Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content.

InGaN/GaN quantum wells (QWs) with sub-nanometer thickness can be employed in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as well as for exploiting topological insulator behavior in III-nitride semiconductors. However, it had been argued that the highest indium content in such ultra-thin QWs is kinetically limited to a maximum of 33%, narrowing down the potential range of applications. Here, it is demonstrated that quasi two-dimensional (quasi-2D) QWs with thickness of one atomic monolayer can be deposited with indium contents far exceeding this limit, under certain growth conditions. Multi-QW heterostructures were grown by plasma-assisted molecular beam epitaxy, and their composition and strain were determined with monolayer-scale spatial resolution using quantitative scanning transmission electron microscopy in combination with atomistic calculations. Key findings such as the self-limited QW thickness and the non-monotonic dependence of the QW composition on the growth temperature under metal-rich growth conditions suggest the existence of a substitutional synthesis mechanism, involving the exchange between indium and gallium atoms at surface sites. The highest indium content in this work approached 50%, in agreement with photoluminescence measurements, surpassing by far the previously regarded compositional limit. The proposed synthesis mechanism can guide growth efforts towards binary InN/GaN quasi-2D QWs.

Vitrification of incinerated tannery sludge in silicate matrices for chromium stabilization.

The vitrification process was applied for the stabilization and solidification of a rich in chromium ash that was the by-product of incineration of tannery sludge. Six different batch compositions were produced, based on silica as the glass former and sodium and calcium oxides as flux agents. As-vitrified products (monoliths) were either composed of silicate matrices with separated from the melt Eskolaite (Cr2O3) crystallites or were homogeneous glasses (in one case). All as-vitrified products were thermally treated in order to transform them to partially crystallized, i.e. devitrified products. Devitrification is an important part of the work since studying the transformation of the initial as-vitrified products into glass-ceramics with better properties could result to stabilized products with potential added value. The devitrified products were diversified by the effective crystallization mode and separated crystal phase composition. These variations originated from differences in: (a) batch composition of the initial as-vitrified products and (b) thermal treatment conditions. In devitrified products crystallization led to the separation of Devitrite (Na2Ca3Si6O16), Combeite (Na4Ca4Si6O18) and Wollastonite (CaSiO3) crystalline phases, while Eskolaite crystallites were not affected by thermal treatment. Leaching test results revealed that chromium was successfully stabilized inside the as-vitrified monoliths. Devitrification impairs chromium stabilization, only in the case where the initial as-vitrified product was a homogeneous glass. In all other cases, devitrification did not affect successful chromium stabilization.

Energetic, structural and electronic properties of metal vacancies in strained AlN/GaN interfaces.

AlN/GaN heterostructures have been studied using density-functional pseudopotential calculations yielding the formation energies of metal vacancies under the influence of local interfacial strains, the associated charge distribution and the energies of vacancy-induced electronic states. Interfaces are built normal to the polar <0 0 0 1> direction of the wurtzite structure by joining two single crystals of AlN and GaN that are a few atomic layers thick; thus, periodic boundary conditions generate two distinct heterophase interfaces. We show that the formation energy of vacancies is a function of their distance from the interfaces: the vacancy-interface interaction is found repulsive or attractive, depending on the type of the interface. When the interaction is attractive, the vacancy formation energy decreases with increasing the associated electric charge, and hence the equilibrium vacancy concentration at the interface is greater. This finding can reveal the well-known morphological differences existing between the two types of investigated interfaces. Moreover, we found that the electric charge is strongly localized around the Ga vacancy, while in the case of Al vacancies is almost uniformly distributed throughout the AlN/GaN heterostructure. Crucially, for the applications of heterostructures, metal vacancies introduce deep states in the calculated bandgap at energy levels from 0.5 to 1 eV above the valence band maximum (VBM). It is, therefore, predicted that vacancies could initiate 'green luminescence' i.e. light emission in the energy range of 2.5 eV stemming from electronic transitions between these extra levels, and the conduction band, or energy levels, due to shallow donors.

Incineration of tannery sludge under oxic and anoxic conditions: study of chromium speciation.

A tannery sludge, produced from physico-chemical treatment of tannery wastewaters, was incinerated without any pre-treatment process under oxic and anoxic conditions, by controlling the abundance of oxygen. Incineration in oxic conditions was performed at the temperature range from 300°C to 1200°C for duration of 2h, while in anoxic conditions at the temperature range from 400°C to 600°C and varying durations. Incineration under oxic conditions at 500°C resulted in almost total oxidation of Cr(III) to Cr(VI), with CaCrO4 to be the crystalline phase containing Cr(VI). At higher temperatures a part of Cr(VI) was reduced, mainly due to the formation of MgCr2O4. At 1200°C approximately 30% of Cr(VI) was reduced to Cr(III). Incineration under anoxic conditions substantially reduced the extent of oxidation of Cr(III) to Cr(VI). Increase of temperature and duration of incineration lead to increase of Cr(VI) content, while no chromium containing crystalline phase was detected.

Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires.

