Hybrid inorganic-organic perovskites with chiral response and outstanding optoelectronic characteristics are promising materials for next-generation spin-optoelectronics. In particular, two-dimensional (2D) perovskites are promising chiroptical candidates due to their unique ability to incorporate chiral organic cations into their crystal structure, which imparts chirality. To enable their practical applications in chiral optoelectronic devices, it is essential to achieve an anisotropy factor (gCD â¼ 2) in chiral 2D perovskites. Currently, chiral 2D perovskites exhibit a relatively low gCD of 3.1 × 10-3. Several approaches have been explored to improve the chiral response of chiral 2D perovskites, including tailoring the molecular structure of chiral cations and increasing the degree of octahedral tilting in the perovskite lattice. However, current methods for chiral amplification have only achieved a moderate enhancement of gCD by 2-fold and are often accompanied by undesirable shifts or inversion in the circular dichroism spectra. There is a need for a more efficient approach to enhancing the chirality in 2D perovskites. Here, we report an innovative coassembly process that allows us to seamlessly grow chiral 2D perovskites on supramolecular helical structures. We discover that the interactions between perovskites and chiral supramolecular structures promote crystal lattice distortion in perovskites, which improves the chirality of 2D perovskites. Additionally, the obtained hierarchical coassembly can effectively harness the structural chirality of the supramolecular helices. The multilevel chiral enhancement leads to an enhancement in gCD by 2.7-fold without compromising the circular dichroism spectra of 2D perovskites.
Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative efforts, scientific breakthroughs can be made sooner and capitalized for the betterment of humanity.
Wearable Electronic Devices , Humans , Quality of Life
Light-emitting diodes (LEDs) in a tandem configuration offer a strategy to realize high-performance, multicolor devices. Until now, though, the efficiency of tandem colloidal quantum dot LEDs (QLEDs) has been limited due to unpassivated interfaces and solvent damage originating from the materials processing requirements of interconnecting layers (ICLs). Here an ICL is reported consisting of a semiconductor-metal-dielectric stack that provides facile fabrication, materials stability, and good optoelectronic coupling. It is investigated experimentally how the ICL enables charge balance, suppresses current leakage, and prevents solvent damage to the underlying layers. As a result record efficiencies are reported for double-junction tandem QLEDs, whose emission wavelengths cover from blue to red light; i.e., external quantum efficiencies (EQEs) of 40% (average 37+/-2%) for red, 49% (average 45+/-2%) for yellow, 50% (average 46+/-2%) for green, and 24% (average 21+/-2%) for blue are achieved.
Skin-like intrinsically stretchable soft electronic devices are essential to realize next-generation remote and preventative medicine for advanced personal healthcare1-4. The recent development of intrinsically stretchable conductors and semiconductors has enabled highly mechanically robust and skin-conformable electronic circuits or optoelectronic devices2,5-10. However, their operating frequencies have been limited to less than 100 hertz, which is much lower than that required for many applications. Here we report intrinsically stretchable diodes-based on stretchable organic and nanomaterials-capable of operating at a frequency as high as 13.56 megahertz. This operating frequency is high enough for the wireless operation of soft sensors and electrochromic display pixels using radiofrequency identification in which the base-carrier frequency is 6.78 megahertz or 13.56 megahertz. This was achieved through a combination of rational material design and device engineering. Specifically, we developed a stretchable anode, cathode, semiconductor and current collector that can satisfy the strict requirements for high-frequency operation. Finally, we show the operational feasibility of our diode by integrating it with a stretchable sensor, electrochromic display pixel and antenna to realize a stretchable wireless tag. This work is an important step towards enabling enhanced functionalities and capabilities for skin-like wearable electronics.
Electrodes , Polymers/chemistry , Wearable Electronic Devices , Electronics/instrumentation , Humans , Nanowires/chemistry , Semiconductors , Silver/chemistry , Skin , Wireless Technology/instrumentation
Interest has been growing in defects of halide perovskites in view of their intimate connection with key material optoelectronic properties. In perovskite quantum dots (PQDs), the influence of defects is even more apparent than in their bulk counterparts. By combining experiment and theory, we report herein a halide-vacancy-driven, ligand-directed self-assembly process of CsPbBr3 PQDs. With the assistance of oleic acid and didodecyldimethylammonium sulfide, surface-Br-vacancy-rich CsPbBr3 PQDs self-assemble into nanowires (NWs) that are 20-60â nm in width and several millimeters in length. The NWs exhibit a sharp photoluminescence profile (≈18â nm full-width at-half-maximum) that peaks at 525â nm. Our findings provide insight into the defect-correlated dynamics of PQDs and defect-assisted fabrication of perovskite materials and devices.
