The charge trap property of solution-processed zirconium acetylacetonate (ZAA) for solution-processed nonvolatile charge-trap memory (CTM) transistors is demonstrated. Increasing the annealing temperature of the ZAA from room temperature (RT) to 300°C in ambient, the carbon double bonds within the ZAA decreases. The RT-dried ZAA for the p-type organic-based CTM shows the widest threshold voltage shift (∆VTH ≈ 80 V), four distinct VTHs for a multi-bit memory operation and retained memory currents for 103 s with high memory on- and off-current ratio (IM,ON/IM,OFF ≈ 5â ©104). The n-type oxide-based CTM (Ox-CTM) also shows a ∆VTH of 14 V and retained memory currents for 103 s with IM,ON/IM,OFF ≈ 104. The inability of the Ox-CTM to be electrically erasable is well explained with simulated electrical potential contour maps. It is deduced that, irrespective of the varied solution-processed semiconductor used, the RT-dried organic ZAA as CTL shows the best memory functionality in the fabricated CTMs. This implies that the high carbon double bonds in the low-temperature processed ZAA CTL are very useful for low-cost multi-bit CTMs in flexible electronics.
We propose a sensor technology for detecting dew condensation, which exploits a variation in the relative refractive index on the dew-friendly surface of an optical waveguide. The dew-condensation sensor is composed of a laser, waveguide, medium (i.e., filling material for the waveguide), and photodiode. The formation of dewdrops on the waveguide surface causes local increases in the relative refractive index accompanied by the transmission of the incident light rays, hence reducing the light intensity inside the waveguide. In particular, the dew-friendly surface of the waveguide is obtained by filling the interior of the waveguide with liquid H2O, i.e., water. A geometric design for the sensor was first carried out considering the curvature of the waveguide and the incident angles of the light rays. Moreover, the optical suitability of waveguide media with various absolute refractive indices, i.e., water, air, oil, and glass, were evaluated through simulation tests. In actual experiments, the sensor with the water-filled waveguide displayed a wider gap between the measured photocurrent levels under conditions with and without dew, than those with the air- and glass-filled waveguides, as a result of the relatively high specific heat of the water. The sensor with the water-filled waveguide exhibited excellent accuracy and repeatability as well.
We investigated the effect of gate bias stress (GBS) on the electrical characteristics of ferroelectric oxide thin-film transistors (FeOxTFTs) with poly(vinylidenefluoride-trifluoroethylene). Generally, conventional oxide thin-film transistors (OxTFTs) with dielectric gate insulators exhibit a small negative shift under negative gate bias stress (NBS) and a large positive shift under positive gate bias stress (PBS) in transfer characteristic curves. In contrast, the FeOxTFTs show a small positive shift and a large negative shift under NBS and PBS, respectively. It was confirmed that sufficient changes in the electrical characteristics are obtained by 10 min NBS and PBS. The changed electrical characteristics such as threshold voltage shift, memory on- and memory off-current were maintained for more than 168 h after NBS and 24 h after PBS. It is deduced that, since the dipole alignment of the ferroelectric layer is maximized during GBS, these changes in electrical properties are caused by the remnant dipole moments still being retained during the gate sweep. The memory on- and memory off-current are controlled by GBS and the best on/off current ratio at 107 was obtained after NBS. By repeatedly alternating NBS and PBS, the electrical characteristics were reversibly changed. Our results provide the scientific and technological basis for the development of stability and performance optimization of FeOxTFTs.
This study proposes front colored glass for building integrated photovoltaic (BIPV) systems based on multi-layered derivatives of glass/MoO3/Al2O3 with a process technology developed to realize it. Molybdenum oxide (MoO3) and aluminum oxide (Al2O3) layers are selected as suitable candidates to achieve thin multi-layer color films, owing to the large difference in their refractive indices. We first investigated from a simulation based on wave optics that the glass/MoO3/Al2O3 multi-layer type offers more color design freedom and a cheaper fabrication process when compared to the glass/Al2O3/MoO3 multi-layer type. Based on the simulation, bright blue and green were primarily fabricated on glass. It is further demonstrated that brighter colors, such as yellow and pink, can be achieved secondarily with glass/MoO3/Al2O3/MoO3 due to enhanced multi-interfacial reflections. The fabricated color glasses showed the desired optical properties with a maximum transmittance exceeding 80%. This technology exhibits promising potential in commercial BIPV system applications.
