RESUMEN
In this work, we present the experimental investigation on the contact resistance of graphene/single-walled carbon nanotube (SWCNT) junction using transfer length method with the simple equivalent circuit model. We find that p-n like junctions are formed in graphene/SWCNT transistors, and the contact resistance in the junction is observed to be ~ 494 and ~ 617 kΩ in case of metallic SWCNT (m-SWCNT) and semiconducting SWCNT (s-SWCNT), respectively. In addition, the contact resistance increases from 617 to 2316 kΩ as Vg increases from - 30 to - 10 V. Through our study, high carrier density induced from doping in both graphene and SWCNT leads to low contact resistance. This development of contact engineering, namely modulation of carrier density in the junction and contact length (Lcon) scaling shows the potential for all-carbon based electronics.
RESUMEN
Direct patterning of streptavidin and NIH 3T3 fibroblast cells was successfully achieved over a large-area pristine graphene sheet on Si/SiO2 by aryl azide-based photografting with the conventional UV lithographic technique and surface-initiated, atom transfer radical polymerization of oligo(ethylene glycol) methacrylate.
