Reconfigurable integrated photonic filters for optical signal processing using a silicon photonic platform.

We present a systematic photonic filter design approach by deploying pole-zero optimization. The filter transfer function is derived from its specifications by formulating closed-form optimization objective functions and subsequently translating them into optical design parameters. Two distinct filter examples, namely Chebyshev and elliptic filters, are considered for the design and validation. A compact reconfigurable three-pole photonic filter is fabricated on a silicon photonic platform to illustrate the proposed design technique including transmission tunability. Integrated thermal phase shifters coupled with micro-ring resonators are used to reconfigure filter responses. A well-matched experimental demonstration is presented to validate the proposed tuning method. We achieved a sharp out-of-band edge rejection of at least 20 and 40 dB for the elliptic and Chebyshev filter, respectively.

Si/Ge phototransistor with responsivity >1000A/W on a silicon photonics platform.

In this article, we report a Si/Ge waveguide phototransistor with high responsivity and low dark current under low bias voltages, due to an engineered electric field distribution. The photodetector consists of n-i-p-i-n doping regions and shows a responsivity of 606 A/W at 1 V bias, and 1032 A/W at 2.8V bias with an input optical power of -50 dBm, and dark current of 4 µA and 42 µA respectively. This is achieved by placing two p+-doped regions in the silicon slab region beneath the Ge epitaxial layer. A measured small signal -3 dB bandwidth of 1.5 GHz with a -80 dBc/Hz phase noise response at 1 KHz frequency offset were demonstrated experimentally.