Wafer-Scale Fabrication of Wearable All-Carbon Nanotube Photodetector Arrays.

With electronic devices evolving toward portable and high-performance wearables, the constraints of complex and wet processing technologies become apparent. This study presents a scalable photolithography/chemical-free method for crafting wearable all-carbon nanotube (CNT) photodetector device arrays. Laser-assisted patterning and dry deposition techniques directly assemble gas-phase CNTs into flexible devices without any lithography or lift-off processes. The resulting wafer-scale all-CNT photodetector arrays showcase excellent uniformity, wearability, environmental stability, and notable broadband photoresponse, boasting a high responsivity of 44 AW-1 and a simultaneous detectivity of 1.9 × 109 Jones. This research provides an efficient, versatile, and scalable strategy for manufacturing wearable all-CNT device arrays, allowing widespread adoption in wearable optoelectronics and multifunctional sensors.

Broadening spectral responses and achieving environmental stability in SnS2/Ag-NPs/HfO2 flexible phototransistors.

Layered two-dimensional (2D) materials have gained popularity thanks to their atomically thin physique and strong coupling with light. Here, we investigated a wide band gap (≥ 2 eV) 2D material, i.e., tin disulfide (SnS2), and decorated it with silver nanoparticles, Ag-NPs, for broadband photodetection. Our results show that the SnS2/Ag-NPs devices exhibit broadband photodetection ranging from the ultraviolet to near-infrared (250-1050 nm) spectrum with decreased rise/decay times from 8/20 s to 7/16 s under 250 nm wavelength light compared to the bare SnS2 device. This is attributed to the localized surface plasmon resonance effect and the wide band gap of SnS2 crystal. Furthermore, the HfO2-passivated SnS2/Ag-NPs devices exhibited high photodetection performance in terms of photoresponsivity (∼12 500 A W-1), and external quantum efficiency (∼6 × 106%), which are significantly higher compared to those of bare SnS2. Importantly, after HfO2 passivation, the SnS2/Ag-NPs photodetector maintained the stable performance for several weeks with merely ∼5.7% reduction in photoresponsivity. Lastly, we fabricated a flexible SnS2/Ag-NPs photodetector, which shows excellent and stable performance under various bending curvatures (0, 20, and 10 mm), as it retains ∼80% of its photoresponsivity up to 500 bending cycles. Thus, our study provides a simple route to realize broadband and stable photoactivity in flexible 2D material-based devices.

Broadband miniaturized spectrometers with a van der Waals tunnel diode.

Miniaturized spectrometers are of immense interest for various on-chip and implantable photonic and optoelectronic applications. State-of-the-art conventional spectrometer designs rely heavily on bulky dispersive components (such as gratings, photodetector arrays, and interferometric optics) to capture different input spectral components that increase their integration complexity. Here, we report a high-performance broadband spectrometer based on a simple and compact van der Waals heterostructure diode, leveraging a careful selection of active van der Waals materials- molybdenum disulfide and black phosphorus, their electrically tunable photoresponse, and advanced computational algorithms for spectral reconstruction. We achieve remarkably high peak wavelength accuracy of ~2 nanometers, and broad operation bandwidth spanning from ~500 to 1600 nanometers in a device with a ~ 30×20 µm2 footprint. This diode-based spectrometer scheme with broadband operation offers an attractive pathway for various applications, such as sensing, surveillance and spectral imaging.

Monolithic Saturable Absorber with Gallium Arsenide Nanowires Integrated on the Flexible Substrate for Optical Pulse Generation.

In this work, we demonstrated a kind of flexibly monolithic saturable absorber (SA) with GaAs nanowires (NWs) on polyimide (PI) plastic substrate for broadband optical modulation at 1.0 and 1.5 µm, separately. The monolithic SA sample was prepared by the metalorganic vapor phase epitaxy (MOVPE) method. The crystal structure and element analysis were examined carefully by high-resolution scanning transmission electron microscopy (HRSTEM) and energy-dispersive X-ray spectroscopy (EDX). We observed a high-density distribution of NWs on the flexible substrate by scanning electron microscopy (SEM). In addition, linear and nonlinear optical properties of the sample were examined by testing the photoluminescence and absorption properties, which showed its potential application as an optical switch due to the pure semiconducting properties. After the characterizations, we experimentally demonstrated this monolithic SA for laser modulation at 1.0 and 1.5 µm, which yielded the minimum optical pulse widths of 1.531 and 6.232 µs, respectively. Our work demonstrated such a kind of monolithic flexible NW substrate-integrated device used for broadband optical modulation, which not only eased the integration process of NWs onto the fiber endface, but also proved the potential of easily integrating with more semiconducting nanomaterials (e.g., graphene, MoS2, …) to realize monolithic active flexible photonic systems, such as a microscale phase modulator, delay-line, and so on, paving an easy avenue for the development of both active and flexible photonic devices.

Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field-Effect Transistors.

Molybdenum ditelluride (MoTe2 ) exhibits immense potential in post-silicon electronics due to its bandgap comparable to silicon. Unlike other 2D materials, MoTe2 allows easy phase modulation and efficient carrier type control in electrical transport. However, its unstable nature and low-carrier mobility limit practical implementation in devices. Here, a deterministic method is proposed to improve the performance of MoTe2 devices by inducing local tensile strain through substrate engineering and encapsulation processes. The approach involves creating hole arrays in the substrate and using atomic layer deposition grown Al2 O3 as an additional back-gate dielectric layer on SiO2 . The MoTe2 channel is passivated with a thick layer of Al2 O3 post-fabrication. This structure significantly improves hole and electron mobilities in MoTe2 field-effect transistors (FETs), approaching theoretical limits. Hole mobility up to 130 cm-2  V-1 s-1 and electron mobility up to 160 cm-2  V-1 s-1 are achieved. Introducing local tensile strain through the hole array enhances electron mobility by up to 6 times compared to the unstrained devices. Remarkably, the devices exhibit metal-insulator transition in MoTe2 FETs, with a well-defined critical point. This study presents a novel technique to enhance carrier mobility in MoTe2 FETs, offering promising prospects for improving 2D material performance in electronic applications.

Unraveling Thermal Transport Properties of MoTe2 Thin Films Using the Optothermal Raman Technique.

Understanding phonon transport and thermal conductivity of layered materials is not only critical for thermal management and thermoelectric energy conversion but also essential for developing future optoelectronic devices. Optothermal Raman characterization has been a key method to identify the properties of layered materials, especially transition-metal dichalcogenides. This work investigates the thermal properties of suspended and supported MoTe2 thin films using the optothermal Raman technique. We also report the investigation of the interfacial thermal conductance between the MoTe2 crystal and the silicon substrate. To extract the thermal conductivity of the samples, temperature- and power-dependent measurements of the in-plane E2g1 and out-of-plane A1g optical phonon modes were performed. The results show remarkably low in-plane thermal conductivities at room temperature, at around 5.16 ± 0.24 W/m·K and 3.72 ± 0.26 W/m·K for the E2g1 and the A1g modes, respectively, for the 17 nm thick sample. These results provide valuable input for the design of electronic and thermal MoTe2-based devices where thermal management is vital.

Highly Sensitive MoS2 Photodetectors Enabled with a Dry-Transferred Transparent Carbon Nanotube Electrode.

Fabricating electronic and optoelectronic devices by transferring pre-deposited metal electrodes has attracted considerable attention, owing to the improved device performance. However, the pre-deposited metal electrode typically involves complex fabrication procedures. Here, we introduce our facile electrode fabrication process which is free of lithography, lift-off, and reactive ion etching by directly press-transferring a single-walled carbon nanotube (SWCNT) film. We fabricated Schottky diodes for photodetector applications using dry-transferred SWCNT films as the transparent electrode to increase light absorption in photoactive MoS2 channels. The MoS2 flake vertically stacked with an SWCNT electrode can exhibit excellent photodetection performance with a responsivity of ∼2.01 × 103 A/W and a detectivity of ∼3.2 × 1012 Jones. Additionally, we carried out temperature-dependent current-voltage measurement and Fowler-Nordheim (FN) plot analysis to explore the dominant charge transport mechanism. The enhanced photodetection in the vertical configuration is found to be attributed to the FN tunneling and internal photoemission of charge carriers excited from indium tin oxide across the MoS2 layer. Our study provides a novel concept of using a photoactive MoS2 layer as a tunneling layer itself with a dry-transferred transparent SWCNT electrode for high-performance and energy-efficient optoelectronic devices.

Miniaturized spectrometers with a tunable van der Waals junction.

