RESUMEN
Horizontal wells have significant advantages in coal bed methane exploration and development blocks. However, its application in new exploration and development blocks could be challenging. Limited geological data, uncertain geological conditions, and the emergence of micro-faults in pre-drilled target coal seams make it hard to accurately control the well trajectory. The well trajectory prior to drilling needs to be optimized to ensure that the drilling trajectory is within the target coal seam and to prevent any reduction in drilling ratio (defined here as the percentage of the drilling trajectory in the entire horizontal section of the well located in the target coal seam) caused by faults. In this study, the well trajectory optimization is achieved by implementing the following process to drill pilot hole, acquire 2D resonance, and azimuthal gamma logging while drilling. The pilot hole drilling can obtain the characteristic parameters of the target coal seam and the top and bottom rock layers in advance, which can provide judgment values for the landing site design and real-time monitoring of whether the wellbore trajectory extends along the target coal seam; 2D resonance exploration can obtain the construction of set orientation before drilling and the development of small faults and formation fluctuations in the horizontal section, which can optimize the well trajectory in advance; the azimuth gamma logging while drilling technology can monitor the layers drilled by the current drill bit in real time, and can provide timely and accurate well trajectory adjustment methods.The horizontal well-Q in the Block-W of the Qinshui Basin was taken as a case study and underwent technical mechanism research and applicability analysis. The implementation of this new innovative process resulted in a successful drilling of a 711 m horizontal section, with a target coal seam drilling rate of 80%. Compared to previous L-type wells, the drilling rate increased by about 20%, and the drilling cycle shortened by 25%. The technical experience gained from this successful case provides valuable insight for low-cost exploration and development of new coalbed methane blocks.
RESUMEN
InGaZnO (IGZO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in flat panel displays. However, the compromised transport performance and bias stress instability are critical issues inhibiting its application in ultrahigh-resolution optoelectronic displays. Here, we report the fabrication of graded channel junctionless IGZO:O|N TFTs with both high transporting properties and good bias stress stability by systematic manipulation of oxygen vacancy (VO) defects through sequential O antidoping and O/N codoping of the continuous IGZO framework. The transporting properties and bias stress stability of the graded channel IGZO:O|N TFTs, which exhibited high field-effect mobilities close to 100 cm2 V-1 s-1, negligible performance degradations, and trivial threshold voltage shifts against gate bias stress and photobias stress, are simultaneously improved compared to those of the controlled single-channel uniformly doped IGZO:O TFTs, IGZO:N TFTs, and double-channel barrier-confined IGZO:O/IGZO:N TFTs. The synergistic improvements are attributed to the sequential mobility and stability enhancement effects of O antidoping and O/N codoping where triple saturation currents are induced by O antidoping of the front-channel regime while the trapped electrons and photoexcited holes in the back-channel bulk and surface regions are suppressed by O/N codoping. More importantly, fast accumulation and barrier-free full depletion are rationally realized by eliminating the junction interface within the graded channel layer. Our observation identifies that graded channel doping could be a powerful way to synergistically boost up the transport performance and bias stress stability of oxide TFTs for new-generation ultrahigh-definition display applications.