Enriching the Deep-Red Emission in (Mg, Ba)3M2GeO8: Mn4+ (M = Al, Ga) Compositions for Light-Emitting Diodes.

Red emission from Mn4+-containing oxides inspired the development of high color rendering and cost-effective white-light-emitting diodes (WLEDs). Aiming at this fact, a series of new crystallographic site modified (Mg, Ba)3M2GeO8: Mn4+ (M = Al, Ga) compositions were developed with strong deep-red emission in the reaction to UV and blue lights. The Mg3Al2GeO8 host is composed of three phases: orthorhombic-Mg3Ga2GeO8, orthorhombic-Mg2GeO4, and cubic-MgAl2O4. However, Mg3Ga2GeO8 secured an orthorhombic crystal structure. Interestingly, Mg3Al2GeO8: Mn4+ showed a 13-fold more intense emission than Mg3Ga2GeO8: Mn4+ since Mn4+ occupancy was preferable to [AlO6] sites compared to [GaO6]. The coexisting phases of MgAl2O4 and Mg2GeO4 in Mg3Al2GeO8: Mn4+ contributed to Mn4+ luminescence by providing additional [AlO6] and [MgO6] octahedrons for Mn4+ occupancy. Further, these sites reduced the natural reduction probability of Mn4+ to Mn2+ in [AlO4] tetrahedrons, which was confirmed using cathodoluminescence analysis for the first time. A cationic substitution strategy was employed on Mg3M2GeO8: Mn4+ to improve the luminescence, and Mg3-xBaxM2GeO8: Mn4+ (M = Al, Ga) phosphors were synthesized. Partial substitution of larger Ba2+ ions in Mg2+ sites caused structural distortions and generated a new Ba impurity phase, which improved the photoluminescence. Compositionally tuned Mg2.73Ba0.27Al1.993GeO8: 0.005Mn4+ exhibited a 35-fold higher emission than that of Mg3Ga1.993GeO8: 0.005Mn4+. Additionally, this could retain 70% of its ambient emission intensity at 453 K. A warm WLED with a correlated color temperature (CCT) of 3730 K and a CRI of 89 was fabricated by combining the optimized red component with Y3Al5O12: Ce3+ and 410 nm blue LED. By tuning the ratio of blue (BaMgAl10O17: Eu2+), green (Ce0.63Tb0.37MgAl11O19), and red (Mg2.73Ba0.27Al2GeO8: 0.005Mn4+) phosphors, another WLED was developed using a 280 nm UV-LED chip. This showed natural white emission with a CRI of 79 and a CCT of 5306 K. Meanwhile, three red LEDs were also fabricated using the Mg2.73Ba0.27Al1.993GeO8: 0.005Mn4+ phosphor with commercial sources. These could be potential pc-LEDs for plant growth applications.

The elevated colour rendering of white-LEDs by microwave-synthesized red-emitting (Li, Mg)3RbGe8O18:Mn4+ nanophosphors.

The bright red emissive nature of low-cost Mn4+ ions can replace the commercially available Eu2+-doped nitrides/oxynitrides for application in white light-emitting diodes (W-LED). Herein, the Mn4+-doped Li3RbGe8O18 (LRGO) phosphor was synthesized via the solid-state reaction (SSR), microwave-assisted diffusion (MWD), and microwave-assisted sol-gel (MWS) techniques. The MWS-derived crystalline nanoparticles having sizes less than 200 nm exhibited higher red emission intensity at around 668 nm as compared to that of the micron-sized particles obtained with other approaches, owing to the improved compositional homogeneity provided by the MWS technique. The effect of microwaves was studied to gain the optimized morphology with enhanced red emission brightness. Obtained samples showed narrow red emission maxima at 668 nm under UV (300 nm) and blue (455 nm) excitations owing to 2Eg → 4A2g: Mn4+ transitions with the possibility of degeneracy. The existence of doubly degenerate forms and the splitting of 2E2g and 4A2g levels were further confirmed via low-temperature photoluminescence (PL) analysis. The emission intensity was also enhanced by the Mg2+ co-doping of MWS-derived LRGO:Mn4+ nanophosphors. Comparative photoluminescence analysis indicated that the optimized MWS route and the Mg2+ co-doping enhanced the red emission intensity by 182% as compared to the solid-state-derived LRGO:Mn4+. The optimized Mg2+ co-doped nanophosphor showed ∼99% red colour purity under UV and blue excitations. Finally, several W-LEDs were fabricated by combining the mixture of yellow-emitting YAG:Ce3+ phosphor and the optimized red-emitting LRGO:Mn4+,Mg2+ nanophosphor on a 460 nm blue-LED chip. The chromaticity of W-LEDs was tuned from bluish-white with the correlated color temperature of 6952 K, to pure white with the CCT of 5025 K. The color rendering index was also improved from 71 to 92, which could be suitable for indoor lighting applications.

Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecular-beam epitaxy.

We analyse the electrical and optical properties of single GaN nanowire p-n junctions grown by plasma-assisted molecular-beam epitaxy using magnesium and silicon as doping sources. Different junction architectures having either a n-base or a p-base structure are compared using optical and electrical analyses. Electron-beam induced current (EBIC) microscopy of the nanowires shows that in the case of a n-base p-n junction the parasitic radial growth enhanced by the magnesium (Mg) doping leads to a mixed axial-radial behaviour with strong wire-to-wire fluctuations of the junction position and shape. By reverting the doping order p-base p-n junctions with a purely axial well-defined structure and a low wire-to-wire dispersion are achieved. The good optical quality of the top n nanowire segment grown on a p-doped stem is preserved. A hole concentration in the p-doped segment exceeding 1018 cm-3 was extracted from EBIC mapping and photoluminescence analyses. This high concentration is reached without degrading the nanowire morphology.

Heat Dissipation in Flexible Nitride Nanowire Light-Emitting Diodes.

We analyze the thermal behavior of a flexible nanowire (NW) light-emitting diode (LED) operated under different injection conditions. The LED is based on metal-organic vapor-phase deposition (MOCVD)-grown self-assembled InGaN/GaN NWs in a polydimethylsiloxane (PDMS) matrix. Despite the poor thermal conductivity of the polymer, active nitride NWs effectively dissipate heat to the substrate. Therefore, the flexible LED mounted on a copper heat sink can operate under high injection without significant overheating, while the device mounted on a plastic holder showed a 25% higher temperature for the same injected current. The efficiency of the heat dissipation by nitride NWs was further confirmed with finite-element modeling of the temperature distribution in a NW/polymer composite membrane.

Local Structure and Spectroscopic Properties of Eu3+-Doped BaZrO3.

Pristine and Eu3+-doped BaZrO3 were synthesized via a solid-state reaction method, and the synthesized samples were systematically characterized. X-ray diffraction confirmed the formation of single and pure phases of cubic-structured BaZrO3. Extended X-ray absorption fine structure (EXAFS) spectroscopy revealed the site occupancy of Eu3+ and coordination environment around the different atomic sites. Photoluminescence (PL) excitation and emission spectra revealed the dominant absorption at 275 nm and a broad emission centered at 400 nm due to oxygen vacancies below the conduction band (CB). The PL emission intensity at 597 nm increased with increasing Eu3+ doping concentration; simultaneously, emission from the defect level decreased. This confirmed the efficient energy transfer from oxygen vacancies to Eu3+. Density functional theory was employed to calculate the density of states (DOS) to explain the mechanisms of the PL phenomenon. DOS also showed the presence of impurity states due to Eu3+ doping within the band-gap region. The coincidence of the oxygen vacancy state with Eu f state at the bottom of the CB confirmed the PL energy-transfer mechanisms from the oxygen vacancy to europium. The excited-state lifetime values of the 5D0 state decreased with increasing doping concentration due to the increase of the nonradiative transition rate. The internal quantum efficiency, small excited-state lifetime, and photometric parameters indicated that 3 mol % Eu3+-doped BaZrO3 can be a suitable candidate for the red-light-emitting device applications.