in agreement with the energetic stability calculations.
Two-dimensional (2D) honeycomb lattices beyond graphene, such as germanene, appear very promising due to their outstanding electronic properties, such as the quantum spin Hall effects. While there have been many claims of germanene monolayers up to now, no experimental evidence of a honeycomb structure has been provided up to now for these grown monolayers. Using scanning tunneling microscopy (STM), surface X-ray diffraction (SXRD), and density functional theory, we have elucidated the Ge-induced (109×109)R±24.5° reconstruction on Ag(111). We demonstrate that a powerful algorithm combining SXRD with STM allows us to solve a giant surface reconstruction with more than a hundred atoms per unit cell. Its extensive unit cell indeed consists of 98 2-fold or 3-fold coordinated Ge atoms, forming a periodic arrangement of pentagons, hexagons, and heptagons, with the inclusion of six dispersed Ag atoms. By analogy, we show that the (77×77)R±19.1° reconstruction obtained by segregation of Ge through an epitaxial Ag/Ge(111) film possesses a similar structure, i.e., Ge pentagons/hexagons/heptagons with a few Ag atoms. Such an organization is more stable than that of pure Ge monolayers and can be assigned to the ground state of epitaxial germanene.
Steel is the most commonly manufactured material in the world. Its performances can be improved by hot-dip coating with the low weight aluminum metal. The structure of the Alâ¥Fe interface, which is known to contain a buffer layer made of complex intermetallic compounds such as Al5Fe2 and Al13Fe4, is crucial for the properties. On the basis of surface X-ray diffraction, combined with theoretical calculations, we derive in this work a consistent model at the atomic scale for the complex Al13Fe4(010)â¥Al5Fe2(001) interface. The epitaxial relationships are found to be [130]Al5Fe2â¥[010]Al13Fe4 and [1 1Ì 0]Al5Fe2 â¥[100]Al13Fe4. Interfacial and constrained energies, as well as works of adhesion, calculated for several structural models based on density functional theory, identify the lattice mismatch and the interfacial chemical composition as main factors for the stability of the interface. Molecular dynamics simulations suggest a mechanism of Al diffusion to explain the formation of the complex Al13Fe4 and Al5Fe2 phases at the Alâ¥Fe interface.
Ohmic or Schottky contacts in micro- and nanoelectronic devices are formed by metal-semiconductor bilayer systems, based on elemental metals or thermally more stable metallic compounds (germanides, silicides). The control of their electronic properties remains challenging as their structure formation is not yet fully understood. We have studied the phase and microstructure evolution during sputter deposition and postgrowth annealing of Pd/a-Ge bilayer systems with different Pd/Ge ratios (Pd:Ge, 2Pd:Ge, and 4Pd:Ge). The room-temperature deposition of up to 30 nm Pd was monitored by simultaneous, in situ synchrotron X-ray diffraction, X-ray reflectivity, and optical stress measurements. With this portfolio of complementary real-time methods, we could identify the microstructural origins of the resistivity evolution during contact formation: Real-time X-ray diffraction measurements indicate a coherent, epitaxial growth of Pd(111) on the individual crystallites of the initially forming, polycrystalline Pd2Ge[111] layer. The crystallization of the Pd2Ge interfacial layer causes a characteristic change in the real-time wafer curvature (tensile peak), and a significant drop of the resistivity after 1.5 nm Pd deposition. In addition, we could confirm the isostructural interface formation of Pd/a-Ge and Pd/a-Si. Subtle differences between both interfaces originate from the lattice mismatch at the interface between compound and metal. The solid-state reaction during subsequent annealing was studied by real-time X-ray diffraction and complementary UHV surface analysis. We could establish the link between phase and microstructure formation during deposition and annealing-induced solid-state reaction: The thermally induced reaction between Pd and a-Ge proceeds via diffusion-controlled growth of the Pd2Ge seed crystallites. The second-phase (PdGe) formation is nucleation-controlled and takes place only when a sufficient Ge reservoir exists. The real-time access to structure and electronic properties on the nanoscale opens new paths for the knowledge-based formation of ultrathin metal/semiconductor contacts.
The Ag/Co nanoalloy system is a model system situated energetically at the limit of stability of the core-shell chemical ordering with respect to a simple phase separation behavior. This makes the system highly susceptible to effects of the environment, such as interaction with a substrate. However, kinetic effects may also be exploited by careful atom-by-atom particle growth that allows to lock in certain out-of-equilibrium configurations, such as off-center, quasi-Janus and even Janus type particles. In this contribution, we explore to what extent out-of-equilibrium structures are due to kinetic effects and the influence of the interaction of the particles with an amorphous carbon substrate by a joint experimental and molecular dynamics study. The simulation set up performed at 300 K and 600 K mimicks the experimental growth process. The substrate deforms the particles, but has also an ordering effect on particle orientation and particle structure. In the case of growth of Ag on Co seeds, particles assume close to equilibrium quasi-Janus structures, while for the deposition of Co on Ag seeds, highly out-of-equilibrium structures with several subsurface Co clusters are obtained.