Miniaturized computational spectrometers, which can obtain incident spectra using a combination of device spectral responses and reconstruction algorithms, are essential for on-chip and implantable applications. Highly sensitive spectral measurement using a single detector allows the footprints of such spectrometers to be scaled down while achieving spectral resolution approaching that of benchtop systems. We report a high-performance computational spectrometer based on a single van der Waals junction with an electrically tunable transport-mediated spectral response. We achieve high peak wavelength accuracy (∼0.36 nanometers), high spectral resolution (∼3 nanometers), broad operation bandwidth (from ∼405 to 845 nanometers), and proof-of-concept spectral imaging. Our approach provides a route toward ultraminiaturization and offers unprecedented performance in accuracy, resolution, and operation bandwidth for single-detector computational spectrometers.

Optical Control of High-Harmonic Generation at the Atomic Thickness.

High-harmonic generation (HHG), an extreme nonlinear optical phenomenon beyond the perturbation regime, is of great significance for various potential applications, such as high-energy ultrashort pulse generation with outstanding spatiotemporal coherence. However, efficient active control of HHG is still challenging due to the weak light-matter interaction displayed by currently known materials. Here, we demonstrate optically controlled HHG in monolayer semiconductors via the engineering of interband polarization. We find that HHG can be efficiently controlled in the excitonic spectral region with modulation depths up to 95% and ultrafast response speeds of several picoseconds. Quantitative time-domain theory of the nonlinear optical susceptibilities in monolayer semiconductors further corroborates these experimental observations. Our demonstration not only offers an in-depth understanding of HHG but also provides an effective approach toward active optical devices for strong-field physics and extreme nonlinear optics.

A Universal Pick-and-Place Assembly for Nanowires.

With the introduction of techniques to grow highly functional nanowires of exotic materials and demonstrations of their potential in new applications, techniques for depositing nanowires on functional platforms have been an area of active interest. However, difficulties in handling individual nanowires with high accuracy and reliability have so far been a limiting factor in large-scale integration of high-quality nanowires. Here, a technique is demonstrated to transfer single nanowires reliably on virtually any platform, under ambient conditions. Functional nanowires of InP, AlGaAs, and GeTe on various patterned structures such as electrodes, nanophotonic devices, and even ultrathin transmission electron microscopy (TEM) membranes are transferred. It is shown that the versatility of this technique further enables to perform on-chip nano-optomechanical measurements of an InP nanowire for the first time via evanescent field coupling. Thus, this technique facilitates effortless integration of single nanowires into applications that were previously seen as cumbersome or even impractical, spanning a wide range from TEM studies to in situ electrical, optical, and mechanical characterization.

Inducing Strong Light-Matter Coupling and Optical Anisotropy in Monolayer MoS2 with High Refractive Index Nanowire.

Mixed-dimensional heterostructures combine the merits of materials of different dimensions; therefore, they represent an advantageous scenario for numerous technological advances. Such an approach can be exploited to tune the physical properties of two-dimensional (2D) layered materials to create unprecedented possibilities for anisotropic and high-performance photonic and optoelectronic devices. Here, we report a new strategy to engineer the light-matter interaction and symmetry of monolayer MoS2 by integrating it with one-dimensional (1D) AlGaAs nanowire (NW). Our results show that the photoluminescence (PL) intensity of MoS2 increases strongly in the mixed-dimensional structure because of electromagnetic field confinement in the 1D high refractive index semiconducting NW. Interestingly, the 1D NW breaks the 3-fold rotational symmetry of MoS2, which leads to a strong optical anisotropy of up to ∼60%. Our mixed-dimensional heterostructure-based phototransistors benefit from this and exhibit an improved optoelectronic device performance with marked anisotropic photoresponse behavior. Compared with bare MoS2 devices, our MoS2/NW devices show ∼5 times enhanced detectivity and ∼3 times higher photoresponsivity. Our results of engineering light-matter interaction and symmetry breaking provide a simple route to induce enhanced and anisotropic functionalities in 2D materials.

Engineering the Dipole Orientation and Symmetry Breaking with Mixed-Dimensional Heterostructures.

Engineering of the dipole and the symmetry of materials plays an important role in fundamental research and technical applications. Here, a novel morphological manipulation strategy to engineer the dipole orientation and symmetry of 2D layered materials by integrating them with 1D nanowires (NWs) is reported. This 2D InSe -1D AlGaAs NW heterostructure example shows that the in-plane dipole moments in InSe can be engineered in the mixed-dimensional heterostructure to significantly enhance linear and nonlinear optical responses (e.g., photoluminescence, Raman, and second harmonic generation) with an enhancement factor of up to ≈12. Further, the 1D NW can break the threefold rotational symmetry of 2D InSe, leading to a strong optical anisotropy of up to ≈65%. These results of engineering dipole orientation and symmetry breaking with the mixed-dimensional heterostructures open a new path for photonic and optoelectronic applications.

