Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of optoelectronic functionality1. Current efforts are limited owing to inherent inefficiencies associated with spin injection across semiconductor interfaces2. Here we demonstrate spin injection across chiral halide perovskite/III-V interfaces achieving spin accumulation in a standard semiconductor III-V (AlxGa1-x)0.5In0.5P multiple quantum well light-emitting diode. The spin accumulation in the multiple quantum well is detected through emission of circularly polarized light with a degree of polarization of up to 15 ± 4%. The chiral perovskite/III-V interface was characterized with X-ray photoelectron spectroscopy, cross-sectional scanning Kelvin probe force microscopy and cross-sectional transmission electron microscopy imaging, showing a clean semiconductor/semiconductor interface at which the Fermi level can equilibrate. These findings demonstrate that chiral perovskite semiconductors can transform well-developed semiconductor platforms into ones that can also control spin.
Se alloying has enabled significantly higher carrier lifetimes and photocurrents in CdTe solar cells, but these benefits can be highly dependent on CdSexTe1-x processing. This work evaluates the optoelectronic, chemical, and electronic properties of thick (3 µm) undoped CdSexTe1-x of uniform composition and varied processing conditions (CdSexTe1-x evaporation rate, CdCl2 anneal, Se content) chosen to reflect various standard device processing conditions. Sub-bandgap defect emission is observed, which increased as Se content increased and with "GrV-optimized CdCl2" (i.e., CdCl2 anneal conditions used for group-V-doped devices). Low carrier lifetime is found for GrV-optimized CdCl2, slow CdSexTe1-x deposition, and low-Se films. Interestingly, all films (including CdTe control) exhibited n-type behavior, where electron density increased with Se up to an estimated ≈1017 cm-3. This behavior appears to originate during the CdCl2 anneal, possibly from Se diffusion leading to anion vacancy (e.g., VSe, VTe) and ClTe generation.
Light-induced performance changes in metal halide perovskite solar cells (PSCs) have been studied intensively over the last decade, but little is known about the variation in microscopic optoelectronic properties of the perovskite heterojunctions in a completed device during operation. Here, we combine Kelvin probe force microscopy and transient reflection spectroscopy techniques to spatially resolve the evolution of junction properties during the operation of metal-halide PSCs and study the light-soaking effect. Our analysis showed a rise of an electric field at the hole-transport layer side, convoluted with a more reduced interfacial recombination rate at the electron-transport layer side in the PSCs with an n-i-p structure. The junction evolution is attributed to the effects of ion migration and self-poling by built-in voltage. Device performances are correlated with the changes of electrostatic potential distribution and interfacial carrier dynamics. Our results demonstrate a new route for studying the complex operation mechanism in PSCs.
Solar cells are essentially minority carrier devices, and it is therefore of central importance to understand the pertinent carrier transport processes. Here, we advanced a transport imaging technique to directly visualize the charge motion and collection in the direction of relevant carrier transport and to understand the cell operation and degradation in state-of-the-art cadmium telluride solar cells. We revealed complex carrier transport profiles in the inhomogeneous polycrystalline thin-film solar cell, with the influence of electric junction, interface, recombination, and material composition. The pristine cell showed a unique dual peak in the carrier transport light intensity decay profile, and the dual peak feature disappeared on a degraded cell after light and heat stressing in the lab. The experiments, together with device modeling, suggested that selenium diffusion plays an important role in carrier transport. The work opens a new forum by which to understand the carrier transport and bridge the gap between atomic/nanometer-scale chemical/structural and submicrometer optoelectronic knowledge.
A trace amount of water in an electrolyte is one of the factors detrimental to the electrochemical performance of silicon (Si)-based lithium-ion batteries that adversely affect the formation and evolution of the solid electrolyte interphase (SEI) on Si-based anodes and change its properties. Thus far, a lack of fundamental and mechanistic understanding of SEI formation, evolution, and properties in the presence of water has inhibited efforts to stabilize the SEI for improved electrochemical performance. Thus, we investigated the SEI formed in a Gen2 electrolyte (1.2 M LiPF6 in ethylene carbonate/ethyl methyl carbonate, 3:7 wt %, water content: <10 ppm) with and without additional water (50 ppm) at varying potentials (1.0, 0.5, 0.2, and 0.01 V vs Li/Li+). The impact of additional water on the morphological, (electro)chemical, and structural properties of SEI was studied using microscopic (atomic force microscopy and scanning spreading resistance microscopy) and spectroscopic (X-ray photoelectron spectroscopy, attenuated total reflection Fourier-transform infrared spectroscopy, and time-of-flight secondary ion mass spectrometry) techniques. The SEI exhibits both potential- and water concentration-dependent trends in its morphology and chemical composition. The presence of additional water in the electrolyte causes parasitic reactions, which onset at â¼1.0 V, resulting in a reduction of electrolyte components and result in the formation of an insulating, fluorophosphate-rich SEI. In addition, hydrolysis of LiPF6 creates hydrofluoric acid, which reacts with the surface oxide layer on the Si electrode, leading to a pitted and inhomogeneous SEI structure.
