Polycrystalline [Formula: see text] [Formula: see text] [Formula: see text] samples were synthesized by arc-melting and subsequent annealing at 970 K. Specific heat, electrical resistivity and magnetic susceptibility measurements are performed over a wide range in temperature and provide hints for the presence of a complex magnetic ordering below 3 K arising from three crystallographically independent Ce sites. This behaviour is driven by a complex interplay between ferro-, ferri-, and antiferromagnetic correlations among the Ce atoms.
Threading dislocations (TDs) of molecular beam epitaxy grown GaN film were studied with ultrahigh vacuum ballistic electron emission microscopy in order to quantify any fixed negative charge at identifiable TDs, with approximately 3 nm spatial and approximately 10 meV local barrier resolution. In contrast to several prior studies, we find no indication of fixed negative dislocation charge at specific TD structures, with a conservative upper limit of approximately 0.25 e(-) per c-axis unit cell. We do observe evidence of positive surface charge at TDs and at GaN step edges, which may be due to local piezoelectric fields.