New collective optical properties have emerged recently from organized and oriented arrays of closely packed semiconducting and metallic nanoparticles (NPs). However, it is still challenging to obtain NP assemblies which are similar everywhere on a given sample and, most importantly, share a unique common orientation that would guarantee a unique behavior everywhere on the sample. In this context, by combining optical microscopy, fluorescence microscopy and synchrotron-based grazing incidence X-ray scattering (GISAXS) of assemblies of gold nanospheres and of fluorescent nanorods, we study the interactions between NPs and liquid crystal smectic topological defects that can ultimately lead to unique NP orientations. We demonstrate that arrays of one-dimensional - 1D (dislocations) and two-dimensional - 2D (grain boundaries) topological defects oriented along one single direction confine and organize NPs in closely packed networks but also orient both single nanorods and NP networks along the same direction. Through the comparison between smectic films associated with different kinds of topological defects, we highlight that the coupling between the NP ligands and the smectic layers below the grain boundaries may be necessary to allow for fixed NP orientation. This is in contrast with 1D defects, where the induced orientation of the NPs is intrinsically induced by the confinement independently of the ligand nature. We thus succeeded in achieving the fixed polarization of assemblies of single photon emitters in defects. For gold nanospheres confined in grain boundaries, a strict orientation of hexagonal networks has been obtained with the ã10ã direction strictly parallel to the defects. With such closely packed and oriented NPs, new collective properties are now foreseen.
The increasing interest in atomic layer deposition (ALD) of Pt for the controlled synthesis of supported nanoparticles for catalysis demands an in-depth understanding of the nucleation controlled growth behaviour. We present an in situ investigation of Pt ALD on planar Si substrates, with native SiO2, by means of X-ray fluorescence (XRF) and grazing incidence small-angle X-ray scattering (GISAXS), using a custom-built synchrotron-compatible high-vacuum ALD setup and focusing on the thermal Pt ALD process, comprising (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) and O2 gas at 300 °C. The evolution in key scattering features provides insights into the growth kinetics of Pt deposits from small nuclei to isolated islands and coalesced worm-like structures. An analysis approach is introduced to extract dynamic information on the average real space parameters, such as Pt cluster shape, size, and spacing. The results indicate a nucleation stage, followed by a diffusion-mediated particle growth regime that is marked by a decrease in average areal density and the formation of laterally elongated Pt clusters. Growth of the Pt nanoparticles is thus not only governed by the adsorption of Pt precursor molecules from the gas-phase and subsequent combustion of the ligands, but is largely determined by adsorption of migrating Pt species on the surface and diffusion-driven particle coalescence. Moreover, the influence of the Pt precursor dose on the particle nucleation and growth is investigated. It is found that the precursor dose influences the deposition rate (number of Pt atoms per cycle), while the particle morphology for a specific Pt loading is independent of the precursor dose used in the ALD process. Our results prove that combining in situ GISAXS and XRF provides an excellent experimental strategy to obtain new fundamental insights about the role of deposition parameters on the morphology of Pt ALD depositions. This knowledge is vital to improve control over the Pt nucleation stage and enable efficient synthesis of supported nanocatalysts.
An amendment to this paper has been published and can be accessed via a link at the top of the paper.
A few low-order approximants to decagonal quasicrystals have been shown to provide excellent activity and selectivity for the hydrogenation of alkenes and alkynes. It is the case for the Al13Co4 compound, for which the catalytic properties of the pseudo-2-fold orientation have been revealed to be among the best. A combination of surface science studies, including surface X-ray diffraction, and calculations based on density functional theory is used here to derive an atomistic model for the pseudo-2-fold o-Al13Co4 surface, whose faceted and columnar structure is found very similar to the one of the 2-fold surface of the d-Al-Ni-Co quasicrystal. Facets substantially stabilize the system, with energies in the range 1.19-1.31 J/m2, i.e., much smaller than the ones of the pseudo-10-fold (1.49-1.68 J/m2) and pseudo-2-fold (1.66 J/m2) surfaces. Faceting is also a main factor at the origin of the Al13Co4 catalytic performances, as illustrated by the comparison of the pseudo-10-fold, pseudo-2-fold and facet potential energy maps for hydrogen adsorption. This work gives insights toward the design of complex intermetallic catalysts through surface nanostructuration for optimized catalytic performances.