Nanoparticle silicon-graphite composite electrodes are a viable way to advance the cycle life and energy density of lithium-ion batteries. However, characterization of composite electrode architectures is complicated by the heterogeneous mixture of electrode components and nanoscale diameter of particles, which falls beneath the lateral and depth resolution of most laboratory-based instruments. In this work, we report an original laboratory-based scanning probe microscopy approach to investigate composite electrode microstructures with nanometer-scale resolution via contrast in the electronic properties of electrode components. Applying this technique to silicon-based composite anodes demonstrates that graphite, SiOx nanoparticles, carbon black, and LiPAA binder are all readily distinguished by their intrinsic electronic properties, with measured electronic resistivity closely matching their known material properties. Resolution is demonstrated by identification of individual nanoparticles as small as â¼20 nm. This technique presents future utility in multiscale characterization to better understand particle dispersion, localized lithiation, and degradation processes in composite electrodes for lithium-ion batteries.
Single-crystalline gallium arsenide (GaAs) grown by various techniques can exhibit hillock defects on the surface when sub-optimal growth conditions are employed. The defects act as nonradiative recombination centers and limit solar cell performance. In this paper, we applied near-field transport imaging to study hillock defects in a GaAs thin film. On the same defects, we also performed near-field cathodoluminescence, standard cathodoluminescence, electron-backscattered diffraction, transmission electron microscopy, and energy-dispersive X-ray spectrometry. We found that the luminescence intensity around the hillock area is two orders of magnitude lower than on the area without hillock defects in the millimeter region, and the excess carrier diffusion length is degraded by at least a factor of five with significant local variation. The optical and transport properties are affected over a significantly larger region than the observed topography and crystallographic and chemical compositions associated with the defect.
Silicon (Si) is a commonly studied candidate material for next-generation anodes in Li-ion batteries. A native oxide SiO2 on Si is often inevitable. However, it is not clear if this layer has positive or negative effect on the battery performance. This understanding is complicated by the lack of knowledge about the physical properties, and by convolution of chemical and electrochemical effects during the anode lithiation process. In this study, LixSiOy thin films as model materials for lithiated SiO2 were deposited by magnetron sputtering at ambient temperature, with the goal of 1) decoupling chemical reactivity from electrochemical reactivity, and 2) evaluating the physical and electrochemical properties of LixSiOy. XPS analysis of the deposited thin films demonstrate that a composition close to previous experimental reports of lithiated native SiO2, can be achieved through sputtering. Our density functional theory calculations also confirm that possible phases formed by lithiating SiO2 are very close to the measured film compositions. Scanning probe microscopy measurements show the mechanical properties of the film are strongly dependent on lithium concentration, with ductile behavior and higher Li content and brittle behavior at lower Li content. Chemical reactivity of the thin films was investigated by measuring AC impedance evolution, suggesting that LixSiOy continuously reacts with electrolyte, in part due to high electronic conductivity of the film determined from solid state impedance measurements. Electrochemical cycling data of sputter deposited LixSiOy/Si films also suggest that LixSiOy is not beneficial in stabilizing the Si anode surface during battery operation, despite its favorable mechanical properties.
Electron-selective layers (ESLs) and hole-selective layers (HSLs) are critical in high-efficiency organic-inorganic lead halide perovskite (PS) solar cells for charge-carrier transport, separation, and collection. We developed a procedure to assess the quality of the ESL/PS junction by measuring potential distribution on the cross section of SnO2-based PS solar cells using Kelvin probe force microscopy. Using the potential profiling, we compared three types of cells made of different ESLs but otherwise having an identical device structure: (1) cells with PS deposited directly on bare fluorine-doped SnO2 (FTO)-coated glass; (2) cells with an intrinsic SnO2 thin layer on the top of FTO as an effective ESL; and (3) cells with the SnO2 ESL and adding a self-assembled monolayer (SAM) of fullerene. The results reveal two major potential drops or electric fields at the ESL/PS and PS/HSL interfaces. The electric-field ratio between the ESL/PS and PS/HSL interfaces increased in devices as follows: FTO < SnO2-ESL < SnO2 + SAM; this sequence explains the improvements of the fill factor (FF) and open-circuit voltage (Voc). The improvement of the FF from the FTO to SnO2-ESL cells may result from the reduction in voltage loss at the PS/HSL back interface and the improvement of Voc from the prevention of hole recombination at the ESL/PS front interface. The further improvements with adding an SAM is caused by the defect passivation at the ESL/PS interface, and hence, improvement of the junction quality. These nanoelectrical findings suggest possibilities for improving the device performance by further optimizing the SnO2-based ESL material quality and the ESL/PS interface.
