Two-dimensional (2D) transitional metal dichalcogenides (TMDs) have garnered significant attention due to their potential for next-generation electronics, which require device scaling. However, the performance of TMD-based field-effect transistors (FETs) is greatly limited by the contact resistance. This study develops an effective strategy to optimize the contact resistance of WSe2 FETs by combining contact doping and 2D metallic electrode materials. The contact regions were doped using a laser, and the metallic TaSe2 flakes were stacked on doped WSe2 as electrodes. Doping the contact areas decreases the depletion width, while introducing the TaSe2 contact results in a lower Schottky barrier. This method significantly improves the electrical performance of the WSe2 FETs. The doped WSe2/TaSe2 contact exhibits an ultralow Schottky barrier height of 65 meV and a contact resistance of 11 kΩ·µm, which is a 50-fold reduction compared to the conventional Cr/Au contact. Our method offers a way on fabricating high-performance 2D FETs.
Real-time sweat monitoring is vital for athletes in order to reflect their physical conditions, quantify their exercise loads, and evaluate their training results. Therefore, a multi-modal sweat sensing system with a patch-relay-host topology was developed, which consisted of a wireless sensor patch, a wireless data relay, and a host controller. The wireless sensor patch can monitor the lactate, glucose, K+, and Na+ concentrations in real-time. The data is forwarded via a wireless data relay through Near Field Communication (NFC) and Bluetooth Low Energy (BLE) technology and it is finally available on the host controller. Meanwhile, existing enzyme sensors in sweat-based wearable sports monitoring systems have limited sensitivities. To improve their sensitivities, this paper proposes a dual enzyme sensing optimization strategy and demonstrates Laser-Induced Graphene (LIG)-based sweat sensors decorated with Single-Walled Carbon Nanotubes (SWCNT). Manufacturing an entire LIG array takes less than one minute and costs about 0.11 yuan in materials, making it suitable for mass production. The in vitro test result showed sensitivities of 0.53 µA/mM and 3.9 µA/mM for lactate and glucose sensing, and 32.5 mV/decade and 33.2 mV/decade for K+ and Na+ sensing, respectively. To demonstrate the ability to characterize personal physical fitness, an ex vivo sweat analysis test was also performed. Overall, the high-sensitivity lactate enzyme sensor based on SWCNT/LIG can meet the requirements of sweat-based wearable sports monitoring systems.
Graphite , Nanotubes, Carbon , Humans , Sweat , Lactic Acid , Glucose , Lasers
Interlayer excitons (ILEs) in the van der Waals (vdW) heterostructures of type-II band alignment transition metal dichalcogenides (TMDCs) have attracted significant interest owing to their unique exciton properties and potential in quantum information applications. However, the new dimension that emerges with the stacking of structures with a twist angle leads to a more complex fine structure of ILEs, presenting both an opportunity and a challenge for the regulation of the interlayer excitons. In this study, we report the evolution of interlayer excitons with the twist angle in the WSe2/WS2 heterostructure and identify the direct (indirect) interlayer excitons by combining photoluminescence (PL) and density functional theory (DFT) calculations. Two interlayer excitons with opposite circular polarization assigned to the different transition paths of K-K and Q-K were observed. The nature of the direct (indirect) interlayer exciton was confirmed by circular polarization PL measurement, excitation power-dependent PL measurement and DFT calculations. Furthermore, by applying an external electric field to regulate the band structure of the WSe2/WS2 heterostructure and control the transition path of the interlayer excitons, we could successfully realize the regulation of interlayer exciton emission. This study provides more evidence for the twist-angle-based control of heterostructure properties.