Probing Electronic States in Monolayer Semiconductors through Static and Transient Third-Harmonic Spectroscopies.

Electronic states and their dynamics are of critical importance for electronic and optoelectronic applications. Here, various relevant electronic states in monolayer MoS2 , such as multiple excitonic Rydberg states and free-particle energy bands are probed with a high relative contrast of up to ≥200 via broadband (from ≈1.79 to 3.10 eV) static third-harmonic spectroscopy (THS), which is further supported by theoretical calculations. Moreover, transient THS is introduced to demonstrate that third-harmonic generation can be all-optically modulated with a modulation depth exceeding ≈94% at ≈2.18 eV, providing direct evidence of dominant carrier relaxation processes associated with carrier-exciton and carrier-phonon interactions. The results indicate that static and transient THS are not only promising techniques for the characterization of monolayer semiconductors and their heterostructures, but also a potential platform for disruptive photonic and optoelectronic applications, including all-optical modulation and imaging.

Tunable Quantum Tunneling through a Graphene/Bi2Se3 Heterointerface for the Hybrid Photodetection Mechanism.

Graphene-based van der Waals heterostructures are promising building blocks for broadband photodetection because of the gapless nature of graphene. However, their performance is mostly limited by the inevitable trade-off between low dark current and photocurrent generation. Here, we demonstrate a hybrid photodetection mode based on the photogating effect coupled with the photovoltaic effect via tunable quantum tunneling through the unique graphene/Bi2Se3 heterointerface. The tunneling junction formed between the semimetallic graphene and the topologically insulating Bi2Se3 exhibits asymmetric rectifying and hysteretic current-voltage characteristics, which significantly suppresses the dark current and enhances the photocurrent. The photocurrent-to-dark current ratio increases by about a factor of 10 with the electrical tuning of tunneling resistance for efficient light detection covering the major photonic spectral band from the visible to the mid-infrared ranges. Our findings provide a novel concept of using tunable quantum tunneling for highly sensitive broadband photodetection in mixed-dimensional van der Waals heterostructures.

Grass-like alumina coated window harnesses the full omnidirectional potential of black silicon photodiodes.

Packaged photodiodes suffer from Fresnel reflection from the package window glass, especially at high angles of incidence. This has a notable impact particularly on black silicon (b-Si) photodiodes, which have extreme sensitivity. In this work, we show that by adding a simple grass-like alumina antireflection (AR) coating on the window glass, excellent omnidirectional sensitivity and high external quantum efficiency (EQE) of b-Si photodiodes can be retained. We demonstrate that EQE increases at all angles, and up to 15% absolute increases in EQE at a 70° angle of incidence compared to conventional uncoated glass. Furthermore, even at the incidence angle of 50°, the double-sided coating provides higher EQE than bare glass at normal incidence. Our results demonstrate that grass-like alumina coatings are efficient and omnidirectional AR coatings for photodiode package windows in a wide wavelength range across the visible spectrum to near-infrared radiation.

Enhanced terahertz emission from mushroom-shaped InAs nanowire network induced by linear and nonlinear optical effects.

The development of powerful terahertz (THz) emitters is the cornerstone for future THz applications, such as communication, medical biology, non-destructive inspection, and scientific research. Here, we report the THz emission properties and mechanisms of mushroom-shaped InAs nanowire (NW) network using linearly polarized laser excitation. By investigating the dependence of THz signal to the incidence pump light properties (e.g. incident angle, direction, fluence, and polarization angle), we conclude that the THz wave emission from the InAs NW network is induced by the combination of linear and nonlinear optical effects. The former is a transient photocurrent accelerated by the photo-Dember field, while the latter is related to the resonant optical rectification effect. Moreover, thep-polarized THz wave emission component is governed by the linear optical effect with a proportion of ∼85% and the nonlinear optical effect of ∼15%. In comparison, thes-polarized THz wave emission component is mainly decided by the nonlinear optical effect. The THz emission is speculated to be enhanced by the localized surface plasmon resonance absorption of the In droplets on top of the NWs. This work verifies the nonlinear optical mechanism in the THz generation of semiconductor NWs and provides an enlightening reference for the structural design of powerful and flexible THz surface and interface emitters in transmission geometry.

