RESUMEN
Innovations in resistive switching devices constitute a core objective for the development of ultralow-power computing devices. Forming-free resistive switching is a type of resistive switching that eliminates the need for an initial high voltage for the formation of conductive filaments and offers promising opportunities to overcome the limitations of traditional resistive switching devices. Here, we demonstrate mixed charge state oxygen vacancy-engineered electroforming-free resistive switching in NiFe2O4 (NFO) thin films, fabricated as asymmetric Ti/NFO/Pt heterostructures, for the first time. Using pulsed laser deposition in a controlled oxygen atmosphere, we tune the oxygen vacancies together with the cationic valence state in the nickel ferrite phase, with the latter directly affecting the charge state of the oxygen vacancies. The structural integrity and chemical composition of the films are confirmed by X-ray diffraction and hard X-ray photoelectron spectroscopy, respectively. Electrical transport studies reveal that resistive switching characteristics in the films can be significantly altered by tuning the amount and charge state of the oxygen vacancy concentration during the deposition of the films. The resistive switching mechanism is seen to depend upon the migration of both singly and doubly charged oxygen vacancies formed as a result of changes in the nickel valence state and the consequent formation/rupture of conducting filaments in the switching layer. This is supported by the existence of an optimum oxygen vacancy concentration for efficient low-voltage resistive switching, below or above which the switching process is inhibited. Along with the filamentary switching mechanism, the Ti top electrode also enhances the resistive switching performance due to interfacial effects. Time-resolved measurements on the devices display both long- and short-term potentiation in the optimized vacancy-engineered NFO resistive switches, ideal for solid-state synapses achieved in a single system. Our work on correlated oxide forming-free resistive switches holds significant potential for CMOS-compatible low-power, nonvolatile resistive memory and neuromorphic circuits.
RESUMEN
The human subcutaneous fat layer, skin and muscle together act as a waveguide for microwave transmissions and provide a low-loss communication medium for implantable and wearable body area networks (BAN). In this work, fat-intrabody communication (Fat-IBC) as a human body-centric wireless communication link is explored. To reach a target 64 Mb/s inbody communication, wireless LAN in the 2.4 GHz band was tested using low-cost Raspberry Pi single-board computers. The link was characterized using scattering parameters, bit error rate (BER) for different modulation schemes, and IEEE 802.11n wireless communication using inbody (implanted) and onbody (on the skin) antenna combinations. The human body was emulated by phantoms of different lengths. All measurements were done in a shielded chamber to isolate the phantoms from external interference and to suppress unwanted transmission paths. The BER measurements show that, except when using dual on-body antennas with longer phantoms, the Fat-IBC link is very linear and can handle modulations as complex as 512-QAM without any significant degradation of the BER. For all antenna combinations and phantoms lengths, link speeds of 92 Mb/s were achieved using 40 MHz bandwidth provided by the IEEE 802.11n standard in the 2.4 GHz band. This speed is most likely limited by the used radio circuits, not the Fat-IBC link. The results show that Fat-IBC, using low-cost off-the-shelf hardware and established IEEE 802.11 wireless communication, can achieve high-speed data communication within the body. The obtained data rate is among the fastest measured with intrabody communication.
