The ability of NaCl-type binary transition metal nitrides (incorporating La, Ce, Y, Zr or Hf) to act as catalytic supports facilitating ammonia decomposition was examined. The effect of nitrogen vacancies formed on nitrides can be understood in terms of the ionic radii of the metal cations. A clear correlation between the N2 desorption temperature and catalytic activity was found.
Amorphous oxide semiconductors (AOSs) with low off-currents and processing temperatures offer promising alternative materials for next-generation high-density memory devices. The complex vertical stacking process of memory devices significantly increases the probability of encountering internal contact issues. Conventional surface treatment methods developed for planar devices necessitate efficient approaches to eliminate contact issues at deep internal interfaces in the nanoscale complex structures of AOS devices. In this work, we report the pioneering use of palladium thin film as a high-efficiency active hydrogen transfer pathway from the outside to the internal contact interface via low-temperature postannealing in the H2 atmosphere, and the formation of highly conductive metallic interlayer effectively solves the contact issues at the deeply buried interfaces in devices. The application of this method reduced the contact resistance of Pd electrodes/amorphous indium-gallium-zinc oxide (a-IGZO) thin-film by 2 orders of magnitude, and thereby the mobility of thin-film transistor was increased from 3.2 cm2 V-1 s-1 to nearly 20 cm2 V-1 s-1, preserving an excellent bias stress stability. This technology has wide applicability for the solution of contact resistance issues in oxide semiconductor devices with complex architectures.
The water (H2 O) dissociation is critical for various H2 O-associated reactions, including water gas shift, hydrogen evolution reaction and hydrolysis corrosion. While the d-band center concept offers a catalyst design guideline for H2 O activation, it cannot be applied to intermetallic or main group elements-based systems because Coulomb interaction was not considered. Herein, using hydrolysis corrosion of Mg as an example, we illustrate the critical role of the dipole of the intermetallic catalysts for H2 O dissociation. The H2 O dissociation kinetics can be enhanced using Mgx Mey (Me=Co, Ni, Cu, Si and Al) as catalysts, and the hydrogen generation rate of Mg2 Ni-loaded Mg reached 80â times as high as Ni-loaded Mg. The adsorbed H2 O molecules strongly couple with the Mg-Me dipole of Mgx Mey , lowering the H2 O dissociation barrier. The dipole-based H2 O dissociation mechanism is applicable to non-transition metal-based systems, such as Mg2 Si and Mg17 Al12 , offering a flexible catalyst design strategy for controllable H2 O dissociation.
It has been well-established that light-matter interactions, as manifested by diverse linear and nonlinear optical (NLO) processes, are mediated by real and virtual particles, such as electrons, phonons, and excitons. Polarons, often regarded as electrons dressed by phonons, are known to contribute to exotic behaviors of solids, from superconductivity to photocatalysis, while their role in materials' NLO response remains largely unexplored. Here, the NLO response mediated by polarons supported by a model ionic metal oxide, TiO2, is examined. It is observed that the formation of polaronic states within the bandgap results in a dramatic enhancement of NLO absorption coefficient by over 130 times for photon energies in the sub-bandgap regions, characterized by a 100 fs scale ultrafast response that is typical for thermalized electrons in metals. The ultrafast polaronic NLO response is then exploited for the development of all-optical switches for ultrafast pulse generation in near-infrared (NIR) fiber lasers and modulation of optical signal in the telecommunication band based on evanescent interaction on a planar waveguide chip. These results suggest that the polarons supported by dielectric ionic oxides can fill the gaps left by dielectric and metallic materials and serve as a novel platform for nonlinear photonic applications.
High energy-conversion efficiency (ZT) of thermoelectric materials has been achieved in heavy metal chalcogenides, but the use of toxic Pb or Te is an obstacle for wide applications of thermoelectricity. Here, high ZT is demonstrated in toxic-element free Ba3 BO (B = Si and Ge) with inverse-perovskite structure. The negatively charged B ion contributes to hole transport with long carrier life time, and their highly dispersive bands with multiple valley degeneracy realize both high p-type electronic conductivity and high Seebeck coefficient, resulting in high power factor (PF). In addition, extremely low lattice thermal conductivities (κlat ) 1.0-0.4 W m-1 K-1 at T = 300-600 K are observed in Ba3 BO. Highly distorted O-Ba6 octahedral framework with weak ionic bonds between Ba with large mass and O provides low phonon velocities and strong phonon scattering in Ba3 BO. As a consequence of high PF and low κlat , Ba3 SiO (Ba3 GeO) exhibits rather high ZT = 0.16-0.84 (0.35-0.65) at T = 300-623 K (300-523 K). Finally, based on first-principles carrier and phonon transport calculations, maximum ZT is predicted to be 2.14 for Ba3 SiO and 1.21 for Ba3 GeO at T = 600 K by optimizing hole concentration. Present results propose that inverse-perovskites would be a new platform of environmentally-benign high-ZT thermoelectric materials.
