Tunable slow and fast light in a silicon-on-insulator Fano resonator.

Tunable slow and fast light generation in a silicon-on-insulator (SOI) Fano resonator is proposed and experimentally demonstrated. The slow and fast light generation with symmetric and asymmetric coupling conditions of the Fano resonator is theoretically analyzed. Under a slightly imbalanced coupling condition, the two output ports of the Fano resonator could produce a fast light and a slow light, respectively. By utilizing the thermo-optic (TO) effect to change the phase difference of the two optical beams coupled into the resonator, the transition of fast and slow light can be realized at the fixed resonance wavelength. Experimental results show that a slow-to-fast transition (group delay from 0.852 to -1.057 ns) at one resonance wavelength, and a fast-to-slow transition (group delay from -0.22 to 0.867 ns) at another resonance wavelength are realized simultaneously by controlling the microheater to tune the phase difference.

Increasing wavelength-controlled steering range of an optical phased array by using two subarrays.

We demonstrate an optical phased array that consists of two subarrays based on the silicon on insulator (SOI) platform, each subarray including 16 independent channels. The demonstrated field of view of the optical phased array is 36.6∘×32.6∘ with a spot size of 1.68∘×0.0673∘. A steering range of 32.6° is achieved by combining two subarrays with different periods and tuning the wavelength from 1500 nm to 1600 nm. In another dimension, the steering is realized by introducing phase differences between channels.

Silicon nitride assisted 1×64 optical phased array based on a SOI platform.

We demonstrate a 1×64 optical phased array (OPA) based on a silicon on insulator (SOI) platform with integrated silicon nitride. The input port of the OPA is fabricated using a silicon nitride waveguide due to its advantage of allowing more optical power. The phase shifter is a silicon waveguide with heater because of the higher thermo-optic coefficient of silicon. And a double layer silicon nitride assisted grating is used in the emitter to reduce the emission strength and then increase the length of emitter to reduce the spot size. The length of the grating emitter is 1.5 mm and the measured field of view of this optical phased array is 35.5°×22.7° with spot size of 0.69°×0.075°.

Integrated photonics with programmable non-volatile memory.

Silicon photonics integrated circuits (Si-PIC) with well-established active and passive building elements are progressing towards large-scale commercialization in optical communications and high speed optical interconnects applications. However, current Si-PICs do not have memory capabilities, in particular, the non-volatile memory functionality for energy efficient data storage. Here, we propose an electrically programmable, multi-level non-volatile photonics memory cell (PMC) fabricated by standard complementary-metal-oxide-semiconductor (CMOS) compatible processes. A micro-ring resonator (MRR) was built using the PMC to optically read the memory states. Switching energy smaller than 20 pJ was achieved. Additionally, a MRR memory array was employed to demonstrate a four-bit memory read capacity. Theoretically, this can be increased up to ~400 times using a 100 nm free spectral range broadband light source. The fundamental concept of this design provides a route to eliminate the von Neumann bottleneck. The energy-efficient optical storage can complement on-chip optical interconnects for neutral networking, memory input/output interfaces and other computational intensive applications.

Analysis of the polarization rotation effect in the inversely tapered spot size converter.

Inversely tapered spot size converter (SSC) is widely used to connect silicon waveguide with fiber in silicon photonics. However, the tapered structure may cause polarization rotation and further generate interference fluctuation in the transmission spectrum even of a straight waveguide. We analyzed the light propagation in a straight waveguide with SSC at the both ends with coupling matrix and transmission matrix methods. The analysis results matched with the phenomena we observed in the transmission spectrum. Combining the analysis with the measurement results, we calculated the polarization rotation efficiency of the SSC in different samples and analyzed the origin of the polarization rotation effect. Finally, we discussed the influence of the effect to the DP-QPSK signal and proposed several methods to release the impact.

Ultra-compact and broadband Si photonics polarization rotator by self-alignment process.