We explore the use of continuous scanning during data acquisition for Bragg coherent diffraction imaging, i.e., where the sample is in continuous motion. The fidelity of continuous scanning Bragg coherent diffraction imaging is demonstrated on a single Pt nanoparticle in a flow reactor at [Formula: see text] in an Ar-based gas flowed at 50 ml/min. We show a reduction of 30% in total scan time compared to conventional step-by-step scanning. The reconstructed Bragg electron density, phase, displacement and strain fields are in excellent agreement with the results obtained from conventional step-by-step scanning. Continuous scanning will allow to minimise sample instability under the beam and will become increasingly important at diffraction-limited storage ring light sources.
In this Letter, we show how advanced hierarchical structures of topological defects in the so-called smectic oily streaks can be used to sequentially transfer their geometrical features to gold nanospheres. We use two kinds of topological defects, 1D dislocations and 2D ribbon-like topological defects. The large trapping efficiency of the smectic dislocation cores not only surpasses that of the elastically distorted zones around the cores but also surpasses the one of the 2D ribbon-like topological defect. This enables the formation of a large number of aligned NP chains within the dislocation cores that can be quasi-fully filled without any significant aggregation outside of the cores. When the NP concentration is large enough to entirely fill the dislocation cores, the LC confinement varies from 1D to 2D. We demonstrate that the 2D topological defect cores induce a confinement that leads to planar hexagonal networks of NPs. We then draw the phase diagram driven by NP concentration, associated with the sequential confinements induced by these two kinds of topological defects. Owing to the excellent large-scale order of these defect cores, not only the NP chains but also the NP hexagonal networks can be oriented along the desired direction, suggesting a possible new route for the creation of either 1D or 2D highly anisotropic NP networks. In addition, these results open rich perspectives based on the possible creation of coexisting NP assemblies of different kinds, localized in different confining areas of a same smectic film that would thus interact thanks to their proximity but also would interact via the surrounding soft matter matrix.
Synchrotron experiments combining real-time stress, X-ray diffraction, and X-ray reflectivity measurements, complemented by in situ electron diffraction and photon electron spectroscopy measurements, revealed a detailed picture of the interfacial silicide formation during deposition of ultrathin Pd layers on amorphous silicon. Initially, an amorphous Pd2Si interlayer is formed. At a critical thickness of 2.3 nm, this layer crystallizes and the resulting volume reduction leads to a tensile stress buildup. The [111] textured Pd2Si layer continues to grow up to a thickness of ≈3.7 nm and is subsequently covered by a Pd layer with [111] texture. The tensile stress relaxes already during Pd2Si growth. A comparison between the texture formation on SiOx and a-Si shows that the silicide layer serves as a template for the Pd layer, resulting in a surprisingly narrow texture of only 3° after 800 s Pd deposition. The texture formation of Pd and Pd2Si can be explained by the low lattice mismatch between Pd(111) and Pd2Si(111). The combined experimental results indicate a similar interface formation mechanism for Pd on a-Si and c-Si, whereas the resulting silicide texture depends on the Si surface. A new strain relaxation mechanism via grain boundary diffusion is proposed, taking into account the influence of the thickness-dependent crystallization on the material transport through the silicide layer. In combination with the small lattice mismatch, the grain boundary diffusion facilitates the growth of Pd clusters, explaining thus the well-defined thickness of the interfacial silicide layer, which limits the miniaturization of self-organized silicide layers for microelectronic devices.
Spin-crossover molecules are very appealing for use in multifunctional spintronic devices because of their ability to switch between high-spin and low-spin states with external stimuli such as voltage and light. In actual devices, the molecules are deposited on a substrate, which can modify their properties. However, surprisingly little is known about such molecule-substrate effects. Here we show for the first time, by grazing incidence X-ray diffraction, that an FeII spin-crossover molecular layer displays a well-defined epitaxial relationship with a metal substrate. Then we show, by both density functional calculations and a mechanoelastic model, that the resulting epitaxial strain and the related internal pressure can induce a partial spin conversion at low temperatures, which has indeed been observed experimentally. Our results emphasize the importance of substrate-induced spin state transitions and raise the possibility of exploiting them.
Au-Cu bimetallic nanoparticles (NPs) grown on TiO2(110) have been followed in situ using grazing incidence X-ray diffraction and X-ray photoemission spectroscopy from their synthesis to their exposure to a CO/O2 mixture at low pressure (P < 10-5 mbar) and at different temperatures (300 K-470 K). As-prepared samples are composed of two types of alloyed NPs: randomly oriented and epitaxial NPs. Whereas the introduction of CO has no effect on the structure of the NPs, an O2 introduction triggers a Cu surface segregation phenomenon resulting in the formation of a Cu2O shell reducible by annealing the sample over 430 K. A selective re-orientation of the nanoparticles, induced by the exposure to a CO/O2 mixture, is observed where the randomly oriented NPs take advantage of the mobility induced by the Cu segregation to re-orient their Au-rich core relatively to the TiO2(110) substrate following specifically the orientation ((111)NPs//(110)TiO2) when others epitaxial relationships were observed on the as-prepared sample.