The remarkable properties of metal halide perovskites arising from their impressive charge carrier diffusion lengths have led to rapid advances in solution-processed optoelectronics. Unfortunately, diffusion lengths reported in perovskite single crystals have ranged widely - from 3 µm to 3 mm - for ostensibly similar materials. Here we report a contactless method to measure the carrier mobility and further extract the diffusion length: our approach avoids both the effects of contact resistance and those of high electric field. We vary the density of quenchers - epitaxially included within perovskite single crystals - and report the dependence of excited state lifetime in the perovskite on inter-quencher spacing. Our results are repeatable and self-consistent (i.e. they agree on diffusion length for many different quencher concentrations) to within ± 6%. Using this method, we obtain a diffusion length in metal-halide perovskites of 2.6 µm ± 0.1 µm.
Organic-inorganic hybrid perovskite solar cells (PSCs) have seen a rapid rise in power conversion efficiencies in recent years; however, they still suffer from interfacial recombination and charge extraction losses at interfaces between the perovskite absorber and the charge-transport layers. Here, in situ back-contact passivation (BCP) that reduces interfacial and extraction losses between the perovskite absorber and the hole transport layer (HTL) is reported. A thin layer of nondoped semiconducting polymer at the perovskite/HTL interface is introduced and it is shown that the use of the semiconductor polymer permits-in contrast with previously studied insulator-based passivants-the use of a relatively thick passivating layer. It is shown that a flat-band alignment between the perovskite and polymer passivation layers achieves a high photovoltage and fill factor: the resultant BCP enables a photovoltage of 1.15 V and a fill factor of 83% in 1.53 eV bandgap PSCs, leading to an efficiency of 21.6% in planar solar cells.
Metal halide perovskite materials are an emerging class of solution-processable semiconductors with considerable potential for use in optoelectronic devices1-3. For example, light-emitting diodes (LEDs) based on these materials could see application in flat-panel displays and solid-state lighting, owing to their potential to be made at low cost via facile solution processing, and could provide tunable colours and narrow emission line widths at high photoluminescence quantum yields4-8. However, the highest reported external quantum efficiencies of green- and red-light-emitting perovskite LEDs are around 14 per cent7,9 and 12 per cent8, respectively-still well behind the performance of organic LEDs10-12 and inorganic quantum dot LEDs13. Here we describe visible-light-emitting perovskite LEDs that surpass the quantum efficiency milestone of 20 per cent. This achievement stems from a new strategy for managing the compositional distribution in the device-an approach that simultaneously provides high luminescence and balanced charge injection. Specifically, we mixed a presynthesized CsPbBr3 perovskite with a MABr additive (where MA is CH3NH3), the differing solubilities of which yield sequential crystallization into a CsPbBr3/MABr quasi-core/shell structure. The MABr shell passivates the nonradiative defects that would otherwise be present in CsPbBr3 crystals, boosting the photoluminescence quantum efficiency, while the MABr capping layer enables balanced charge injection. The resulting 20.3 per cent external quantum efficiency represents a substantial step towards the practical application of perovskite LEDs in lighting and display.
Perovskite light-emitting diodes (PeLEDs) have shown excellent performance in the green and near-infrared spectral regions, with high color purity, efficiency, and brightness. In order to shift the emission wavelength to the blue, compositional engineering (anion mixing) and quantum-confinement engineering (reduced-dimensionality) have been employed. Unfortunately, LED emission profiles shift with increasing driving voltages due to either phase separation or the coexistence of multiple crystal domains. Here we report color-stable sky-blue PeLEDs achieved by enhancing the phase monodispersity of quasi-2D perovskite thin films. We selected cation combinations that modulate the crystallization and layer thickness distribution of the domains. The perovskite films show a record photoluminescence quantum yield of 88% at 477 nm. The corresponding PeLEDs exhibit stable sky-blue emission under high operation voltages. A maximum luminance of 2480 cd m-2 at 490 nm is achieved, fully one order of magnitude higher than the previous record for quasi-2D blue PeLEDs.
Low-dimensional perovskites have-in view of their high radiative recombination rates-shown great promise in achieving high luminescence brightness and colour saturation. Here we investigate the effect of electron-phonon interactions on the luminescence of single crystals of two-dimensional perovskites, showing that reducing these interactions can lead to bright blue emission in two-dimensional perovskites. Resonance Raman spectra and deformation potential analysis show that strong electron-phonon interactions result in fast non-radiative decay, and that this lowers the photoluminescence quantum yield (PLQY). Neutron scattering, solid-state NMR measurements of spin-lattice relaxation, density functional theory simulations and experimental atomic displacement measurements reveal that molecular motion is slowest, and rigidity greatest, in the brightest emitter. By varying the molecular configuration of the ligands, we show that a PLQY up to 79% and linewidth of 20 nm can be reached by controlling crystal rigidity and electron-phonon interactions. Designing crystal structures with electron-phonon interactions in mind offers a previously underexplored avenue to improve optoelectronic materials' performance.