An ultra-simple polarization rotator is demonstrated on SOI platform with self-aligned process to enhance performance repeatability and manufactural yield. The polarization rotation is essentially achieved by the symmetry breaking of a channel waveguide with a single-sided slab. The two-step lithography enabling this structure is fully compatible with the mainstream process flow of Si photonic integration. A polarization conversion efficiency of 93% is obtained at 1560nm in less than 10µm light propagation length. The merit of flat-band operation (> 100nm) by using asymmetric waveguide for polarization rotation is inherited.

Microring resonator photodetector for enhancement in L-band performance.

We proposed a microring resonator (MRR) enhanced photodetector (PD) structure. Resonance wavelength enhanced by the MRR amplifies the PD response. At L-band wavelengths, responsivity was doubled for an ultra-short germanium PD of 4 µm employing the MRR structure. Data rates of up to 40 Gb/s were also demonstrated at 1600 nm.

Mode size converter between high-index-contrast waveguide and cleaved single mode fiber using SiON as intermediate material.

High-index-contrast (HIC) waveguide such as Si and Si3N4 has small mode size enabling compact integration. However, the coupling loss with single mode fiber is also remarkable owning to the mode mismatching. Therefore, mode size converter, as the interface between HIC waveguide and optical fiber, takes an important role in the field of integrated optics. The material with refractive index (RI) between HIC waveguide and optical fiber can be used as a bridge to reduce the mode mismatching loss. In this letter, we employ silicon oxynitride (SiON) with RI about 1.50 as the intermediate material and optimize the structure of the SiON waveguide to match with cleaved single mode fiber and HIC waveguide separately. Combined with inverse taper and suspended structure, the mismatching loss is reduced and the dependence to the dimension of the structure is also released. The coupling loss is 1.2 and 1.4 dB/facet for TE and TM mode, respectively, with 3 dB alignment tolerance of ± 3.5 µm for Si(3)N(4) waveguide with just 200 nm-wide tip. While for Si waveguide, a critical dimension of 150 nm is applied due to the higher index contrast than Si(3)N(4) waveguide. Similar alignment tolerance is realized with coupling loss about 1.8 and 2.1 dB/facet for TE and TM mode. The polarization dependence loss (PDL) for both platforms is within 0.5 dB.

Silicon optical modulator with shield coplanar waveguide electrodes.

A silicon Mach-Zehnder Interferometer (MZI) optical modulator with a shield coplanar waveguide (CPW) transmission line electrode design was demonstrated. This shield-CPW electrode suppresses the signal distortion caused by the parasitic slot-line (SL) mode and improves the electrical bandwidth and the electro-optical (EO) bandwidth. With the shield-CPW electrodes and 5.5 mm-long phase shifters, the silicon MZI optical modulator delivered an EO bandwidth of above 24 GHz and a V (π) = 3.0 V was achieved at λ = 1310 nm. When modulated at 28-Gb/s data rate, it achieved an extinction ratio of 5.66 dB under a driving voltage of V (pp) = 1.3 V, corresponding to a power consumption of 0.8 pJ/bit.

Loop coupled resonator optical waveguides.

We propose a novel coupled resonator optical waveguide (CROW) structure that is made up of a waveguide loop. We theoretically investigate the forbidden band and conduction band conditions in an infinite periodic lattice. We also discuss the reflection- and transmission- spectra, group delay in finite periodic structures. Light has a larger group delay at the band edge in a periodic structure. The flat band pass filter and flat-top group delay can be realized in a non-periodic structure. Scattering matrix method is used to calculate the effects of waveguide loss on the optical characteristics of these structures. We also introduce a tunable coupling loop waveguide to compensate for the fabrication variations since the coupling coefficient of the directional coupler in the loop waveguide is a critical factor in determining the characteristics of a loop CROW. The loop CROW structure is suitable for a wide range of applications such as band pass filters, high Q microcavity, and optical buffers and so on.

Three-dimensional (3D) monolithically integrated photodetector and WDM receiver based on bulk silicon wafer.