Producing a usable semiconducting form of graphene has plagued the development of graphene electronics for nearly two decades. Now that new preparation methods have become available, graphene's intrinsic properties can be measured and the search for semiconducting graphene has begun to produce results. This is the case of the first graphene "buffer" layer grown on SiC(0001) presented in this work. We show, contrary to assumptions of the last 40 years, that the buffer graphene layer is not commensurate with SiC. The new modulated structure we've found resolves a long-standing contradiction where ab initio calculations expect a metallic buffer, while experimentally it is found to be a semiconductor. Model calculations using the new incommensurate structure show that the semiconducting π-band character of the buffer comes from partially hybridized graphene incommensurate boundaries surrounding unperturbed graphene islands.
We report the design of a mobile setup for synchrotron based in situ studies during atomic layer processing. The system was designed to facilitate in situ grazing incidence small angle x-ray scattering (GISAXS), x-ray fluorescence (XRF), and x-ray absorption spectroscopy measurements at synchrotron facilities. The setup consists of a compact high vacuum pump-type reactor for atomic layer deposition (ALD). The presence of a remote radio frequency plasma source enables in situ experiments during both thermal as well as plasma-enhanced ALD. The system has been successfully installed at different beam line end stations at the European Synchrotron Radiation Facility and SOLEIL synchrotrons. Examples are discussed of in situ GISAXS and XRF measurements during thermal and plasma-enhanced ALD growth of ruthenium from RuO4 (ToRuS™, Air Liquide) and H2 or H2 plasma, providing insights in the nucleation behavior of these processes.
Combining optical microscopy, synchrotron X-ray diffraction and ellipsometry, we studied the internal structure of linear defect domains (oily streaks) in films of a smectic liquid crystal 8CB with thicknesses in the range of 100-300 nm. These films are confined between air and a rubbed PVA polymer substrate which imposes hybrid anchoring conditions (normal and unidirectional planar, respectively). We show how the presence or absence of dislocations controls the structure of highly deformed thin smectic films. Each domain contains smectic layers curved in the shape of flattened hemicylinders to satisfy both anchoring conditions, together with grain boundaries whose size and shape are controlled by the presence of dislocation lines. A flat grain boundary normal to the interface connects neighboring hemicylinders, while a rotating grain boundary (RGB) is located near the axis of curvature of the cylinders. The RGB shape appears such that dislocation lines are concentrated at its summit close to the air interface. The smectic layers reach the polymer substrate via a transition region where the smectic layer orientation satisfies the planar anchoring conditions over the entire polymer substrate and whose thickness does not depend on that of the film. The strength of planar anchoring appears to be high, larger than 10(-2) mJ m(-2), compensating for the high energy cost of creating an additional 2D defect between a horizontal smectic layer and perpendicular ones of the transition region. This 2D defect may be melted, in order to avoid the creation of a transition region structure composed of a large number of dislocations. As a result, linear defect domains can be considered as arrays of oriented defects, straight dislocations of various Burger vectors, whose location is now known, and 2D nematic defects. The possibility of easy variation between the present structure with a moderate amount of dislocations and a structure with a large number of dislocations is also demonstrated.
Biphenyl Compounds/chemistry , Liquid Crystals/chemistry , Liquid Crystals/ultrastructure , Nitriles/chemistry , Computer Simulation , Models, Chemical , Phase Transition , Polyvinyl Alcohol/chemistry , X-Ray Diffraction
We investigated composite films of gold nanoparticles (NPs)/liquid crystal (LC) defects as a model system to understand the key parameters, which allow for an accurate control of NP anisotropic self-assemblies using soft templates. We combined spectrophotometry, Raman spectroscopy, and grazing incidence small-angle X-ray scattering with calculations of dipole coupling models and soft sphere interactions. We demonstrate that dense arrays of elementary edge dislocations can strongly localize small NPs along the defect cores, resulting in formation of parallel chains of NPs. Furthermore, we show that within the dislocation cores the inter-NP distances can be tuned. This phenomenon appears to be driven by the competition between "soft (nano)sphere" attraction and LC-induced repulsion. We evidence two extreme regimes controlled by the solvent evaporation: (i) when the solvent evaporates abruptly, the spacing between neighboring NPs in the chains is dominated by van der Waals interactions between interdigitated capping ligands, leading to chains of close-packed NPs; (ii) when the solvent evaporates slowly, strong interdigitation between the is avoided, leading to a dominating LC-induced repulsion between NPs associated with the replacement of disordered cores by NPs. The templating of NPs by topological defects, beyond the technological inquiries, may enable creation, investigation, and manipulation of unique collective features for a wide range of nanomaterials.