The structural properties and the strain state of InGaN/GaN superlattices embedded in GaN nanowires were analyzed as a function of superlattice growth temperature, using complementary transmission electron microscopy techniques supplemented by optical analysis using photoluminescence and spatially resolved microphotoluminescence spectroscopy. A truncated pyramidal shape was observed for the 4 nm thick InGaN inclusions, where their (0001¯) central facet was delimited by six-fold {101¯l} facets towards the m-plane sidewalls of the nanowires. The defect content of the nanowires comprised multiple basal stacking faults localized at the GaN base/superlattice interface, causing the formation of zinc-blende cubic regions, and often single stacking faults at the GaN/InGaN bilayer interfaces. No misfit dislocations or cracks were detected in the heterostructure, implying a fully strained configuration. Geometrical phase analysis showed a rather uniform radial distribution of elastic strain in the (0001¯) facet of the InGaN inclusions. Depending on the superlattice growth temperature, the elastic strain energy is partitioned among the successive InGaN/GaN layers in the case of low-temperature growth, while at higher superlattice growth temperature the in-plane tensile misfit strain of the GaN barriers is accommodated through restrained diffusion of indium from the preceding InGaN layers. The corresponding In contents of the central facet were estimated at 0.42 and 0.25, respectively. However, in the latter case, successful reproduction of the experimental electron microscopy images by image simulations was only feasible, allowing for a much higher occupancy of indium adatoms at lattice sites of the semipolar facets, compared to the invariable 25% assigned to the polar facet. Thus, a high complexity in indium incorporation and strain allocation between the different crystallographic facets of the InGaN inclusions is anticipated and supported by the results of photoluminescence and spatially resolved microphotoluminescence spectroscopy.

Atomic scale morphology, growth behaviour and electronic properties of semipolar {101[overline]3} GaN surfaces.

First-principles calculations relating to the atomic structure and electronic properties of {101[overline]3} GaN surfaces reveal significant differentiations between the two polarity orientations. The (101[overline]3) surface exhibits a remarkable morphological stability, stabilizing a metallic structure (Ga adlayer) over the entire range of the Ga chemical potential. In contrast, the semiconducting, cleaved surface is favoured on (101[overline]3[overline]) under extremely and moderately N-rich conditions, a Ga bilayer is stabilized under corresponding Ga-rich conditions and various transitions between metallic reconstructions take place in intermediate growth stoichiometries. Efficient growth schemes for smooth, two-dimensional GaN layers and the isolation of {101[overline]3} material from parasitic orientations are identified.

The size effect of crystalline inclusions on the fracture modes in glass-ceramic materials.

The main parameters influencing the mechanical performance of glass-ceramic materials are the shape and mean size of the ceramic phase, i.e. the crystalline inclusions. The aim of the present work is twofold: first, to study the effect of the above parameters on the modes of fracture in two kinds of glass-ceramic materials by the use of the static microindentation technique; second, to interpret the experimental results by the application of a simple physical model. It was found that reduction in the size of granularly shaped crystallite inclusions or reduction of the width of needle-like crystalline inclusions results in an increase of the extent of crack propagation, while the fracture mode shifts from intergranular to transgranular. These observations were successfully interpreted in terms of energetic arguments related to the size of the crystalline inclusions with respect to the width of a disordered zone acting as an interface between them and the amorphous matrix.

On the distribution and bonding environment of Zn and Fe in glasses containing electric arc furnace dust: a mu-XAFS and mu-XRF study.

We apply synchrotron radiation assisted X-ray fluorescence (SR-XRF), SR-XRF mapping as well as micro- and conventional X-ray absorption fine structure (mu-XAFS and XAFS) spectroscopies in order to study the bonding environment of Fe and Zn in vitrified samples that contain electric arc furnace dust from metal processing industries. The samples are studied in the as-cast state as well as after annealing at 900 degrees C. The SR-XRF results demonstrate that annealing does not induce any significant changes in the distribution of either Fe or Zn, in both the as-cast and annealed glasses. The mu-XAFS spectra recorded at the Fe-K and Zn-K edges reveal that the structural role of both Fe and Zn remains unaffected by the annealing procedure. More specifically, Fe forms both FeO(6) and FeO(4) polyhedra, i.e. acts as an intermediate oxide while Zn occupies tetrahedral sites.

Glass-ceramic materials from electric arc furnace dust.

Electric arc furnace dust (EAFD) was vitrified with SiO2, Na2CO3 and CaCO3 powders in an electric furnace at ambient atmosphere. Vitreous products were transformed into glass-ceramic materials by two-stage heat treatment, at temperatures determined by differential thermal analysis. Both vitreous and glass-ceramic materials were chemically stable. Wollastonite (CaSiO3) was separated from the parent matrix as the dominant crystalline phase, verified by X-ray diffraction analysis and energy dispersive spectrometry. Transmission electron microscopy revealed that wollastonite crystallizes mainly in its monoclinic form. Knoop microhardness was measured with the static indentation test method in all initial vitreous products and the microhardness values were in the region of 5.0-5.5 GPa. Devitrification resulted in glass-ceramic materials with microhardness values strongly dependent on the morphology and orientation of the separated crystal phase.

Vitrification of lead-rich solid ashes from incineration of hazardous industrial wastes.

Lead-rich solid industrial wastes were vitrified by the addition of glass formers in various concentrations, to produce non-toxic vitreous stabilized products that can be freely disposed or used as construction materials. Toxicity of both the as-received industrial solid waste and the stabilized products was determined using standard leaching test procedures. The chemically stable vitreous products were subjected to thermal annealing in order to investigate the extent of crystal separation that could occur during cooling of large pieces of glass. Leaching tests were repeated to investigate the relation between annealing process and chemical stability. X-ray, scanning and transmission electron microscopy techniques were employed to identify the microstructure of stabilized products before and after thermal treatment. Relation between synthesis and processing, chemical stability and microstructure was investigated.