We propose a novel three-dimensional (3D) monolithic optoelectronic integration platform. Such platform integrates both electrical and photonic devices in a bulk silicon wafer, which eliminates the high-cost silicon-on-insulator (SOI) wafer and is more suitable for process requirements of electronic and photonic integrated circuits (ICs). For proof-of-concept, we demonstrate a three-dimensional photodetector and WDM receiver system. The Ge is grown on a 8-inch bulk silicon wafer while the optical waveguide is defined in a SiN layer which is deposited on top of it, with ~4 µm oxide sandwiched in between. The light is directed to the Ge photodetector from the SiN waveguide vertically by using grating coupler with a Aluminum mirror on top of it. The measured photodetector responsivity is ~0.2 A/W and the 3-dB bandwidth is ~2 GHz. Using such vertical-coupled photodetector, we demonstrated an 8-channel receiver by integrating a 1 × 8 arrayed waveguide grating (AWG). High-quality optical signal detection with up to 10 Gbit/s data rate is demonstrated, suggesting a 80 Gbit/s throughput. Such receiver can be applied to on-chip optical interconnect, DRAM interface, and telecommunication systems.

Silicon-based traveling-wave photodetector array (Si-TWPDA) with parallel optical feeding.

We demonstrate silicon-based traveling-wave photodetector arrays (Si-TWPDAs) with parallel optical feeding by integrating multiple Germanium photodetectors. Such Si-TWPDAs feature the merit of high optical saturation power with remaining the large operation bandwidth. The impedance-matched traveling-wave electrode design takes into account the individual Ge photodetector loading effect. Optical waveguide delay lines are designed in order to balance the electrical phase delay of the traveling-wave electrode. The maximum linear photocurrent at -4V biased voltage are respectively 16 mA, 38 mA, and 65 mA with integrating 1, 2, and 4 photodetectors, upon the saturation power of 40 mW, 100 mW, and 160 mW. This corresponds to a normalized photocurrent generation of >0.32 mA/µm3 and a normalized saturation power of 0.8 mW/µm3. The extracted fiber access responsivity is ~0.42 A/W and the intrinsic responsivity of ~0.82 A/W. The measured 3-dB bandwidth for 4-channel TWPDA is ~20 GHz.

PN-type carrier-induced filter with modulatable extinction ratio.

We demonstrate the first PN-type carrier-induced silicon waveguide Bragg grating filter on a SOI wafer. The optical extinction ratio of this kind of filter can be efficiently modulated under both reverse and forward biases. The carrier-induced Bragg grating based on a PN junction is fabricated on the silicon waveguide using litho compensation technology. The measured optical bandwidth and the extinction ratio of the filter are 0.45 nm and 19 dB, respectively. The optical extinction ratio modulation under the reverse bias is more than 11.5 dB and it is more than 10 dB under the forward bias. Only 1-dB optical transmission loss is realized in this Bragg grating under a reverse bias. The shifting rates of the central wavelength under forward and reverse biases are ~-1.25 nm/V and 0.01 nm/V, respectively. The 3-dB modulation bandwidth of this filter is 5.1 GHz at a bias of -10 V.

Demonstration of a vertical pin Ge-on-Si photo-detector on a wet-etched Si recess.

In this paper, we demonstrate a vertical pin Ge-on-Si photo-detector on a wet-etched Si recess on a SOI wafer. A 120 nm-deep Si recess is etched on the SOI wafer with a 340 nm-thick top Si layer by the TMAH solution. The measured results show that the responsivity is more than 0.60 A/W for TE polarization and is more than 0.65 A/W for TM polarization at 1550 nm wavelength. Compared to the photo-detector without the Si recess, the responsivities for both TE and TM polarizations are improved by ~10%. A low dark current of 170 nA is achieved at a bias voltage of -1 V. And, the 3 dB-bandwidth at a bias voltage of -3 V is 21.5 GHz. This approach can be used to improve the coupling and absorption for high responsivity of photo-detector while maintain its high speed on a thick SOI platform based on the simulation results.

Silicon-based optoelectronic integrated circuit for label-free bio/chemical sensor.

