RESUMEN
Heterostructures of two-dimensional transition metal dichalcogenides (TMDs) can offer a plethora of opportunities in condensed matter physics, materials science, and device engineering. However, despite state-of-the-art demonstrations, most current methods lack enough degrees of freedom for the synthesis of heterostructures with engineerable properties. Here, we demonstrate that combining a postgrowth chalcogen-swapping procedure with the standard lithography enables the realization of lateral TMD heterostructures with controllable dimensions and spatial profiles in predefined locations on a substrate. Indeed, our protocol receives a monolithic TMD monolayer (e.g., MoSe2) as the input and delivers lateral heterostructures (e.g., MoSe2-MoS2) with fully engineerable morphologies. In addition, through establishing MoS2xSe2(1-x)-MoS2ySe2(1-y) lateral junctions, our synthesis protocol offers an extra degree of freedom for engineering the band gap energies up to â¼320 meV on each side of the heterostructure junction via changing x and y independently. Our electron microscopy analysis reveals that such continuous tuning stems from the random intermixing of sulfur and selenium atoms following the chalcogen swapping. We believe that, by adding an engineering flavor to the synthesis of TMD heterostructures, our study lowers the barrier for the integration of two-dimensional materials into practical optoelectronic platforms.
RESUMEN
From the fundamental principle of causality we show that epsilon-near-zero (ENZ) materials with a very low (asymptotically zero) intrinsic dielectric loss do necessarily possess a very low (asymptotically zero) group velocity of electromagnetic wave propagation. This leads to the loss function being singular and causes high nonradiative damping of the optical resonators and emitters (plasmonic nanoparticles, quantum dots, chromophore molecules) embedded into them or placed at their surfaces. Rough ENZ surfaces do not exhibit hot spots of local fields suggesting that surface modes are overdamped. Reflectors and waveguides also show very large losses both for realistic and idealized ENZ materials.
RESUMEN
Black phosphorus (BP) is an emerging two-dimensional material with intriguing physical properties. It is highly anisotropic and highly tunable by means of both the number of monolayers and surface doping. Here, we experimentally investigate and theoretically interpret the near-field properties of a-few-atomic-monolayer nanoflakes of BP. We discover near-field patterns of bright outside fringes and a high surface polarizability of nanofilm BP consistent with its surface-metallic, plasmonic behavior at mid-infrared frequencies <1176 cm-1. We conclude that these fringes are caused by the formation of a highly polarizable layer at the BP surface. This layer has a thickness of ~1 nm and exhibits plasmonic behavior. We estimate that it contains free carriers in a concentration of n≈1.1 × 1020 cm-3. Surface plasmonic behavior is observed for 10-40 nm BP thicknesses but absent for a 4-nm BP thickness. This discovery opens up a new field of research and potential applications in nanoelectronics, plasmonics and optoelectronics.
RESUMEN
We demonstrate dynamic reversible switching of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed for the first time in the near-field. Using polarization-selective near-field imaging techniques, we simultaneously monitor the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipole nanoantennas to monopole nanoantennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. These unique features open up promising novel applications in active nanophotonics.