Two-dimensional InSe has been considered as a promising candidate for novel optoelectronic devices owing to large electron mobility and a near-infrared optical band gap. However, its widespread applications suffer from environmental instability. A lot of theoretical studies on the degradation mechanism of InSe have been reported whereas the experimental proofs are few. Meanwhile, the role of the extrinsic environment is still obscure during the degradation. As a common technique of studying the degradation mechanism of 2D materials, laser irradiation exhibits many unique advantages, such as being fast, convenient, and offering in situ compatibility. Here, we have developed a laser-treated method, which involves performing repeated measurements at the same point while monitoring the evolution of the resulting PL, to systematically study the photo-induced degradation process of InSe. Interestingly, we observe different evolution behavior of PL intensity under weak irradiation and strong irradiation. Our experimental results indicate the vacancy passivation and degrading effect simultaneously occurring in InSe under a weak laser irradiation, resulting in the PL increasing first and then decreasing during the measurement. Meanwhile we also notice that the passivation has a stronger effect on the PL than the degrading effect of weak oxidation. In contrast, under a strong laser irradiation, the InSe suffers serious destruction caused by excess heating and intense oxidation. This leads to a direct decrease of PL and corresponding oxidative products. Our work provides a reliable experimental supplement to the photo oxidation study of InSe and opens up a new avenue to regulate the PL of InSe.
Two-dimensional (2D) materials and their van der Waals stacked heterostructures (vdWH) are becoming the rising and glowing candidates in the emerging flexible nanoelectronics and optoelectronic industry. Strain engineering proves to be an efficient way to modulate the band structure of 2D materials and their vdWH, which will broaden understanding and practical applications of the material. Therefore, how to apply desired strain to 2D materials and their vdWH is of great importance to get the intrinsic understanding of 2D materials and their vdWH with strain modulation. Here, systematic and comparative studies of strain engineering on monolayer WSe2 and graphene/WSe2 heterostructure are studied by photoluminescence (PL) measurements under uniaxial tensile strain. It is found that contacts between graphene and WSe2 interface are improved, and the residual strain is relieved through the pre-strain process, which thus results in the comparable shift rate of the neutral exciton (A) and trion (AT) of monolayer WSe2 and graphene/WSe2 heterostructure under the subsequent strain release process. Furthermore, the PL quenching occurred when the strain is restored to the original position also indicates the pre-strain process to 2D materials, and their vdWH is important and necessary for improving the interface contacts and reducing the residual strain. Thus, the intrinsic response of the 2D material and their vdWH under strain can be obtained after the pre-strain treatment. These findings provide a quick, fast and efficient way to apply desired strain and also have important significance in guiding the use of 2D materials and their vdWH in the field of flexible and wearable devices.
Molecular ferroelectrics (MFs) have been proven to demonstrate excellent properties even comparable to those of inorganic counterparts usually with heavy metals. However, the validation of their device applications is still at the infant stage. The polycrystalline feature of conventionally obtained MF films, the patterning challenges for microelectronics and the brittleness of crystalline films significantly hinder their development for organic integrated circuits, as well as emerging flexible electronics. Here, a large-area flexible memory array is demonstrated of oriented molecular ferroelectric single crystals (MFSCs) with nearly saturated polarization. Highly-uniform MFSC arrays are prepared on large-scale substrates including Si wafers and flexible substrates using an asymmetric-wetting and microgroove-assisted coating (AWMAC) strategy. Resultant flexible memory arrays exhibit excellent nonvolatile memory properties with a low-operating voltage of <5 V, i.e., nearly saturated ferroelectric polarization (6.5 µC cm-2 ), and long bending endurance (>103 ) under various bending radii. These results may open an avenue for scalable flexible MF electronics with high performance.
The emergence of near-eye displays, such as head-mounted displays, is triggering a requirement for highly enhanced display resolution. High-resolution micro-displays with micro-organic light-emitting diodes (micro-OLEDs) can be a preferential candidate, owing to the mature industrialization of OLEDs along with the advantages of flexibility, light weight, and ease of processing. However, micro-OLEDs with pixel sizes down to micrometers are difficult to be achieved using conventional techniques such as fine metal mask evaporation and lithography. Here, a solution-processing approach to pattern organic semiconductors (OSCs) for micro-OLED arrays with the assistance of templated dewetting is demonstrated. Solvents containing organic functional materials are dewetted on the surface with hydrophobic/hydrophilic patterns to form ordered droplet arrays using dip-coating. Subsequently, patterned OSC films are produced by effectively controlling solvent evaporation. Micro-OLED arrays with a pixel size down to 1 µm are successfully fabricated by further deposition of emitting/electron transport layers and top electrodes. This approach can open an avenue for low-cost manufacturing of flexible and high-resolution micro-displays.