We demonstrate a silicon-based optoelectronic integrated circuit (OEIC) for label-free bio/chemical sensing application. Such on-chip OEIC sensor system consists of optical grating couplers for vertical light coupling into silicon waveguides, a thermal-tunable microring as a tunable filter, an exposed microring as an optical label-free sensor, and a Ge photodetector for a direct electrical readout. Different from the conventional wavelength-scanning method, we adopt low-cost broadband ASE light source, together with the on-chip tunable filter to generate sliced light source. The effective refractive index change of the sensing microring induced by the sensing target is traced by scanning the supplied electrical power applied onto the tracing microring, and the detected electrical signal is read out by the Ge photodetector. For bulk refractive index sensing, we demonstrate using such OEIC sensing system with a sensitivity of ~15 mW/RIU and a detection limit of 3.9 µ-RIU, while for surface sensing of biotin-streptavidin, we obtain a surface mass sensitivity of S(m) = ~192 µW/ng·mm(-2) and a surface detection limit of 0.3 pg/mm(2). The presented OEIC sensing system is suitable for point-of-care applications.

On-chip quasi-digital optical switch using silicon microring resonator-coupled Mach-Zehnder interferometer.

In this work, we demonstrate thermo-optical quasi-digital optical switch (q-DOS) using silicon microring resonator-coupled Mach-Zehnder interferometer. The optical transmission spectra show box-like response with 1-dB and 3-dB bandwidths of ~1.3 nm and ~1.6 nm, respectively. Such broadband flat-top optical response improves the tolerance to the light source wavelength fluctuation of ± 6 Å and temperature variation of ± 6 °C. Dynamic characterizations show the device with switching power of ~37 mW, switching time of ~7 µs, and on/off ratio of > 30 dB. For performance comparison, we also demonstrate a carrier injection-based electro-optical q-DOS by integrating lateral P-i-N junction with the microring resonator, which significantly reduces power consumption to ~12 mW and switching time to ~0.7 ns only.

Integrated in-band optical signal-to-noise ratio monitor implemented on SOI platform.

Based on different coherence properties of signal and noise, we measured the in-band optical signal-to-noise ratio using an integrated thermally tunable Mach-Zehnder optical delay interferometer on SOI platform. The experimental results exhibit errors smaller than 1 dB for signals with bit rate <40 Gbps over an OSNR range of 9~30 dB. The effects of the extinction ratio, noise equivalent bandwidth and arm length difference on the implementation of measurement are analyzed.

Demonstration of a directed optical decoder using two cascaded microring resonators.

We propose and demonstrate a directed optical decoder that can perform the decoding function from a two-bit electrical signal to a four-bit optical signal based on two cascaded microring resonators. We use two electrical signals regarded as a two-bit electrical signal to modulate the two microring resonators through the thermo-optic effect and four optical signals regarded as a four-bit optical signal appear at the output ports, respectively. The device operating at 10 kbps is demonstrated.

Proof of concept of directed OR/NOR and AND/NAND logic circuit consisting of two parallel microring resonators.

We propose and demonstrate a directed OR/NOR and AND/NAND logic circuit consisting of two parallel microring resonators (MRRs). We use two electrical signals representing the two operands of the logical operation to modulate the two MRRs through the thermo-optic effect, respectively. The final operation results are represented by the output optical signals. Both OR/NOR and AND/NAND operations at 10 kbps are demonstrated.

Simultaneous implementation of XOR and XNOR operations using a directed logic circuit based on two microring resonators.

We report the simultaneous implementation of the XOR and XNOR operations at two ports of a directed logic circuit based on two cascaded microring resonators (MRRs), which are both modulated through thermo-optic effect. Two electrical modulating signals applied to the MRRs represent the two operands of each logic operation. Simultaneous bitwise XOR and XNOR operations at 10 kbit/s are demonstrated in two different operating modes. We show that such a circuit can be readily realized using the plasma dispersion effect or the electric field effects, indicating its potential for high-speed operation. We further employ the scattering matrix method to analyze the spectral characteristics of the fabricated circuit, which can be regarded as a Mach-Zehnder interferometer (MZI) in whole. The two MRRs in the circuit act as wavelength-dependent splitting and combining units of the MZI. The degradation of the spectra observed in the experiment is found to be related to the length difference between the MZI's two arms. The evolution of the spectra with this length difference is presented.