RESUMEN
Spatially resolved photoluminescence at the sub-micro scale was used to study the optical non-uniformity of the micro-LED under varied power density excitation levels. The trend of the efficiency along injection levels were found to be highly dependent on the location of the chip mesa. The sidewall was 80% lower than the center under low-power density excitation, but was 50% higher under high-power density excitation. The external quantum efficiency droop at the center and the sidewall was 86% and 52%, respectively. A 2 µm band area near the sidewall was characterized where the efficiency and its trends changed rapidly. Beyond such band, the full width at half maximum and peak wavelength variation across the chip varied less than 1 nm, indicating high uniformity of the material composition. The sudden change = in the band, especially under high level excitation indicates the indium composition change formed by ion residues on the sidewall affect the distribution of charge carriers. These findings contribute to the understanding of cause of efficiency disadvantage and non-uniformity problems in small-size micro-LEDs.
RESUMEN
The differences in spatially optical properties between blue and green quantum wells (QWs) in a monolithic dual-wavelength semipolar (20-21) structure were investigated by scanning near-field optical microscopy (SNOM). The shortest wavelength for green QWs and the longest wavelength for blue QWs were both discovered in the region with the largest stress. It demonstrated that In composition, compared to stress, plays a negligible role in defining the peak wavelength for blue QWs, while for green QWs, In composition strongly affects the peak wavelength. For green QWs, significant photoluminescence enhancement was observed in the defect-free region, which was not found for blue QWs. Furthermore, the efficiency droop was aggravated in the defect-free region for green QWs but reduced for blue QWs. It indicates that carrier delocalization plays a more important role in the efficiency droop for QWs of good crystalline quality, which is experimentally pointed out for the first time.
RESUMEN
The microcave array with extreme large aspect ratio was fabricated on the p-GaN capping layer followed by Ag nanoparticles preparation. The coupling distance between the dual-wavelength InGaN/GaN multiple quantum wells and the localized surface plasmon resonance was carefully characterized in nanometer scale by scanning near-field optical microscopy. The effects of coupling distance and excitation power on the enhancement of photoluminescence were investigated. The penetration depth was measured in the range of 39-55 nm depending on the excitation density. At low excitation power density, the maximum enhancement of 103 was achieved at the optimum coupling distance of 25 nm. Time-resolved photoluminescence shows that the recombination life time was shortened from 5.86 to 1.47 ns by the introduction of Ag nanoparticle plasmon resonance.
RESUMEN
To reduce the threshold and achieve unidirectional lasing emission in a whispering gallery mode microcavity, we propose and demonstrate a GaN-based eccentric microring with an inner hole located off the center. Compared to microdisk with the same outer diameter, the eccentric microring structure exhibits a remarkable reduction of lasing threshold by up to 53%. The introduction of the hole disturbs and eventually suppresses the field distribution of the higher order modes. Laser emission with high unidirectionality with a far-field divergence angle of about 40° has been achieved, meanwhile the Q factor of the whispering gallery modesis remains high as 6388. Finite-difference time-domain numerical simulation is carried out to prove that the far-field profile of the eccentric microring structure can be controlled by the position and the size of the hole. The properties of the whispering gallery mode microcavities are improved greatly through a simple structure and process, which has an important guiding significance to the research and development of the microcavity lasers.
RESUMEN
The size of the V-defects in the GaN/InGaN-based quantum wells blue light-emitting diode (LED) was intentionally modified from 50 nm to 300 nm. High resolution photoluminescence and electroluminescence of a single large V-defect were investigated by near-field scanning optical microscopy. The current distribution along the {10-11} facets of the large defect was measured by conductive atomic force microscopy. Nearly 20 times the current injection and dominant emission from bottom quantum wells were found in the V-defect compared to its vicinity. Such enhanced current injection into the bottom part of quantum wells through V-defect results in higher light output power. Reduced external quantum efficiency droops were achieved due to more uniform carrier distribution. The un-encapsulated fabricated chip shows light output power of 172.5 mW and 201.7 mW at 400 mA, and external quantum efficiency drop of 22.3% and 15.4% for the sample without and with large V-defects, respectively. Modified V-defects provide a simple and eï¬ective approach to suppress the efficiency droop problem that occurs at high current injection, while improving overall quantum efficiency.
RESUMEN
The asymmetric unit of the title compound, C(12)H(9)F(2)N(3)O, contains two independent mol-ecules (A and B) in which the benzene and cyclo-propane rings form dihedral angles of 33.0â (1) and 29.7â (1)°, respectively. In the crystal, weak inter-molecular C-Hâ¯O hydrogen bonds link alternating A and B mol-ecules into chains along [010].