Metals , Semiconductors , Electrodes , Equipment Design
Monolayer MoS2 is a direct bandgap semiconductor which is believed to be one of the most promising candidates for optoelectronic devices. Chemical vapor deposition (CVD) is the most popular method to synthesize monolayer MoS2 with a large area. However, many defects are always found in monolayer MoS2 grown by CVD, such as sulfur vacancies, which severely degrade the performance of devices. This work demonstrates a concise and effective method for direct growth of high quality monolayer MoS2 by using SiO2/Si substrates pretreated with sulfur vapor. The MoS2 monolayer obtained using this method shows about 20 times PL intensity enhancement and a much narrower PL peak width than that grown on untreated substrates. Detailed characterization studies reveal that MoS2 grown on sulfur vapor pretreated SiO2/Si substrates has a much lower density of sulfur vacancies. The synthesis of monolayer MoS2 with high optical quality and low defect concentration is critical for both fundamental physics studies and potential practical device applications in the atomically thin limit.
Two-dimensional heterojunctions exhibit many unique features in nanoelectronic and optoelectronic devices. However, heterojunction engineering requires a complicated alignment process and some defects are inevitably introduced during material preparation. In this work, a laser scanning technique is used to construct a lateral WSe2 p-n junction. The laser-scanned region shows p-type behavior, and the adjacent region is electrically n-doped with a proper gate voltage. The laser-oxidized product WOx is found to be responsible for this p-type doping. After laser scanning, WSe2 displays a change from ambipolar to unipolar p-type property. A significant photocurrent emerges at the p-n junction. Therefore, a self-powered WSe2 photodetector can be fabricated based on this junction, which presents a large photoswitching ratio of 106, a high photoresponsivity of 800 mA W-1, and a short photoresponse time with long-term stability and reproducibility. Therefore, this selective laser-doping method is prospective in future electronic applications.
Transition metal dichalcogenides (TMDCs) demonstrate great potential in numerous applications. However, these applications require a precise control of layer thickness at the atomic scale. In this work, we present an in-situ study of the self-limiting oxidation process in MoTe2 by ozone (O3) treatment. A precise layer-by-layer control of MoTe2 flakes can be achieved via multiple cycles of oxidation and wet etching. The thinned MoTe2 flakes exhibit comparable optical properties and film quality to the pristine exfoliated ones. Besides, an additional p-type doping is observed after O3 oxidation. Such a p-doping effect converts the device properties of MoTe2 from electron-dominated to hole-dominated ambipolar characteristics.
2D ß-Ga2 O3 nanosheets, as fundamental materials, have great potential in next generations of ultraviolet transparent electrodes, high-temperature gas sensors, solar-blind photodetectors, and power devices, while their synthesis and growth with high crystalline quality and well-controlled orientation have not been reported yet. The present study demonstrates how to grow single-crystalline ultrathin quasi-hexagonal ß-Ga2 O3 nanosheets with nanowire seeds and proposes a hierarchy-oriented growth mechanism. The hierarchy-oriented growth is initiated by epitaxial growth of a single-crystalline ( 2 - 01 ) ß-Ga2 O3 nanowire on a GaN nanocrystal and followed by homoepitaxial growth of quasi-hexagonal (010) ß-Ga2 O3 nanosheets. The undoped 2D (010) ß-Ga2 O3 nanosheet field effect transistor has a field-effect electron mobility of 38 cm2 V-1 s-1 and an on/off current ratio of 107 with an average subthreshold swing of 150 mV dec-1 . The from-nanowires-to-nanosheets technique paves a novel way to fabricate nanosheets, which has great impact on the field of nanomaterial synthesis and growth and the area of nanoelectronics as well.
In this study, we have realized controllable fabrication of gold nanopatterns on pristine monolayer graphene by using nanosphere lithography, in which polystyrene (PS) spheres are used as templates. With this method, periodically ordered triangular Au nanopatterns are uniformly formed on graphene surface. Micro-Raman spectroscopy shows that these sacrificial PS templates have no obvious effect on graphene surface structure while the subsequently formed Au nanopatterns are found to enhance Raman intensity of G and 2D bands by surface plasmon resonance. The compressive stress introduced in the metal deposition process leads to an obvious blue shift of 2D band. Besides, the metal-induced doping effect reduces the intensity ratio between 2D and G bands. This uniform arrangement of metal nanostructure is expected to grow other nanomaterials or used as Raman enhancement substrate in biomedicine, catalyzer and optics areas.
