RESUMEN
Despite their importance for future applications, the operational electrical stability of organic thin-film transistors is far from being understood. Even in the most stable organic field-effect transistors (OFETs) operated under vacuum, a hitherto unknown source leads to bias stress. Here, we investigate the electrical characteristics and operational stability of a high-performance diketopyrrolopyrrole- alt-terthiophene organic semiconductor. Even though the OFETs are characterized by a high mobility of 3 cm2 V-1 s-1 and trap-free transport, the threshold voltage shift in all stress modes remains sensitive to the presence of water even when operating devices in high vacuum. Exponential fitting from current bias-stress measurement up to 500 000 s showed a bias-voltage shift of <1 V, which corresponds to the density of the bias-induced trap states at infinite time NT∞ = 7.6 × 1010 cm-2. We have surprisingly found that electrical stress could be completely suppressed when devices are cooled to below 273 K. We present evidence that H3O+ and OH- stemming from the autoionization of liquid water is the hitherto unidentified universal trap (i.e., an extrinsic trap not stemming from the semiconductor itself) causing threshold voltage shift even in the otherwise stable devices. This interpretation would also clarify why in the literature similar NT have been reported in various semiconductors, suggesting that this number is independent of the organic semiconductor, processing and measurement environment but only dependent on residual contaminants-most notably water.
RESUMEN
The identification of scalable processes that transfer random mixtures of single-walled carbon nanotubes (SWCNTs) into fractions featuring a high content of semiconducting species is crucial for future application of SWCNTs in high-performance electronics. Herein we demonstrate a highly efficient and simple separation method that relies on selective interactions between tailor-made amphiphilic polymers and semiconducting SWCNTs in the presence of low viscosity separation media. High purity individualized semiconducting SWCNTs or even self-organized semiconducting sheets are separated from an as-produced SWCNT dispersion via a single weak field centrifugation run. Absorption and Raman spectroscopy are applied to verify the high purity of the obtained SWCNTs. Furthermore SWCNT - network field-effect transistors were fabricated, which exhibit high ON/OFF ratios (10(5)) and field-effect mobilities (17 cm(2)/Vs). In addition to demonstrating the feasibility of high purity separation by a novel low complexity process, our method can be readily transferred to large scale production.
RESUMEN
The realization of graphene-based, next-generation electronic applications essentially depends on a reproducible, large-scale production of graphene films via chemical vapor deposition (CVD). We demonstrate how key challenges such as uniformity and homogeneity of the copper metal substrate as well as the growth chemistry can be improved by the use of carbon dioxide and carbon dioxide enriched gas atmospheres. Our approach enables graphene film production protocols free of elemental hydrogen and provides graphene layers of superior quality compared to samples produced by conventional hydrogen/methane based CVD processes. The substrates and resulting graphene films were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and Raman microscopy, sheet resistance and transport measurements. The superior quality of the as-grown graphene films on copper is indicated by Raman maps revealing average G band widths as low as 18 ± 8 cm(-1) at 514.5 nm excitation. In addition, high charge carrier mobilities of up to 1975 cm(2)/(V s) were observed for electrons in transferred films obtained from a carbon dioxide based growth protocol. The enhanced graphene film quality can be explained by the mild oxidation properties of carbon dioxide, which at high temperatures enables an uniform conditioning of the substrates by an efficient removal of pre-existing and emerging carbon impurities and a continuous suppression and in situ etching of carbon of lesser quality being co-deposited during the CVD growth.