Formamidinium-lead-iodide (FAPbI3)-based perovskites with bandgap below 1.55 eV are of interest for photovoltaics in view of their close-to-ideal bandgap. Record-performance FAPbI3-based solar cells have relied on fabrication via the sequential-deposition method; however, these devices exhibit unstable output under illumination due to the difficulty of incorporating cesium cations (stabilizer) in sequentially deposited films. Here we devise a perovskite seeding method that efficiently incorporates cesium and beneficially modulates perovskite crystallization. First, perovskite seed crystals are embedded in the PbI2 film. The perovskite seeds serve as cesium sources and act as nuclei to facilitate crystallization during the formation of perovskite. Perovskite films with perovskite seeding growth exhibit a lowered trap density, and the resulting planar solar cells achieve stabilized efficiency of 21.5% with a high open-circuit voltage of 1.13 V and a fill factor that exceeds 80%. The Cs-containing FAPbI3-based devices show a striking improvement in operational stability and retain 60% of their initial efficiency after 140 h operation under one sun illumination.
Quantum dot and well architectures are attractive for infrared optoelectronics, and have led to the realization of compelling light sensors. However, they require well-defined passivated interfaces and rapid charge transport, and this has restricted their efficient implementation to costly vacuum-epitaxially grown semiconductors. Here we report solution-processed, sensitive infrared field-emission photodetectors. Using quantum-dots-in-perovskite, we demonstrate the extraction of photocarriers via field emission, followed by the recirculation of photogenerated carriers. We use in operando ultrafast transient spectroscopy to sense bias-dependent photoemission and recapture in field-emission devices. The resultant photodiodes exploit the superior electronic transport properties of organometal halide perovskites, the quantum-size-tuned absorption of the colloidal quantum dots and their matched interface. These field-emission quantum-dot-in-perovskite photodiodes extend the perovskite response into the short-wavelength infrared and achieve measured specific detectivities that exceed 1012 Jones. The results pave the way towards novel functional photonic devices with applications in photovoltaics and light emission.
A crosslinked hole-extracting electrical contact is reported, which simultaneously improves the stability and lowers the hysteresis of perovskite solar cells. Polymerizable monomers and crosslinking processes are developed to obviate in situ degradation of the under lying perovskite. The crosslinked material is band-aligned with perovskite. The required free carrier density is induced by a high-work-function metal oxide layer atop the device, following a remote-doping strategy.
Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.
Solution-processed quantum dots are a promising material for large-scale, low-cost solar cell applications. New device architectures and improved passivation have been instrumental in increasing the performance of quantum dot photovoltaic devices. Here we report photovoltaic devices based on inks of quantum dot on which we grow thin perovskite shells in solid-state films. Passivation using the perovskite was achieved using a facile solution ligand exchange followed by postannealing. The resulting hybrid nanostructure created a more intrinsic CQD film, which, when incorporated into a photovoltaic device with graded bandstructure, achieved a record solar cell performance for single-step-deposited CQD films, exhibiting an AM1.5 solar power conversion efficiency of 8.95%.
Heteroepitaxy-atomically aligned growth of a crystalline film atop a different crystalline substrate-is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned 'dots-in-a-matrix' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.
Monodispersed manganese oxide (Mn1-xCox)3O4 (0 ≤ x ≤ 0.5) nanoparticles, less than 10 nm size, are respectively synthesized via a facile thermolysis method at a rather low temperature, ranging from 90 to 100 °C, without any inertia gas for protection. The influences of the Co dopant content on the critical reaction temperature required for the nanoparticle formation, electronic band structures, magnetic properties, and the microwave absorption capability of (Mn1-xCox)3O4 are comprehensively investigated by means of both experimental and theoretical approaches including powder X-ray diffraction (XRD), electron energy loss spectroscopy (EELS), super conductivity quantum interference device (SQUID) examination, and first-principle simulations. Co is successfully doped into the Mn atomic sites of the (Mn1-xCox)3O4 lattice, which is further confirmed by EELS data acquired from one individual nanoparticle. Therefore, continuous solid solutions of well-crystallized (Mn1-xCox)3O4 products are achieved without any impurity phase or phase separation. With increases in the Co dopant concentration x from 0 to 0.5, the lattice parameters change systemically, where the overall saturation magnetization at 30 K increases due to the more intense coupling of the 3d electrons between Mn and Co, as revealed by simulations. The microwave absorption properties of the (Mn1-xCox)3O4 nanoparticles are examined between 2 and 18 GHz. The maximum absorption peak -11.0 dB of the x = 0 sample is enhanced to -11.5 dB for x = 0.2, -12.7 dB for x = 0.25, -15.6 dB for x = 0.33, and -24.0 dB for x = 0.5 respectively, suggesting the Co doping effects. Our results might provide novel insights into the understanding of the influences of metallic ion doping on the electromagnetic properties of metallic oxide nanomaterials.
