RESUMEN
Beta-gallium oxide (ß-Ga2O3) is emerging as a promising ultrawide band gap (UWBG) semiconductor, which is vital for high-power, high-frequency electronics and deep-UV optoelectronics. It is especially significant for flexible wearable electronics, enabling the fabrication of high-performance Ga2O3-based devices at low temperatures. However, the limited crystallinity and pronounced structural defects arising from the low-temperature deposition of Ga2O3 films significantly restrict the heterojunction interface quality and the relevant electrical performance of Ga2O3-based devices. In this work, cuprous oxide (Cu2O)/Zr-doped ß-Ga2O3 heterojunction diodes are fabricated by magnetron sputtering without intentional substrate heating, followed by an investigation into their microstructure and electrical behaviors. Zr doping can markedly enhance the Ga2O3 crystallinity at low substrate temperatures, transforming the amorphous structure of pristine Ga2O3 films into the crystallized ß phase. Moreover, crystalline ß-Ga2O3 facilitates the epitaxial growth of the Cu2O phase, suppressing the formation of detrimental secondary phase CuO at the heterojunction interface. Benefiting from the high-quality heterojunction interface, the Cu2O/Zr-doped ß-Ga2O3 heterojunction diode exhibits a near-ideal electrical behavior with a low ideality factor of 1.6. The consistent electrical parameters extracted from current-voltage (J-V) and capacitance-voltage (C-V) measurements also confirm the high quality of ß-Ga2O3. This work highlights the potential for the low-temperature production of high-quality ß-Ga2O3-based heterojunction devices through Zr doping.
RESUMEN
With the arrival of the Fifth Generation (5G) communication era, there has been an urgent demand for acoustic filters with a high frequency and ultrawide bandwidth used in radio-frequency (RF) front-ends filtering and signal processing. First-order antisymmetric (A1) lamb mode resonators based on LiNbO3 film have attracted wide attention due to their scalable, high operating frequency and large electromechanical coupling coefficients (K2), making them promising candidates for sub-6 GHz wideband filters. However, A1 mode resonators suffer from the occurrence of transverse modes, which should be addressed to make these devices suitable for applications. In this work, theoretical analysis is performed by finite element method (FEM), and the admittance characteristics of an A1 mode resonator and displacement of transverse modes near the resonant frequency (fr) are investigated. We propose a novel Dielectric-Embedded Piston Mode (DEPM) structure, achieved by partially etching a piezoelectric film filled with SiO2, which can almost suppress the transverse modes between the resonant frequency (fr) and anti-resonant frequency (fa) when applied on ZY-cut LiNbO3-based A1 mode resonators. This indicates that compared with Broadband Piston Mode (BPM), Filled-broadband Piston Mode (FPM) and standard structures, the DEPM structure is superior. Furthermore, the design parameters of the resonator are optimized by adjusting the width, depth and filled materials in the etched window of the DEPM structure to obtain a better suppression of transverse modes. The optimized A1 mode resonator using a DEPM structure exhibits a transverse-free response with a high fr of 3.22 GHz and a large K2 of ~30%, which promotes the application of A1 mode devices for use in 5G RF front-ends.
RESUMEN
Magnetic skyrmions with a well-defined spin texture have shown unprecedented potential for various spintronic applications owning to their topologically non-trivial and quasiparticle properties. To put skyrmions into practical technology, efficient manipulation, especially the inhibition of skyrmion Hall effect (SkHE) has been intensively pursued. In spite of the recent progress made on reducing SkHE in several substituted systems, such as ferrimagnets and synthetic antiferromagnets, the organized creation and current driven motion of skyrmions with negligible SkHE in ferromagnets remain challenging. Here, by embedding the [Co/Pd] multilayer into a surface acoustic wave (SAW) delay line where the longitudinal leaky SAW is excited to provide both the strain and thermal effect, we experimentally realized the ordered generation of magnetic skyrmions. The resultant current-induced skyrmions movement with negligible SkHE was observed, which can be attributed to the energy redistribution of the system during the excitation of SAW. Our findings open up an unprecedentedly new perspective for manipulating topological solitons, which could possibly trigger the future discoveries in skyrmionics and spin acousto-electronics.
RESUMEN
The 5G communication system has experienced a substantial expansion of the spectrum, which poses higher requirements to radio frequency (RF) filters in enhancing their operating frequencies and bandwidths. To this end, this work focused on solving the filtering scheme for challenging 5G n77 and n78 bands and successfully implemented the corresponding spurious-free surface acoustic wave (SAW) filters exploiting large-coupling shear horizontal (SH) modes based on X-cut LiNbO3 (LN)/silicon carbide (SiC) heterostructure. Here, we initially investigated the suppression methods for spurious modes theoretically and experimentally and summarized an effective normalized LN thickness ( [Formula: see text] range of 0.15-0.30 for mitigating Rayleigh modes and higher order modes, as well as tilted interdigital transducers (IDT) by about 24° for eliminating transverse modes. Resonators with wavelengths ( λ) from 0.95 to [Formula: see text] were also fabricated, showing a scalable resonance from 2.48 to 4.21 GHz without any in-band ripple. Two filters completely meeting 5G n77 and n78 full bands were finally constructed, showing center frequencies ( fc) of 3763 and 3560 MHz, 3-dB fractional bandwidths (FBW) of 24.8% and 15.6%, and out-of-band (OoB) rejections of 18.7 and 28.1 dB, respectively. This work reveals that X-LN/SiC heterostructure is a promising underpinning material for SAW filters in 5G commercial applications.
