Scaling issues in ferroelectric barium strontium titanate tunable planar capacitors.

We report on the geometric limits associated with tunability of interdigitated capacitors, specifically regarding the impact of a parasitic non-tunable component that necessarily accompanies a ferroelectric surface capacitor, and can dominate the voltage-dependent response as capacitor dimensions are reduced to achieve the small capacitance values required for impedance matching in the X band. We present a case study of simple gap capacitors prepared and characterized as a function of gap width (i.e., the distance between electrodes) and gap length (i.e., the edge-to-edge gap distance). Our series of measurements reveals that for gap widths in the micrometer range, as gap lengths are reduced to meet sub-picofarad capacitance values, the non-tunable parasitic elements limit the effective tunability. These experimental measurements are supported by a companion set of microwave models that clarify the existence of parallel parasitic elements.

The impact of metallization thickness and geometry for X-band tunable microwave filters.

The impact of dc resistance on the performance of X-band filters with ferroelectric varactors was investigated. Two series of combline bandpass filters with specific geometries to isolate sources of conductor losses were designed and synthesized. Combining the changes in filter geometry with microwave measurements and planar filter solver (Sonnet software) simulations quantitatively identified the dependency of insertion loss on overall metallization thickness and local regions of thin metallization. The optimized 8-GHz bandpass filters exhibited insertion losses of 6.8 dB. These filters required 2.5 microm of metal thickness (or 3 effective skin depths) to achieve this loss. The trend of loss with thickness indicates diminishing return with additional metal. The integration scheme requires thin regions of metal in the immediate vicinity of the varactors. It is shown through experiment and simulation that short distances (i.e., 15 microm) of thin metallization can be tolerated provided that they are located in regions where the resonant microwave current is low.

Tunable instability mechanisms of polymer thin films by molecular self-assembly.

Incorporation of a block copolymer into a thin polymer film is observed to alter both the rate and mechanism by which the film dewets from an immiscible polymer substrate. Films with little or no copolymer dewet by classical nucleation and growth of circular holes, and the dewetting rate decreases with increasing copolymer concentration. Increasing the copolymer content at constant film thickness generates copolymer micelles that adsorb/aggregate along the polymer/polymer interface and promote nonclassical dewetting fluctuations similar in appearance to spinodal dewetting. At higher copolymer concentrations, dewetting proceeds after a lengthy induction period by the nucleation and growth of flower-shaped holes suggestive of film pinning or viscous fingering. Atomic force microscopy of the polymer/polymer interface after removal of the top film by selective dissolution reveals substantial structural development due to copolymer self-assembly.