Role of early short-term cardiac rehabilitation in patients undergoing pacemaker implantation.

Exercise-based cardiac rehabilitation (CR) improves the clinical outcomes in patients with cardiovascular diseases. However, few data exist regarding the role of early short-term CR in patients undergoing pacemaker (PM) implantation. We assessed whether short-term CR following PM implantation was sufficient to improve both physical function and quality of life (QOL). A total of 27 patients with a 6-minute walking distance (6MWD) of less than 85% of the predicted value on the day following PM implantation were randomly assigned to either the CR group (n = 12, 44.4%) or the non-CR group (n = 15, 55.6%). The CR group involved individualized exercise-based training with moderate intensity for 4 weeks after PM implantation. Cardiopulmonary exercise test (CPET), 6MWD, muscle strength, and Short Form (SF)-36 were assessed at baseline and at the 4-week follow-up. After a mean follow-up period of 38.3 days, both groups showed significantly improved 6MWD. Peak oxygen uptake improved in both groups on CPET, but the difference was not statistically significant. Knee extension power and handgrip strength were similar in both groups. Regarding QOL, only the CR group showed improved SF-36 scores in the items of vitality and mental health. There was no difference in any subscale in the non-CR group. Neither lead dislodgement nor significant changes in PM parameters were observed in any patient. Early short-term CR following PM implantation was associated with improved psychological subscales and can be safely performed without increasing the risk of procedure-related complications.

Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p-Type Oxide Semiconductor.

p-Type SnO thin films were deposited on a Si substrate by a cosputtering process using ceramic SnO and metal Sn targets at room temperature without adding oxygen. By varying the dc sputtering power applied to the Sn target while maintaining a constant radio frequency power to the SnO target, the Sn/O ratio varied from 56:44 to 74:26 at the as-deposited state. After thermal annealing at 180 °C for 25 min under air atmosphere using a microwave annealing system, the films were crystallized into tetragonal SnO when the Sn/O ratio increased from 44:56 to 57:43. Notably, the metallic Sn remained when the Sn/O ratio was higher than 55:45 at an annealed state. When the ratio was lower than 55:45 at the annealed state, the incorporated Sn fully oxidized to SnO, making the films useful p-type semiconductors, whereas the films became metallic conductors at higher Sn/O ratios. At the Sn/O ratio of 55:45 at the annealed state, the film showed the highest Hall mobility of 8.8 cm2 V-1 s-1 and a hole concentration of 5.4 × 1018 cm-3. Interestingly, the electrical conduction behavior showed trap-mediated hopping when the Sn metal was cosputtered, whereas the single SnO film showed regular band conduction behavior. The residual stress effect could interpret such property variation originated from the sputtering power and postoxidation-induced volumetric effects. This report makes a critical contribution to the in-depth understanding of the composition-structure-property relationship of this technically important thin film material.