White light generated by mixing the red, green, and blue laser diodes (RGB LDs) for simultaneous high-speed underwater wireless optical communication (UWOC) and high-efficiency underwater solid-state lighting (SSL) was proposed and demonstrated experimentally for the first time. The allowable maximum real-time data transmission rates of 3.2 Gbps, 3.4 Gbps, and 3.1 Gbps for RGB LDs with corresponding BERs of 3.6 × 10-3, 3.5 × 10-3 and 3.7 × 10-3 were obtained at a 2.3 m underwater transmission distance using an on-off keying (OOK) modulation scheme, respectively. And the corresponding UWOC aggregate data rate of 9.7 Gbps was achieved based on RGB LDs-based wavelength-division multiplexing (WDM) UWOC. Moreover, UWOC and underwater SSL by using RGB LDs mixed white light were investigated at different scenarios over an underwater link of 2.3 m. The RGB LDs mixed white light-based UWOC system without optical diffusers yielded a maximum allowable data rate of 8.7 Gbps with Commission International de l'Eclairage coordinates (CIE) of (0.3154, 0.3354), a correlated color temperature of 6322 K, a color rendering index of 69.3 and a corresponding illuminance of 7084 lux. Furthermore, optical diffusers were employed to provide large-area underwater SSL. The LDs mixed white light-based UWOC system with line and circle optical diffusers implemented data rates of 5.9 Gbps and 6.6 Gbps with CIE coordinates of (0.3183, 0.3269) and (0.3298, 0.3390), respectively. This work suggests the potential of LDs for applications in high-efficiency underwater white-light SSL and high-speed UWOC.
Photoinduced space-charges in organic optoelectronic devices, which are usually caused by poor mobility and charge injection imbalance, always limit the device performance. Here we demonstrate that photoinduced space-charge layers, accumulated at organic semiconductor-insulator interfaces, can also play a role for photocurrent generation. Photocurrent transients from organic devices, with insulator-semiconductor interfaces, were systematically studied by using the double-layer model with an equivalent circuit. Results indicated that the electric fields in photoinduced space-charge layers can be utilized for charge generation and can even induce a photovoltage reversal. Such an operational process of light harvesting would be promising for photoelectric conversion in organic devices.
Graphene is characterized by demonstrated unique properties for potential novel applications in photodetection operated in the frequency range from ultraviolet to terahertz. To date, detailed work on identifying the origin of photoresponse in graphene is still ongoing. Here, scanning photocurrent microscopy to explore the nature of photocurrent generated at the monolayer-multilayer graphene junction is employed. It is found that the contributing photocurrent mechanism relies on the mismatch of the Dirac points between the monolayer and multilayer graphene. For overlapping Dirac points, only photothermoelectric effect (PTE) is observed at the junction. When they do not coincide, a different photocurrent due to photovoltaic effect (PVE) appears and becomes more pronounced with larger separation of the Dirac points. While only PTE is reported for a monolayer-bilayer graphene junction in the literature, this work confirms the coexistence of PTE and PVE, thereby extending the understanding of photocurrent in graphene-based heterojunctions.
To enable high-speed long-distance underwater optical wireless communication (UOWC) supplementing traditional underwater wireless communication, a low-power 520 nm green laser diode (LD) based UOWC system was proposed and experimentally demonstrated to implement maximal communication capacity of up to 2.70 Gbps data rate over a 34.5 m underwater transmission distance by using non-return-to-zero on-off keying (NRZ-OOK) modulation scheme. Moreover, maximum data rates of up to 4.60 Gbps, 4.20 Gbps, 3.93 Gbps, 3.88 Gbps, and 3.48 Gbps at underwater distances of 2.3 m, 6.9 m, 11.5 m, 16.1 m and 20.7 m were achieved, respectively. The light attenuation coefficient of ~0.44 dB/m was obtained and the beam divergence angle is 0.35°, so the aallowable underwater transmission distance can be estimated to be ~90.7 m at a data rate of 0.15 Gbps with a corresponding received light-output power of -33.01 dBm and a bit-error rate (BER) of 2.0 ×10-6. In addition, when the data rate is up to 1 Gbps, the UOWC distance is predicted to be ~62.7 m for our proposed UOWC system. The achievements we make are suitable for applications requiring high-speed long-distance real-time UOWC.
