RESUMEN
Monolayers of transition-metal dichalcogenides (TMDs) are promising components for flexible optoelectronic devices because of their direct band gap and atomically thin nature. The photoluminescence (PL) from these materials is often strongly suppressed by nonradiative recombination mediated by midgap defect states. Here, we demonstrate up to a 200-fold increase in PL intensity from monolayer MoS2 synthesized by chemical vapor deposition (CVD) by controlled exposure to laser light in the ambient. This spatially resolved passivation treatment is stable in air and vacuum. Regions unexposed to laser light remain dark in fluorescence despite continuous impingement of ambient gas molecules. A wavelength-dependent study confirms that PL brightening is concomitant with exciton generation in the MoS2; laser light below the optical band gap fails to produce any enhancement in the PL. We highlight the photosensitive nature of the process by successfully brightening with a low-power broadband white light source. We decouple changes in absorption from defect passivation by examining the degree of circularly polarized PL. This measurement, which is independent of exciton generation, confirms that laser brightening reduces the rate of nonradiative recombination in the MoS2. A series of gas exposure studies demonstrate a clear correlation between PL brightening and the presence of water. We propose that H2O molecules passivate sulfur vacancies in the CVD-grown MoS2 but require photogenerated excitons to overcome a large adsorption barrier. This work represents an important step in understanding the passivation of CVD-synthesized TMDs and demonstrates the interplay between adsorption and exciton generation.
RESUMEN
Electron-donors can impart charge to the surface of transition metal dichalcogenide (TMD) films while interacting with the film via a weak physisorption bond, making them ideal for vapor and gas sensors. We expose monolayer MoS2 and MoSe2 films to strong electron-donor chemical vapor analytes. After analyzing the resultant behavior and taking into consideration doping effects, we conclude that exposure to strong electron-donors could be a method of inducing the semiconductor-metal 2H-1T TMD phase transition. We find that the conductance response to strong electron donors in both monolayer MoS2 and MoSe2 FET devices ceases after moderate exposure, with final value of the conductance being on order of that expected for the 1T phase. Full device relaxation back to a semiconducting state is accomplished by annealing in vacuum at 400 °C. We also examine chemically exposed TMD films intermittently interrogated with Raman and photoluminescence spectroscopy. We observe the appearance of weak characteristic 1T phase Raman features for MoS2 and we observed a quenching of the photoluminescence of both TMD films that is recoverable with annealing. Considering all of our data together, the effects cannot be described by doping alone. Additionally, our results suggest a mechanism for a new type of passive chemical vapor sensor.
RESUMEN
We report room-temperature negative magnetoresistance in ferromagnet-graphene-ferromagnet (FM|Gr|FM) junctions with minority spin polarization exceeding 80%, consistent with predictions of strong minority spin filtering. We fabricated arrays of such junctions via chemical vapor deposition of multilayer graphene on lattice-matched single-crystal NiFe(111) films and standard photolithographic patterning and etching techniques. The junctions exhibit metallic transport behavior, low resistance, and the negative magnetoresistance characteristic of a minority spin filter interface throughout the temperature range 10 to 300 K. We develop a device model to incorporate the predicted spin filtering by explicitly treating a metallic minority spin channel with spin current conversion and a tunnel barrier majority spin channel and extract spin polarization of at least 80% in the graphene layer in our structures. The junctions also show antiferromagnetic coupling, consistent with several recent predictions. The methods and findings are relevant to fast-readout low-power magnetic random access memory technology, spin logic devices, and low-power magnetic field sensors.
RESUMEN
We report on preparation dependent properties observed in monolayer WS2 samples synthesized via chemical vapor deposition (CVD) on a variety of common substrates (Si/SiO2, sapphire, fused silica) as well as samples that were transferred from the growth substrate onto a new substrate. The as-grown CVD materials (as-WS2) exhibit distinctly different optical properties than transferred WS2 (x-WS2). In the case of CVD growth on Si/SiO2, following transfer to fresh Si/SiO2 there is a ~50 meV shift of the ground state exciton to higher emission energy in both photoluminescence emission and optical reflection. This shift is indicative of a reduction in tensile strain by ~0.25%. Additionally, the excitonic state in x-WS2 is easily modulated between neutral and charged exciton by exposure to moderate laser power, while such optical control is absent in as-WS2 for all growth substrates investigated. Finally, we observe dramatically different laser power-dependent behavior for as-grown and transferred WS2. These results demonstrate a strong sensitivity to sample preparation that is important for both a fundamental understanding of these novel materials as well as reliable reproduction of device properties.