In this Editorial, Guest Editors Douglasâ R. MacFarlane, Egill Skúlason, Hideo Hosono and Minhua Shao discuss the newly emerging field of electrochemical nitrogen reduction reaction (NRR) in the Special Issue of ChemSusChem on Sustainable Ammonia Synthesis.
The base strength of oxide catalysts is controlled by the electron charge distribution between cations and anions, with unsaturated oxygen ions that have lone pair electrons typically acting as basic sites. Substitution of oxide ions with anions that have different valences, such as nitride and hydride ions, can often generate basic sites. It is plausible that electrons trapped at oxygen vacancy sites could provide increased electron density and shift the highest occupied molecular orbital energy levels of anions upward in the case that the oxygen vacancies couple with surface-substituted anions. The present work demonstrates that high catalytic basicity can be obtained via site-selective doping of anions at face-sharing Ti2O9 dimer sites with oxygen vacancies in BaTiO3-x. This improved basicity stems from the coupling of substituted nitride ions to electrons at oxygen vacancies. The oxynitride BaTiO3-xNy was found to contain nitride ions that have increased electronic charge density on the basis of such interactions. Enhanced surface basicity following doping with nitride ion was also confirmed by CO2 temperature-programmed desorption and infrared spectroscopy in conjunction with the adsorption of CHCl3. The strong Lewis base sites resulting from the formation of the oxynitride evidently facilitated the catalytic activation of C-H bonds to promote Knoevenagel condensation reactions between aldehydes and active methylene compounds with pKa values of up to 28.9.
Invited for this Issue's cover is the group of Professor Hideo Hosono at Tokyo Institute of Technology. The Cover image explores the question which activation dominates N2 activation for ammonia synthesis. The Research Article itself is available at 10.1002/cssc.202300551.
N2 activation is a key step in the industrial synthesis of ammonia and other high-value-added N-containing chemicals, and typically is heavily reliant on transition metal (TM) sites as active centers to reduce the large activation energy barrier for N2 dissociation. In the present work, we report that a 2D electride of Ba2N with anionic electrons in the interlayer spacings works efficiently for TM-free N2 dissociation under mild conditions. The interlayer electrons significantly boost N2 dissociation with a very small activation energy of 35 kJ mol-1, as confirmed by the N2 isotopic exchange reaction. The reaction of anionic electrons with N2 molecules stabilizes (N2)2- anions, the so-called diazenide, in the large interlayer space (â¼4.5 Å) sandwiched by 2 cationic slabs of Ba2N as the main intermediate.
The tunability of reaction pathways is required for exploring efficient and low cost catalysts for ammonia synthesis. There is an obstacle by the limitations arising from scaling relation for this purpose. Here, we demonstrate that the alkali earth imides (AeNH) combined with transition metal (TM = Fe, Co and Ni) catalysts can overcome this difficulty by utilizing functionalities arising from concerted role of active defects on the support surface and loaded transition metals. These catalysts enable ammonia production through multiple reaction pathways. The reaction rate of Co/SrNH is as high as 1686.7 mmol·gCo-1·h-1 and the TOFs reaches above 500 h-1 at 400 °C and 0.9 MPa, outperforming other reported Co-based catalysts as well as the benchmark Cs-Ru/MgO catalyst and industrial wüstite-based Fe catalyst under the same reaction conditions. Experimental and theoretical results show that the synergistic effect of nitrogen affinity of 3d TMs and in-situ formed NH2- vacancy of alkali earth imides regulate the reaction pathways of the ammonia production, resulting in distinct catalytic performance different from 3d TMs. It was thus demonstrated that the appropriate combination of metal and support is essential for controlling the reaction pathway and realizing highly active and low cost catalysts for ammonia synthesis.