We demonstrated the effect of a buffer layer on the electrical characteristics of ferroelectric polymer capacitors and field-effect transistors. Various polymer materials with a dielectric constant between 2 and 42 were used to form buffer layers with a similar thicknesses, but with different capacitances. In order to evaluate the characteristics of the ferroelectrics with a buffer layer, the polarization-voltage characteristics of the capacitor, the transfer characteristics, and the retention characteristics of the transistors were investigated. As the capacitance of the buffer layer increased, high remnant polarization (Pr), high hysteresis, and long retention times were observed. Exceptionally, when poly(methylmethacrylate) and rigid poly(aryl ether) (poly(9,9-bis(4-hydroxyphenyl)fluorene-co-decafluorobiphenyl)) were used as the buffer layer, Pr had a value close to 0 in the dynamic measurement polarization-voltage (P-V) characteristic, but the quasi-static measurement transfer characteristic and the static measurement retention characteristic showed relatively high hysteresis and long retention times. Our study provides a scientific and technical basis for the design of ferroelectric memory and neuromorphic devices.
We investigate the effect of a semiconducting organic buffer layer (SOBL) on the injection and transport of charges in organic field-effect transistors (OFETs). Here, two different injection barriers at the source/organic semiconductor interface are respectively studied with the aid of a numerical simulation: one is intermediate (0.4 eV), and the other is large energy barriers (0.6 eV). The introduction of nanostructure buffer layer, or SOBL, exhibits the decrease of potential loss at the contact interfaces, improving the electrical performance of the OFETs. It is also found that the energy level as well as the mobility of the SOBL plays an important role in determining the injection properties at the metal/organic hetero-interfaces and thus improving the device performance. Our systematic investigation on the injection barrier by the introduction of the nanostructure buffer layer will provide a useful guideline for the fabrication of high-performance FETs with molecular semiconductors.
We demonstrated the enhancement of the retention characteristics in solution-processed ferroelectric memory transistors. For enhanced retention characteristics, solution-processed Indium Gallium Zinc Oxide (InGaZnO) semiconductor is used as an active layer in a dual-gate structure to achieve high memory on-current and low memory off-current respectively. In our dual-gate oxide ferroelectric thin-film transistor (DG Ox-FeTFT), while conventional TFT characteristic is observed during bottom-gate sweeping, large hysteresis is exhibited during top-gate sweeping with high memory on-current due to the high mobility of the InGaZnO. The voltage applied to the counter bottom-gate electrode causes variations in the turn-on voltage position, which controlled the memory on- and off-current in retention characteristics. Specifically, due to the full depletion of semiconductor by the high negative counter gate bias, the memory off-current in reading operation is dramatically reduced by 104. The application of a high negative counter field to the dual-gate solution-processed ferroelectric memory gives a high memory on- and off-current ratio useful for the production of high performance multi-bit memory devices.
In flexible neuromorphic systems for realizing artificial intelligence, organic memristors are essential building blocks as artificial synapses to perform information processing and memory. Despite much effort to implement artificial neural networks (ANNs) using organic memristors, the reliability of these devices is inherently hampered by global ion transportation and arbitrary growth of conductive filaments (CFs). As a result, the performance of ANNs is restricted. Herein, a novel concept for confining CF growth in organic memristors is demonstrated by exploiting the unique functionality of crosslinkable polymers. This can be achieved by predefining the localized ion-migration path (LIP) in crosslinkable polymers. In the proposed organic memristor, metal cations are locally transported along the LIP. Thus, CF growth is achieved only in a confined region. A flexible memristor with an LIP exhibits a vastly improved reliability and uniformity, and it is capable of operating with high mechanical and electrical endurance. Moreover, neuromorphic arrays based on the proposed memristor exhibit 96.3% learning accuracy, which is comparable to the ideal software baseline. The proposed concept of predefining the LIP in organic memristors is expected to provide novel platforms for the advance of flexible electronics and to realize a variety of practical neural networks for artificial intelligence applications.
Toward the successful development of artificial intelligence, artificial synapses based on resistive switching devices are essential ingredients to perform information processing in spiking neural networks. In neural processes, synaptic plasticity related to the history of neuron activity plays a critical role during learning. In resistive switching devices, it is barely possible to emulate both short-term plasticity and long-term plasticity due to the uncontrollable dynamics of the conductive filaments (CFs). Despite extensive effort to realize synaptic plasticity in such devices, it is still challenging to achieve reliable synaptic functions due to the overgrowth of CFs in a random fashion. Herein, we propose an organic resistive switching device with bio-realistic synaptic functions by adjusting the CF diffusive parameter. In the proposed device, complete synaptic plasticity provides the history-dependent change in the conductance. Moreover, the homeostatic feedback, which resembles the biological process, regulates CF growth in our device, which enhances the reliability of synaptic plasticity. This novel concept for realizing synaptic functions in organic resistive switching devices may provide a physical platform to advance the fundamental understanding of learning and memory mechanisms and develop a variety of neural circuits and neuromorphic systems that can be linked to artificial intelligence and next-generation computing paradigm.
