Hybrid Organic-Si C-MOSFET Image Sensor Designed with Blue-, Green-, and Red-Sensitive Organic Photodiodes on Si C-MOSFET-Based Photo Signal Sensor Circuit.

The resolution of Si complementary metal-oxide-semiconductor field-effect transistor (C-MOSFET) image sensors (CISs) has been intensively enhanced to follow the technological revolution of smartphones, AI devices, autonomous cars, robots, and drones, approaching the physical and material limits of a resolution increase in conventional Si CISs because of the low quantum efficiency (i.e., ~40%) and aperture ratio (i.e., ~60%). As a novel solution, a hybrid organic-Si image sensor was developed by implementing B, G, and R organic photodiodes on four n-MOSFETs for photocurrent sensing. Photosensitive organic donor and acceptor materials were designed with cost-effective small molecules, i.e., the B, G, and R donor and acceptor small molecules were Coumarin6 and C_60, DMQA and MePTC, and ZnPc and TiOPc, respectively. The output voltage sensing margins (i.e., photocurrent signal difference) of the hybrid organic-Si B, G, and R image sensor pixels presented results 17, 11, and 37% higher than those of conventional Si CISs. In addition, the hybrid organic-Si B, G, and R image sensor pixels could achieve an ideal aperture ratio (i.e., ~100%) compared with a Si CIS pixel using the backside illumination process (i.e., ~60%). Moreover, they may display a lower fabrication cost than image sensors because of the simple image sensor structure (i.e., hybrid organic-Si photodiode with four n-MOSFETs).

Fumed Silica-Based Ultra-High-Purity Synthetic Quartz Powder via Sol-Gel Process for Advanced Semiconductor Process beyond Design Rule of 3 nm.

Fumed silica-based ultra-high-purity synthetic quartz powder was developed via the sol-gel process to apply to quartz wares and quartz crucibles for use in advanced semiconductor processes. The process conditions of preparing potassium silicate solution, gelation, and cleaning were optimized, i.e., the relative ratio of fumed silica (10 wt%) to KOH (4 wt%) for potassium silicate solution, gelation time 3 h, and cleaning for 1 h with 5 wt% HCl solution. It was observed that the gelation time strongly affected the size distribution of the quartz powder; i.e., a longer gelation time led to a larger size (d50) of the synthesized quartz powder: 157 µm for 2 h and 331 µm for 5 h. In particular, it was found that the morphology of the as-synthesized quartz powder greatly depended on the pulverizing process; i.e., the shape of quartz powder was shown to be rod-shaped for the without-gel-pulverizing process and granular-shaped with the process. We expect that the fumed silica-based ultra-high-purity quartz powder with an impurity level of 74.1 ppb synthesized via the sol-gel process is applicable as a raw material for quartz wares and crucibles for advanced semiconductor processes beyond the design rule of 3 nm.