For the extraction of hydrogen from ammonia at low temperatures, we investigated Ni-based catalysts fabricated by the thermal decomposition of RNi5 intermetallics (R = Ce or Y). The interconnected microstructure formed via phase separation between the Ni catalyst and the resulting oxide support was observed to evolve via low-temperature thermal decomposition of RNi5. The resulting Ni/CeO2 nanocomposite exhibited superior catalytic activity of â¼25% at 400 °C for NH3 cracking. The high catalytic activity was attributed to the interlocking of Ni nanoparticles with the CeO2 framework. The growth of Ni nanoparticles was prevented by this interconnected microstructure, in which the Ni nanoparticles incorporated nitrogen owing to the size effect, whereas Ni does not commonly form nitrides. To the best of our knowledge, this is a unique example of a microstructure that enhances catalytic NH3 cracking.
Topological materials have received much attention because of their robust topological surface states, which can be potentially applied in electronics and catalysis. Here, we show that the topological insulator bismuth selenide functions as an efficient catalyst for the oxidative carbonylation of amines with carbon monoxide and dioxygen to synthesize urea derivatives. For example, the carbonylation of butylamine can be completed over bismuth selenide nanoparticle catalyst in 4 hours at 20°C with a yield of 99%, whereas most noble metal-based catalysts do not function at such a low temperature. Density functional theory calculations further reveal that the topological surface states facilitate the activation of dioxygen through a triplet-to-singlet spin-conversion reaction, in which active oxygen species are formed with a barrier of 0.4 electron volts for the subsequent reactions with amine and carbon monoxide.
While two-dimensional (2D) materials possess the desirable future of neuromorphic computing platforms, unstable charging and de-trapping processes, which are inherited from uncontrollable states, such as the interface trap between nanocrystals and dielectric layers, can deteriorate the synaptic plasticity in field-effect transistors. Here, we report a facile and effective strategy to promote artificial synaptic devices by providing physical doping in 2D transition-metal dichalcogenide nanomaterials. Our experiments demonstrate that the introduction of niobium (Nb) into 2D WSe2 nanomaterials produces charge trap levels in the band gap and retards the decay of the trapped charges, thereby accelerating the artificial synaptic plasticity by encouraging improved short-/long-term plasticity, increased multilevel states, lower power consumption, and better symmetry and asymmetry ratios. Density functional theory calculations also proved that the addition of Nb to 2D WSe2 generates defect tolerance levels, thereby governing the charging and de-trapping mechanisms of the synaptic devices. Physically doped electronic synapses are expected to be a promising strategy for the development of bioinspired artificial electronic devices.
Intermetallic electrides have recently drawn considerable attention due to their unique electronic structure and high catalytic performance for the activation of inert chemical bonds under mild conditions. However, the relationship between electride (anionic) electron abundance and catalytic performance is undefined; the key deciding factor for the performance of intermetallic electride catalysts remains to be addressed. Here, the secret behind electride catalysts La-TM-Si (TM=Co, Fe and Mn) with the same crystal structure but different anionic electrons was studied. Unexpectedly, LaCoSi with the least anionic electrons showed the best catalytic activity. The experiments and first-principles calculations showed that the electride anions promote the N2 dissociation which alters the rate-determining step (RDS) for ammonia synthesis on the studied electrides. Different reaction mechanisms were found for La-TM-Si (TM=Fe, Co) and LaMnSi. A dual-site module was revealed for LaCoSi and LaFeSi, in which transition metals were available for the N2 dissociation and La accelerates the NHx formation, respectively, breaking the Sabatier scaling relation. For LaMnSi, which is the most efficient for the N2 activation, the activity for ammonia synthesis is limited and confined by the scaling relations. The findings provide new insight into the working mechanism of intermetallic electrides.
The practical applications of two-dimensional (2D) transition-metal borides (MBenes) have been severely hindered by the lack of accessible MBenes because of the difficulties in the selective etching of traditional ternary MAB phases with orthorhombic symmetry (ort-MAB). Here, we discover a family of ternary hexagonal MAB (h-MAB) phases and 2D hexagonal MBenes (h-MBenes) by ab initio predictions and experiments. Calculations suggest that the ternary h-MAB phases are more suitable precursors for MBenes than the ort-MAB phases. Based on the prediction, we report the experimental synthesis of h-MBene HfBO by selective removal of In from h-MAB Hf2 InB2 . The synthesized 2D HfBO delivered a specific capacity of 420â mAh g-1 as an anode material in lithium-ion batteries, demonstrating the potential for energy-storage applications. The discovery of this h-MBene HfBO added a new member to the growing family of 2D materials and provided opportunities for a wide range of novel applications.