Tuning of Emission Wavelength of CaS:Eu by Addition of Oxygen Using Atomic Layer Deposition.

Atomic layer deposition (ALD) technology has unlocked new ways of manipulating the growth of inorganic materials. The fine control at the atomic level allowed by ALD technology creates the perfect conditions for the inclusion of new cationic or anionic elements of the already-known materials. Consequently, novel material characteristics may arise with new functions for applications. This is especially relevant for inorganic luminescent materials where slight changes in the vicinity of the luminescent centers may originate new emission properties. Here, we studied the luminescent properties of CaS:Eu by introducing europium with oxygen ions by ALD, resulting in a novel CaS:EuO thin film. We study structural and photoluminescent properties of two different ALD deposited Eu doped CaS thin films: Eu(thd)3 which reacted with H2S forming CaS:Eu phosphor, or with O3 originating a CaS:EuO phosphor. It was found that the emission wavelength of CaS:EuO was 625.8 nm whereas CaS:Eu was 647 nm. Thus, the inclusion of O2- ions by ALD in a CaS:Eu phosphor results in the blue-shift of 21.2 nm. Our results show that ALD can be an effective way to introduce additional elements (e.g., anionic elements) to engineer the physical properties (e.g., inorganic phosphor emissions) for photonics and optoelectronics.

Giant All-Optical Modulation of Second-Harmonic Generation Mediated by Dark Excitons.

All-optical control of nonlinear photonic processes in nanomaterials is of significant interest from a fundamental viewpoint and with regard to applications ranging from ultrafast data processing to spectroscopy and quantum technology. However, these applications rely on a high degree of control over the nonlinear response, which still remains elusive. Here, we demonstrate giant and broadband all-optical ultrafast modulation of second-harmonic generation (SHG) in monolayer transition-metal dichalcogenides mediated by the modified excitonic oscillation strength produced upon optical pumping. We reveal a dominant role of dark excitons to enhance SHG by up to a factor of ∼386 at room temperature, 2 orders of magnitude larger than the current state-of-the-art all-optical modulation results. The amplitude and sign of the observed SHG modulation can be adjusted over a broad spectral range spanning a few electronvolts with ultrafast response down to the sub-picosecond scale via different carrier dynamics. Our results not only introduce an efficient method to study intriguing exciton dynamics, but also reveal a new mechanism involving dark excitons to regulate all-optical nonlinear photonics.

Effect of crystal structure on the Young's modulus of GaP nanowires.

Young's modulus of tapered mixed composition (zinc-blende with a high density of twins and wurtzite with a high density of stacking faults) gallium phosphide (GaP) nanowires (NWs) was investigated by atomic force microscopy. Experimental measurements were performed by obtaining bending profiles of as-grown inclined GaP NWs deformed by applying a constant force to a series of NW surface locations at various distances from the NW/substrate interface. Numerical modeling of experimental data on bending profiles was done by applying Euler-Bernoulli beam theory. Measurements of the nano-local stiffness at different distances from the NW/substrate interface revealed NWs with a non-ideal mechanical fixation at the NW/substrate interface. Analysis of the NWs with ideally fixed base resulted in experimentally measured Young's modulus of 155 ± 20 GPa for ZB NWs, and 157 ± 20 GPa for WZ NWs, respectively, which are in consistence with a theoretically predicted bulk value of 167 GPa. Thus, impacts of the crystal structure (WZ/ZB) and crystal defects on Young's modulus of GaP NWs were found to be negligible.

Single-step chemical vapour deposition of anti-pyramid MoS2/WS2 vertical heterostructures.

Van der Waals heterostructures are the fundamental building blocks of electronic and optoelectronic devices. Here we report that, through a single-step chemical vapour deposition (CVD) process, high-quality vertical bilayer MoS2/WS2 heterostructures with a grain size up to ∼60 µm can be synthesized from molten salt precursors, Na2MoO4 and Na2WO4. Instead of normal pyramid vertical heterostructures grown by CVD, this method synthesizes an anti-pyramid MoS2/WS2 structure, which is characterized by Raman, photoluminescence and second harmonic generation microscopy. Our facile CVD strategy for synthesizing anti-pyramid structures unveils a new synthesis route for the products of two-dimensional heterostructures and their devices for application.