In this study, we investigate the bulk effect of photoresponsive gate insulators on the photoresponse of organic phototransistors (OPTs), using OPTs with poly(4-vinylphenol) layers of two different thicknesses. For the photoresponse, the interplay between the charge accumulation (capacitance) and light-absorbance capabilities of a photoresponsive gate insulator was investigated. Although an OPT with a thicker gate insulator exhibits a lower capacitance and hence a lower accumulation capability of photogenerating charges, a thicker poly(4-vinylphenol) layer, in contrast to a thinner one, absorbs more photons to generate more electron-hole pairs, resulting in a higher photoresponse of the device. That is, in these two cases, the degree of light absorption by the photoresponsive gate insulators dominantly governed the photoresponse of the device. Our physical description of the bulk effect of photoresponsive insulators on the performance of OPTs will provide a useful guideline for designing and constructing high-performance organic-based photosensing devices and systems.
In this study, we developed polymer gate insulator-based organic phototransistors (p-OPTs) with improved optical switching properties by using a hybrid gate insulator configuration. The hybrid gate insulator of our p-OPT has a photoresponsive layer made of poly(4-vinylphenol) (PVP), which enhances the photoresponse, and an interfacial layer of poly(methyl methacrylate) for reliable optical switching of the device. Our hybrid gate insulator-equipped p-OPT exhibits well-defined optical switching characteristics because no specific type of charge is significantly trapped at an interfacial layer/organic semiconductor (OSC) interface. Moreover, our device is more photoresponsive than the conventional p-OPT (here, an OPT with a single-polymer poly(methyl methacrylate) (PMMA) gate insulator), because the characteristic ultraviolet (UV) absorption of the PVP polymer allows the photoresponsive layer and OSC to contribute to the generation of charge carriers when exposed to UV light.
We demonstrated an organic and oxide hybrid CMOS inverter with the solution-processed semiconductor and source/drain electrodes. For the solution-processed n- and p-type semiconductor, InGaZnO solution and TIPS-pentacene/PαMS blend were spin-coated respectively while Silver ink and PEDOT:PSS solution were drop-casted with the help of the bank to serve as source/drain electrodes. The InGaZnO and the TIPS-pentacene transistors show typical n- and p-type transistor operations with low off-current. Based on the combination of the solution-processed n- and p-type transistors, full-swing characteristic curve with low static current of the hybrid CMOS were obtained.
We demonstrate the physical pictures of the localization of the conductive filaments (CFs) growth in flexible electrochemical metallization (ECM) memristors through an interfacial triggering (IT) into the polymer electrolyte. The IT sites (ITSs), capable of controlling the pathways of the CF growth, are formed at the electrode-polymer interfaces via the Ostwald ripening at low temperatures (below 230 °C). The injection and migration of metal ions and the resultant CF growth are found to be effectively controlled through the ITSs with the local electric field enhancement. The reliability, uniformity, and switching voltage of the device are much improved by the presence of the ITSs. Our flexible ECM memristor exhibits a high mechanical flexibility and a stable memory performance under repeated bending deformations.
We suggest a facile method to reduce the surface roughness of the ferroelectric polymer insulator to enhance the electrical performance of the ferroelectric field effect memory transistors (FeFET). Ferroelectric-dielectric mixed buffer layer was used to reduce the high surface roughness of the single layer ferroelectric polymer insulator. The FeFET with mixed buffer bilayer (BL-FeFET) showed more than 25 times higher on-current (3.40 µA) compared with single layer FeFET (130 nA). The BL-FeFET showed enhanced memory retention, higher memory on-off ratio than the conventional single layer FeFET (SL-FeFET). The enhancement of the electrical performance of the BL-FeFET can be attributed to the smoothening of the rough needle-like grain surface morphology of the ferroelectric polymer insulator in the SL-FeFET. This process of mixed buffer polymer insulator may provide a technological method for production of high-performance nonvolatile FeFET memory devices.
