The Effect of Ca Dopant on the Electrical and Dielectric Properties of BaTi4O9 Sintered Ceramics.

The current research examines the impact of Ca2+ substitution on the phase and electrical properties of (Ba1-xCax)Ti4O9, (x = 0.0, 0.3, 0.6, and 0.9) sintered pellets synthesized by solid-state reaction method. The as-synthesized samples were analyzed using X-ray diffraction (XRD) and impedance spectroscopy. The emergence of orthorhombic phase fit into space group Pnmm was revealed by XRD, and the addition of Ca resulted in a considerable shift in grain size. Dielectric properties were determined using an impedance spectroscopy in a wide frequency range from 1MHz to 3 GHz. The dielectric properties i.e., dielectric constant (εr) and dielectric loss (tanσ), were measured at 3 GHz frequency. The frequency-dependent parameters such as conductivity, dielectric constant, and dielectric loss indicated that the relaxation process is a Maxwell-Wagner type of interfacial polarization. The improved dielectric properties and low energy loss have made (Ba1-xCax)Ti4O9 a prominent energy storage material. This study provides the possibility to improve its dielectric properties and reduce energy loss, making it an excellent energy storage material.

Large Tunable Spin-to-Charge Conversion Induced by Hybrid Rashba and Dirac Surface States in Topological Insulator Heterostructures.

Topological insulators (TIs) have emerged as some of the most efficient spin-to-charge convertors because of their correlated spin-momentum locking at helical Dirac surface states. While endeavors have been made to pursue large "charge-to-spin" conversions in novel TI materials using spin-torque-transfer geometries, the reciprocal process "spin-to-charge" conversion, characterized by the inverse Edelstein effect length (λIEE) in the prototypical TI material (Bi2Se3), remains moderate. Here, we demonstrate that, by incorporating a "second" spin-splitting band, namely, a Rashba interface formed by inserting a bismuth interlayer between the ferromagnet and the Bi2Se3 (i.e., ferromagnet/Bi/Bi2Se3 heterostructure), λIEE shows a pronounced increase (up to 280 pm) compared with that in pure TIs. We found that λIEE alters as a function of bismuth interlayer thickness, suggesting a new degree of freedom to manipulate λIEE by engineering the interplay of Rashba and Dirac surface states. Our finding launches a new route for designing TI- and Rashba-type quantum materials for next-generation spintronic applications.