Antireflection microstructures on ZnSe for mid- and far-IR fabricated by femtosecond laser ablation assisted with wet chemical etching.

Most infrared materials used in high-power systems, such as optical parametric generators, have high values of refractive indices, which result in high Fresnel losses. The performance of conventional antireflection coatings is limited when used in high-power and ultra-broadband systems. An alternative approach is to fabricate antireflection microstructures (ARMs) that allow for a broadband increase in transmittance without reducing the damage threshold of the material. In this work, ARMs were fabricated on the surface of ZnSe crystals using the femtosecond laser ablation assisted with wet chemical etching method. This allowed to produce high aspect ratio microstructures that increase the transmittance up to 98% in the mid- and far- infrared regions.