We presented further analysis to explain how the surface morphology influence the mobility of the organic thin film transistors with gate insulator having large undulated surface (GU-OTFTs) and introduced a new parameter in order to clearly understand the relation between surface roughness and field-effect mobility. The average of the slope between two adjacent points on the surface of a gate insulator, or effective surface smoothness (ES), was closely investigated. A smooth-contact-pressing (SCP) process affected the surface smoothness of the P(VDF-TrFE) insulator with a significant change in root-mean-square roughness (Zrms). It was found that the ES gives better explanation for the variation of the field-effect mobility of the GU-OTFTs than the Zrms.
We describe the dynamic manipulation of the charged lipids in a confined geometry where two dispersive factors arising from the random diffusion-based Brownian motion and the field-induced drift of target lipids compete with each other. It is found that the lateral distribution of the target lipids is well controlled through a combined effect of an external electric field and the geometric restrictions by the confinement. The dynamic manipulation scheme for the charged lipids in two-dimension would be useful for understanding the spatial organization of membrane components in a supported lipid membrane mimicking a real cell membrane and for producing membrane-based microarrays.
Cell Membrane/metabolism , Membrane Lipids/chemistry , Membrane Lipids/metabolism , Microarray Analysis/methods , Diffusion
OBJECTIVE: To measure radiation exposure of urologists during ureteroscopic (URS) lithotripsy, and hence estimating the number of procedures that can be performed safely considering the annually permissible radiation dose, and to identify influential variables. MATERIALS AND METHODS: The radiation exposure dose was measured at the neck, chest, arm, and hands of a single urologist who performed 49 URS lithotripsies. The number of annually performed URS lithotripsies was estimated based on the annual permissible occupational exposure radiation dose guidelines. The fluoroscopy screening time, tube voltage, and tube current were evaluated to determine their correlation with operative time, position, size, and Hounsfield unit (HU) values of the ureteral stones, and patients' body mass index (BMI). RESULTS: Our findings showed that 45 URS lithotripsies can be safely performed without a whole-body apron vs 1725 cases with one; considering the permissible dose for the hands, 448 cases without radiation protection were possible. Significant correlations were observed between operative time and fluoroscopy screening time (P < .001), ureteral calculi location and fluoroscopy screening time (P = .027), HU value and fluoroscopy screening time (P = .016), HU value and operative time (P = .041), and tube current and patients' BMI (P = .009). CONCLUSION: Considering radiation exposure risk, protective gear is necessary to ensure safety and efficacy of URS lithotripsy. Efforts to reduce radiation dose before and during surgery are required when ureteral calculi are in upper locations or have large HU, or the patient has a high BMI.
Lithotripsy/instrumentation , Occupational Exposure/prevention & control , Practice Patterns, Physicians' , Radiation Dosage , Radiation Exposure/prevention & control , Ureteral Calculi/therapy , Ureteroscopes , Urology , Adult , Aged , Female , Humans , Male , Middle Aged , Practice Guidelines as Topic , Prospective Studies , Young Adult
Nanoparticle scattering layer based on polymer-metal oxide composite is successfully introduced to enhance the light extraction efficiency of organic light emitting diodes (OLEDs). We find that the density and the distribution of nanoparticles is the key factor to maximize the light extraction efficiency of pristine OLEDs by out-coupling the unusable light with the scattering film. In our experiment, 71 wt% of Al(2)O(3) mixed with polymer matrix shows the increase of light extraction efficiency of 40%. This method is expected to play a critical role to create the low-power OLED application such as OLED lightings with simple fabrication process and low cost.
We demonstrate a vertical-type organic light-emitting transistor (VOLET) with a network electrode of closed topology for quasi-surface emission. In our VOLET, the spatial distribution of the surface emission depends primarily on the relative scale of the aperture in the network electrode to the characteristic length for the charge carrier recombination. Due to the closed topology in the network of the source electrode, the charge transport and the resultant carrier recombination are substantially extended from individual network boundaries toward the corresponding aperture centers in the source electrode. The luminance was found to be well-controlled by the gate voltage through an organic semiconducting layer over the network source electrode.
We demonstrate an array of solid-state dye-sensitized solar cells (SS-DSSCs) for a high-voltage power source based on micropatterned titanium dioxide nanoparticles (TNPs) as photoanodes connected in series. The underlying concept of patterning the TNP of a few micrometers thick lies on the combination of the lift-off process of transfer-printed patterns of a sacrificial layer and the soft-cure treatment of the TNP for fixation. This sacrificial layer approach allows for high pattern fidelity and stability, and it enables to construct stable, micrometer-thick, and contamination-free TNP patterns for developing the SS-DSSC array for miniature high-voltage applications. The array of 20 SS-DSSCs integrated in series is found to show a voltage output of around 7 V.