RESUMEN
Surface acoustic waves (SAW) provide a promising platform to study spin-phonon coupling, which can be achieved by SAW-driven ferromagnetic resonance (FMR) for efficient acoustic manipulation of spin. Although the magneto-elastic effective field model has achieved great success in describing SAW-driven FMR, the magnitude of the effective field acting on the magnetization induced by SAW still remains hard to access. Here, by integrating ferromagnetic stripes with SAW devices, direct-current detection for SAW-driven FMR based on electrical rectification is reported. By analyzing FMR rectified voltage, the effective fields are straightforwardly characterized and extracted, which exhibits the advantages of better integration compatibility and lower cost than traditional methods such as vector-network analyzer-based techniques. A large nonreciprocal rectified voltage is obtained, which is attributed to the coexistence of in-plane and out-of-plane effective fields. The effective fields can be modulated by controlling the longitudinal and shear strains within the films to achieve almost 100% nonreciprocity ratio, demonstrating the potential for electrical switches. Besides its fundamental significance, this finding provides a unique opportunity for a designable spin acousto-electronic device and its convenient signal readout.
RESUMEN
Phosphorus is one of the important metabolic elements for living organisms, but excess phosphorus in water can lead to eutrophication. At present, the removal of phosphorus in water bodies mainly focuses on inorganic phosphorus, while there is still a lack of research on the removal of organic phosphorus (OP). Therefore, the degradation of OP and synchronous recovery of the produced inorganic phosphorus has important significance for the reuse of OP resources and the prevention of water eutrophication. Herein, a novel FeOOH-loaded aminated polyacrylonitrile fiber (PANAF-FeOOH) was constructed to enhance the removal of OP and phosphate. Taking phenylphosphonic acid (PPOA) as an example, the results indicated that modification of the aminated fiber was beneficial to FeOOH fixation, and the PANAF-FeOOH prepared with 0.3 mol L-1 Fe(OH)3 colloid had the best performance for OP degradation. The PANAF-FeOOH efficiently activated peroxydisulfate (PDS) for the degradation of PPOA with a removal efficiency of 99%. Moreover, the PANAF-FeOOH maintained high removal capacity for OP over five cycles as well as strong anti-interference in a coexisting ion system. In addition, the removal mechanism of PPOA by the PANAF-FeOOH was mainly attributed to the enrichment effect of PPOA adsorption on the fiber surface's special microenvironment, which was more conducive to contact with SO4â¢- and â¢OH generated by PDS activation. Furthermore, the PANAF-FeOOH prepared with 0.2 mol L-1 Fe(OH)3 colloid possessed excellent phosphate removal capacity with a maximal adsorption quantity of 9.92 mg P g-1. The adsorption kinetics and isotherms of the PANAF-FeOOH for phosphate were best depicted by pseudo-quadratic kinetics and a Langmuir isotherm model, showing a monolayer chemisorption procedure. Additionally, the phosphate removal mechanism was mainly due to the strong binding force of iron and the electrostatic force of protonated amine on the PANAF-FeOOH. In conclusion, this study provides evidence for PANAF-FeOOH as a potential material for the degradation of OP and simultaneous recovery of phosphate.
RESUMEN
To meet the demands of highly integrated and miniaturized radio frequency front-end (RFFE) modules, multi-passband filters which support multi-channel compounding come to the foreground. In this work, we proposed a new design of a dual-passband surface acoustic wave (SAW) filter based on a 32°YX-LiNbO3 (LN)/SiO2/SiC multilayered structure. The filter is of a standalone ladder topology and comprises dual-mode resonators, in which the shear horizontal (SH) mode and high-order SH mode are simultaneously excited through electrode thickness modulation. The impact of electrode thickness on the performance of the dual-mode resonator was systematically investigated by the finite element method (FEM), and resonators were prepared and verified the simulation results. The electromechanical coupling coefficients (K2) of the SH modes are 15.1% and 17.0%, while the maximum Bode-Q (Qmax) values are 150 and 247, respectively, for the fabricated resonators with wavelengths of 1 µm and 1.1 µm. In terms of the high-order SH modes in these resonators, the K2 values are 9.8% and 8.4%, and Qmax values are 190 and 262, respectively. The fabricated dual-band filter shows the center frequencies (fc) of 3065 MHz and 4808 MHz as two bands, with 3-dB fractional bandwidths (FBW) of 5.1% and 5.9%, respectively. Such a dual-band SAW filter based on a conventional ladder topology is meaningful in terms of its compact layout and diminished area occupancy. This work provides a promising avenue to constitute a high-performance dual-passband SAW filter for sub-6 GHz RF application.
RESUMEN
Ovarian cancer (OVCA) is one of the most common types of cancer in women worldwide. Recent studies have focused on the presence and effect of somatic mutations in patients with OVCA; however, studies on the roles of mutations located in the untranslated regions (UTR) of genes in OVCA remain limited. In the present study, a frequent somatic mutation in the glyceraldehyde 3phosphate dehydrogenase (GADPH) 3'UTR was identified using transcriptome sequencing of 120 pairs of OVCA tissue samples. The mutant GAPDH 3'UTR promoted tumor growth and cell motility. Furthermore, the mutation in the GAPDH 3'UTR significantly downregulated the levels of mature miR125b by creating a new miR125b binding site. Finally, STAT3 levels were increased in SKOV3 cells stably expressing the mutant GADPH 3'UTR, which is a critical target gene of miR125b. In conclusion, the present study demonstrated that the mutation located in GAPDH 3'UTR promoted OVCA growth and development by sponging miR125b and thereby affecting STAT3 expression levels.