RESUMEN
InZnP:Ag nano-rods fabricated by the ion milling method were thermally annealed in the 250~350 °C temperature range and investigated the optimum thermal annealing conditions to further understand the mutual correlation between the optical properties and the microscopic magnetic properties. The formation of InZnP:Ag nano-rods was determined from transmission electron microscopy (TEM), total reflectivity and Raman scattering analyses. The downward shifts of peak position for LO and TO modes in the Raman spectrum are indicative of the production of Ag ion-induced strain during the annealing process of the InZnP:Ag nano-rod samples. The appearance of two emission peaks of both (A0 X) and (e, Ag) in the PL spectrum indicated that acceptor states by Ag diffusion are visible due to the effective incorporation of Ag-creating acceptor states. The binding energy between the acceptor and the exciton measured as a function of temperature was found to be 21.2 meV for the sample annealed at 300 °C. The noticeable MFM image contrast and the clear change in the MFM phase with the scanning distance indicate the formation of the ferromagnetic spin coupling interaction on the surface of InZnP:Ag nano-rods by Ag diffusion. This study suggests that the InZnP:Ag nano-rods should be a potential candidate for the application of spintronic devices.
RESUMEN
Polarization-sensitive photodetection has attracted considerable attention as an emerging technology for future optoelectronic applications such as three-dimensional (3D) imaging, quantum optics, and encryption. However, traditional photodetectors based on Si or III-V InGaAs semiconductors cannot directly detect polarized light without additional optical components. Herein, we demonstrate a self-powered linear-polarization-sensitive near-infrared (NIR) photodetector using a two-dimensional WSe2/ReSe2 van der Waals heterostructure. The WSe2/ReSe2 heterojunction photodiode with semivertical geometry exhibits excellent performance: an ideality factor of 1.67, a broad spectral photoresponse of 405-980 nm with a significant photovoltaic effect, outstanding linearity with a linear dynamic range wider than 100 dB, and rapid photoswitching behavior with a cutoff frequency up to 100 kHz. Strongly polarized excitonic transitions around the band edge in ReSe2 lead to significant 980 nm NIR linear-polarization-dependent photocurrent. This linear polarization sensitivity remains stable even after exposure to air for longer than five months. Furthermore, by leveraging the NIR (980 nm)-selective linear polarization detection of this photodiode under photovoltaic operation, we demonstrate digital incoherent holographic 3D imaging.
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Here, excitation orthogonalized red/green/blue upconversion luminescence (UCL)-based full-color tunable rare-earth (RE) ion-doped upconversion nanophosphors (UCNPs) are reported. The LiREF4-based core/sextuple-shell (C/6S) UCNPs are synthesized, and they consist of a blue-emitting core, green-emitting inner shell, and red-emitting outer shell, with inert intermediate and outermost shells. The synthesized C/6S UCNPs emit blue, green, and red light under 980, 800, and 1532 nm, respectively. Importantly, by combining incident near-infrared (NIR) light with various wavelengths (800, 980, and 1532 nm), full-color UCL including blue, cyan, green, yellow, orange, red, purple, and white UCL is achieved from the single C/6S UCNP composition. The color gamut obtained from the C/6S UCNPs shows 101.6% of the sRGB standard color gamut. Furthermore, transparent C/6S UCNP-polydimethylsiloxane (PDMS) composite is prepared. Full-color display realized in the transparent C/6S UCNP-PDMS composite indicates the feasibility of constructing the C/6S UCNP-based three-dimensional volumetric displays with wide color gamut.
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We report the growth mechanism and optical characteristics of type-II band-aligned GaSb quantum dots (QDs) grown on GaAs using a droplet epitaxy-driven nanowire formation mechanism with molecular beam epitaxy. Using transmission electron microscopy and scanning electron microscopy images, we confirmed that the QDs, which comprised zinc-blende crystal structures with hexagonal shapes, were successfully grown through the formation of a nanowire from a Ga droplet, with reduced strain between GaAs and GaSb. Photoluminescence (PL) peaks of GaSb capped by a GaAs layer were observed at 1.11 eV, 1.26 eV, and 1.47 eV, assigned to the QDs, a wetting-like layer (WLL), and bulk GaAs, respectively, at the measurement temperature of 14 K and excitation laser power of 30 mW. The integrated PL intensity of the QDs was significantly stronger than that of the WLL, which indicated well-grown GaSb QDs on GaAs and the generation of an interlayer exciton, as shown in the power- and temperature-dependent PL spectra, respectively. In addition, time-resolved PL data showed that the GaSb QD and GaAs layers formed a self-aligned type-II band alignment; the temperature-dependent PL data exhibited a high equivalent internal quantum efficiency of 15 ± 0.2%.
RESUMEN
We report the fabrication of quantum dot infrared photodetectors (QDIPs) on silicon (Si) substrates by means of metal wafer bonding and an epitaxial lift-off process. According to the photoluminescence (PL) and x-ray diffraction measurements, the QDIP layer was transferred onto the Si substrate without degradation of the crystal quality or residual strain. In addition, from the PL results, we found that an optical cavity was formed because Pt/Au of the bonding material was served as the back mirror and the facet of the GaAs/air was served as the front mirror. The device performance capabilities were directly compared and peak responsivity was enhanced by nearly twofold from 0.038 A/W to 0.067 A/W.
RESUMEN
Acoustic wave devices provide a promising chip-scale platform for efficiently coupling radio frequency (RF) and optical fields. Here, we use an integrated piezo-optomechanical circuit platform that exploits both the piezoelectric and photoelastic coupling mechanisms to link 2.4 GHz RF waves to 194 THz (1550 nm) optical waves, through coupling to propagating and localized 2.4 GHz acoustic waves. We demonstrate acousto-optic modulation, resonant in both the optical and mechanical domains, in which waveforms encoded on the RF carrier are mapped to the optical field. We also show opto-acoustic gating, in which the application of modulated optical pulses interferometrically gates the transmission of propagating acoustic pulses. The time-domain characteristics of this system under both pulsed RF and pulsed optical excitation are considered in the context of the different physical pathways involved in driving the acoustic waves, and modelled through the coupled mode equations of cavity optomechanics.
RESUMEN
The Aharonov-Bohm effect in ring structures in the presence of electronic correlation and disorder is an open issue. We report novel oscillations of a strongly correlated exciton pair, similar to a Wigner molecule, in a single nanoquantum ring, where the emission energy changes abruptly at the transition magnetic field with a fractional oscillation period compared to that of the exciton, a so-called fractional optical Aharonov-Bohm oscillation. We have also observed modulated optical Aharonov-Bohm oscillations of an electron-hole pair and an anticrossing of the photoluminescence spectrum at the transition magnetic field, which are associated with disorder effects such as localization, built-in electric field, and impurities.
RESUMEN
We report fabrication and optical characteristics of an InGaP/GaAs heterojunction phototransistor (HPT) transferred to a Si substrate by a metal wafer bonding (MWB) and epitaxial lift-off (ELO) process at room temperature. An intermediate Pt/Au double layer between the HPT layer and Si provided a very smooth surface by which to achieve the MWB, and excellent durability against the acid solution during the ELO process. These processes were observed using scanning electron microscope (SEM) and atomic force microscopy (AFM). While the results on a low temperature photoluminescence (LTPL) signal and high resolution x-ray diffraction (HRXRD) rocking curve of the bonded device film implied a defect-free bonding, a very low collector dark current of the fabricated HPT was observed. The optical performance of a bonded InGaP/GaAs HPT on Si, operating at 635 nm wavelength is also investigated.