High-speed underwater optical wireless communication (UOWC) was achieved using an 80 µm blue-emitting GaN-based micro-LED. The micro-LED has a peak emission wavelength of ~440 nm and an underwater power attenuation of 1 dB/m in tap water. The -3 dB electrical-to-optical modulation bandwidth of the packaged micro-LED increases with increasing current and saturates at ~160 MHz. At an underwater distance of 0.6 m, 800 Mb/s data rate was achieved with a bit error rate (BER) of 1.3 × 10-3, below the forward error correction (FEC) criteria. And we obtained 100 Mb/s data communication speed with a received light output power of -40 dBm and a BER of 1.9 × 10-3, suggesting that UOWC with extended distance can be achieved. Through reflecting the light emission beam by mirrors within a water tank, we experimentally demonstrated a 200 Mb/s data rate with a BER of 3.0 × 10-6 at an underwater distance of 5.4 m.
A novel planar architecture has been developed for the study of photodetectors utilizing the transient photocurrent response induced by a metal/insulator/semiconductor/metal (MISM) structured device, where the insulator is an ionic liquid (IL-MISM). Using vanadyl 2,3-naphthalocyanine, which absorbs in the communications-relevant near-infrared wavelength region (λ(max,film) ≈ 850 nm), in conjunction with C60 as a bulk heterojunction, the high capacitance of the formed electric double layers at the ionic liquid interfaces yields high charge separation efficiency within the semiconductor layer, and the minimal potential drop in the bulk ionic liquid allows the electrodes to be offset by distances of over 7 mm. Furthermore, the decrease in operational speed with increased electrode separation is beneficial for a clear modeling of the waveform of the photocurrent signal, free from the influence of measurement circuitry. Despite the use of a molecular semiconductor as the active layer in conjunction with a liquid insulating layer, devices with a stability of several days could be achieved, and the operational stability of such devices was shown to be dependent solely on the solubility of the active layer in the ionic liquid, even under atmospheric conditions. Furthermore, the greatly simplified device construction process, which does not rely on transparent electrode materials or direct electrode deposition, provides a highly reproducible platform for the study of the electronic processes within IL-MISM detectors that is largely free from architectural constraints.
Electrodes , Ionic Liquids/chemistry
Photodetectors supply an electric response when illuminated. The detectors in this study consist of an active layer and a polyvinylidene fluoride (PVDF) blocking layer, which are sandwiched by an aluminum and an indium tin oxide (ITO) electrode. The active layer was prepared of Zn porphyrins and assembled by covalent layer-by-layer (LbL) deposition. Layer growth was monitored by UV-vis absorbance, ellipsometry, and X-ray photoelectron spectroscopy. Upon exposure to chopped light, the detectors show an alternating transient photocurrent, which is limited by the accumulation of space charges at the blocking layer/active layer interface. We could show that the number of photoactive layers has a significant impact on device performance. The fastest response was achieved with fewer layers. The highest photocurrents were measured for detectors with an intermediate number of layers, beyond which, more layers did not lead to an increase in the photocurrent despite containing more active material.
Organic optoelectronic devices are usually driven by the electric field generated from an electrode potential difference or bias voltage. Although poled ferroelectric domains may produce oriented stray fields, few efforts have been made to utilize them for photocurrent generation in organic devices. Here we show that large net fields caused by incomplete screening during ferroelectric polarization, and which can be 'restored' by short voltage pulses, can facilitate exciton dissociation in organic semiconductors. The oriented fields, comparable with that produced by an electrode potential difference (1~10 MV m(-1)), here are found to be responsible for the photocurrent in our devices. A prototype for an organic photodetector driven by such stray fields is demonstrated. The photoresponsivity, without any optimization, can achieve ~0.1 mA W(-1). This study provides a different operation principle for the generation of photocurrent in organic optoelectronic devices. Furthermore, the polarity-tunable photoresponse may lead to new photoresponsive memory devices.