Here, we examine grain boundaries (GBs) with respect to non-GB regions (grain surfaces (GSs) and grain interiors (GIs)) in high-quality micrometer-sized perovskite CH3NH3PbI3 (or MAPbI3) thin films using high-resolution confocal fluorescence-lifetime imaging microscopy in conjunction with kinetic modeling of charge-transport and recombination processes. We show that, contrary to previous studies, GBs in our perovskite MAPbI3 thin films do not lead to increased recombination but that recombination in these films happens primarily in the non-GB regions (i.e., GSs or GIs). We also find that GBs in these films are not transparent to photogenerated carriers, which is likely associated with a potential barrier at GBs. Even though GBs generally display lower luminescence intensities than GSs/GIs, the lifetimes at GBs are no worse than those at GSs/GIs, further suggesting that GBs do not dominate non-radiative recombination in MAPbI3 thin films.
Lead thiocyanate in the perovskite precursor can increase the grain size of a perovskite thin film and reduce the conductivity of the grain boundaries, leading to perovskite solar cells with reduced hysteresis and enhanced fill factor. A planar perovskite solar cell with grain boundary and interface passivation achieves a steady-state efficiency of 18.42%.
The preparation of uniform, high-crystallinity planar perovskite films with high-aspect-ratio grains over a square-inch area is demonstrated. The best power conversion efficiency (PCE) of 16.3% (stabilized output of ≈15.6%) is obtained for a planar perovskite solar cell (PSC) with 1.2 cm2 active area, and the PCE jumps to 18.3% (stabilized output of ≈17.5%) for a PSC with a 0.12 cm2 active area.
Organometal-halide perovskite solar cells have greatly improved in just a few years to a power conversion efficiency exceeding 20%. This technology shows unprecedented promise for terawatt-scale deployment of solar energy because of its low-cost, solution-based processing and earth-abundant materials. We have studied charge separation and transport in perovskite solar cells-which are the fundamental mechanisms of device operation and critical factors for power output-by determining the junction structure across the device using the nanoelectrical characterization technique of Kelvin probe force microscopy. The distribution of electrical potential across both planar and porous devices demonstrates p-n junction structure at the TiO2/perovskite interfaces and minority-carrier diffusion/drift operation of the devices, rather than the operation mechanism of either an excitonic cell or a p-i-n structure. Combining the potential profiling results with solar cell performance parameters measured on optimized and thickened devices, we find that carrier mobility is a main factor that needs to be improved for further gains in efficiency of the perovskite solar cells.
The electrostatic potential distribution across single, isolated, colloidal heterostructured nanorods (NRs) with component materials expected to form a p-n junction within each NR has been measured using scanning Kelvin probe microscopy (SKPM). We compare CdS to bicomponent CdS-CdSe, CdS-PbSe, and CdS-PbS NRs prepared via different synthetic approaches to corroborate the SKPM assignments. The CdS-PbS NRs show a sharp contrast in measured potential across the material interface. We find the measured built-in potential within an individual NR to be attenuated by long-range electrostatic forces between the sample substrate, cantilever, and the measuring tip. Surface potential images were deconvoluted to yield built-in potentials ranging from 375 to 510 meV in the heterostructured NRs. We deduce the overall built-in potential as well as the charge distribution across each segment of the heterostructured NRs by combining SKPM data with simulations of the system.
In the research of advanced materials based on nanoscience and nanotechnology, it is often desirable to measure nanoscale local electrical conductivity at a designated position of a given sample. For this purpose, multiple-probe scanning probe microscopes (MP-SPMs), in which two, three or four scanning tunneling microscope (STM) or atomic force microscope (AFM) probes are operated independently, have been developed. Each probe in an MP-SPM is used not only for observing high-resolution STM or AFM images but also for forming an electrical contact enabling nanoscale local electrical conductivity measurement. The world's first double-probe STM (DP-STM) developed by the authors, which was subsequently modified to a triple-probe STM (TP-STM), has been used to measure the conductivities of one-dimensional metal nanowires and carbon nanotubes and also two-dimensional molecular films. A quadruple-probe STM (QP-STM) has also been developed and used to measure the conductivity of two-dimensional molecular films without the ambiguity of contact resistance between the probe and sample. Moreover, a quadruple-probe AFM (QP-AFM) with four conductive tuning-fork-type self-detection force sensing probes has been developed to measure the conductivity of a nanostructure on an insulating substrate. A general-purpose computer software to control four probes at the same time has also been developed and used in the operation of the QP-AFM. These developments and applications of MP-SPMs are reviewed in this paper.
Microscopy, Scanning Probe/instrumentation , Nanostructures/chemistry , Nanostructures/ultrastructure , Electric Conductivity , Equipment Design , Metals/chemistry , Nanotubes, Carbon/chemistry , Nanotubes, Carbon/ultrastructure , Nanowires/chemistry , Nanowires/ultrastructure , Software