RESUMEN
Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. While fundamental investigations can be performed on exfoliated material, large-area and high quality materials are essential for implementation of technological applications. In this work, we synthesize monolayer WS2 under various controlled conditions and characterize the films using photoluminescence, Raman and x-ray photoelectron spectroscopies. We demonstrate that the introduction of hydrogen to the argon carrier gas dramatically improves the optical quality and increases the growth area of WS2, resulting in films exhibiting mm(2) coverage. The addition of hydrogen more effectively reduces the WO3 precursor and protects against oxidative etching of the synthesized monolayers. The stoichiometric WS2 monolayers synthesized using Ar + H2 carrier gas exhibit superior optical characteristics, with photoluminescence emission full width half maximum (FWHM) values below 40 meV and emission intensities nearly an order of magnitude higher than films synthesized in a pure Ar environment.
RESUMEN
We report the first observation of linear magnetoresistance (LMR) in multilayer epitaxial graphene grown on SiC. We show that multilayer epitaxial graphene exhibits large LMR from 2.2 K up to room temperature and that it can be best explained by a purely quantum mechanical model. We attribute the observation of LMR to inhomogeneities in the epitaxially grown graphene film. The large magnitude of the LMR suggests potential for novel applications in areas such as high-density data storage and magnetic sensors and actuators.
RESUMEN
To make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO(2), GaN and Al(2)O(3) substrates using a thermal release tape. Subsequent Hall effect measurements illustrated that minimal degradation in the carrier mobility was induced following the transfer process in lithographically patterned devices. Correspondingly, a large drop in the carrier concentration was observed following the transfer process, supporting the notion that a gradient in the carrier density is present in C-face EG, with lower values being observed in layers further removed from the SiC interface. X-ray photoemission spectra collected from EG films attached to the transfer tape revealed the presence of atomic Si within the EG layers, which may indicate the identity of the unknown intrinsic dopant in EG. Finally, this transfer process is shown to enable EG films amenable for use in device fabrication on arbitrary substrates and films that are deemed most beneficial to carrier transport, as flexible electronic devices or optically transparent contacts.
RESUMEN
We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on SiC(0001) is highly dependent on thickness and monolayer strain uniformity. Additionally, we achieve high mobility epitaxial graphene (18100 cm(2)/(V s) at room temperature) on SiC(0001) and show that carrier mobility depends strongly on the graphene layer stacking.
RESUMEN
An omega-fluorine-labeled oxyethylene thiol ligand, F(CH2CH2O)2CH2CH2SH, was synthesized, characterized and incorporated into mixed self-assembled monolayers with CH3(OCH2CH2)3SH onto a planar gold substrate and onto 2 nm gold nanoclusters. The fluorine-labeled nanocluster was self-assembled onto gold substrates using alkane dithiol (HS(CH2)nSH; n = 5, 8, 11) and oxyethylene dithiol (HS(CH2CH2O)nCH2CH2SH; n = 1, 2, 3) linking agents with equivalent chain lengths for comparative purposes. X-ray photoelectron spectroscopy (XPS) was used to track the fluorine-label in the self-assembly operations and to evaluate the effectiveness of the dithiols. For adequate XPS sensitivity at least 10% of the monolayer-forming molecules should be functionalized with this fluorine-label. In the comparative self-assembly of the fluorine-labeled gold nanoclusters in chloroform solution, the alkane dithiols were observed to be the more effective linking agents. This effectiveness correlates with the XPS analysis of alkane dithiols self-assembling onto the gold substrates with a higher packing density and with a larger fraction of molecules having one thiol group as opposed to two bonded to the gold surface. The oxyethylene dithiols self-assemble with a smaller packing density and a smaller fraction of molecules with an unbonded thiol group available for self-assembly.
RESUMEN
We present X-ray photoelectron spectroscopy, van der Pauw Hall mobilities, low-temperature far-infrared magneto transmission (FIR-MT), and atomic force microscopy (AFM) results from graphene films produced by radiative heating in an ultrahigh vacuum (UHV) chamber or produced by radio frequency (RF) furnace annealing in a high vacuum chemical vapor deposition system on Si- and C-face 4H SiC substrates at 1200-1600 degrees C. Although the vacuum level and heating methods are different, graphene films produced by the two methods are chemically similar with the RF furnace annealing typically producing thicker graphene films than UHV. We observe, however, that the formation of graphene on the two faces is different with the thicker graphene films on the C-face RF samples having higher mobility. The FIR-MT showed a 0(-1) --> 1(0) Landau level transition with a square root B dependence and a line width consistent with a Dirac fermion with a mobility >250,000 cm(2) x V(-1) x s(-1) at 4.2 K in a C-face RF sample having a Hall-effect carrier mobility of 425 cm(2) x V(-1) x s(-1) at 300 K. AFM shows that graphene grows continuously over the varying morphology of both Si and C-face substrates.
