Monolithic 24 cm2 flexible triple-junction solar cell encapsulated module based on the ipsilateral electrode welding technology.

The inverted metamorphic multi-junction solar cell is anticipated to be widely applied in stratospheric flight because of its exceptional properties of flexibility and light weight. We propose an ipsilateral welding technology based on Ti/Au electrodes to simplify the fabrication process of GaInP/GaAs/InGaAs solar cells and encapsulate large-sized flexible solar cells. After annealing at 200°C for 2 h, the Ti/Au electrode achieved a low specific contact resistivity of 2.9×10-7 Ω⋅c m 2. The performance of the ohmic contact remains stable after the thermal cycling tests. The Ti/Au electrode can require less heat input for welding to reduce the risk of microcrack formation of the solar cells. By employment of this electrode, a 24c m 2 solar cell achieved a conversion efficiency of 34.74%. A flexible solar cell module with an efficiency of 32.82% under AM 1.5G illumination was obtained by the ipsilateral electrode welding technology.

Monolithic 24 cm2 flexible triple-junction solar cell encapsulated module based on the ipsilateral electrode welding technology: erratum.

This erratum corrects an error in Fig. 1 of the original paper, Appl. Opt.63, 2815 (2024)APOPAI0003-693510.1364/AO.518102.

Flexible bidirectional self-powered photodetector with significantly reduced volume and accelerated response speed based on hydrogel and lift-off GaN-based nanowires.

Due to the wide range of potential applications for next-generation multi-functional devices, the flexible self-powered photodetector (PD) with polarity-switchable behavior is essential but very challenging to be realized. Herein, a wearable bidirectional self-powered PD based on detached (Al,Ga)N and (In,Ga)N nanowires has been proposed and demonstrated successfully. Arising from the photovoltage-competing dynamics across (Al,Ga)N and (In,Ga)N nanowire photoelectrodes, such PD can generate the positive (33.3 mA W -1) and negative (-0.019 mA W -1) photo-responsivity under ultraviolet (UV) and visible illumination, respectively, leading to the bidirectional photocurrent behavior. Thanks to the introduction of quasi solid-state hydrogel, the PD can work without the liquid-electrolyte, thus remarkably reducing the volume from about 482 cm3 to only 0.18 cm3. Furthermore, the use of hydrogel is found to enhance response speed in the UV range by reducing the response time for more than 95%, which is mainly attributed to the increased open circuit potential and reduced ion transport distance. As the GaN connecting segment is pretty thin, the piezoelectric charges generated by stress are proposed to have only a limited effect on the photocurrent density. Therefore, both the stable on-off switching characteristics and photocurrent densities can still be achieved after being bent 400 times. With an excellent flexibility, this work creates opportunities for technological applications of bidirectional photocurrent PDs in flexible optoelectronic devices, e.g., wearable intelligent sensors.

Enhance the responsivity of self-driven ultraviolet photodetector by (Al,Ga)N nanowire/graphene/PVDF heterojunction with high stability.

Due to the low-power consumption, self-driven ultraviolet (UV) photodetectors have great potentials in a broad range of applications, such as optical communication, ozone monitoring, bio-medicine, and flame detection. In this Letter, it is pretty novel to enhance the photocurrent and responsivity of self-driven UV photodetectors by (Al,Ga)N nanowire/graphene/polyvinylidene fluoride (PVDF) heterojunction successfully. Compared to those of the photodetector with only nanowire/graphene heterojunction, it is found that both the photocurrent and responsivity of the photodetector with nanowire/graphene/PVDF heterojunction can be enhanced more than 100%. It is proposed that PVDF could maintain the internal gain by increasing the number of carrier cycles. Furthermore, this photodetector can also have a high detectivity of 5.3×1011 Jones and fast response speed under 310 nm illumination. After preserving for one month without any special protection, both photocurrent and responsivity of the photodetector with nanowire/graphene/PVDF heterojunction are demonstrated to be quite stable. Therefore, this work paves an effective way to improve the performance of photodetectors for their applications in the fields of next-generation optoelectronic devices.

Enhancing microstructure and device performance of InGaN quantum dot micro-LEDs through substrate off-cut angle modulation.

InGaN quantum dots (QDs) are regarded as a compelling candidate material for the fabrication of high-quality GaN-based micro-LEDs. In this work, to study the impact of a substrate structure on InGaN QDs and QD-based micro-LEDs, GaN-on-sapphire substrates with off-cut angles toward the a-axis of 0.2°, 0.4°, and 0.7° were utilized as templates for the fabrication of InGaN QDs and InGaN QDs-based micro-LEDs. Experimental results show that GaN template with 0.4° off-cut angle exhibits the narrowest terrace width and enables InGaN QDs to be higher and more uniform. The InGaN QD sample grown on 0.4° substrate has a very small wavelength shift of 2.5 nm with temperature increasing and owns the longest photoluminescence peak wavelength implying the highest In content. Furthermore, electroluminescence (EL) spectra demonstrate that QD-based micro-LED array has excellent wavelength stability under various injection currents, and the stability can be improved further on a GaN template with narrower terraces. The results indicate that altering the terrace width of GaN template is a feasible scheme for improving the properties of GaN-based micro-LEDs.

Accelerated aging of unencapsulated flexible GaInP/GaAs/InGaAs solar cells by means of damp heat and thermal cycling tests.

The extended damp heat and thermal cycling tests were performed on unencapsulated flexible thin-film GaInP/GaAs/InGaAs solar cells to assess the long-term stability. The solar cells were subjected to 85 °C/85% damp heat test for more than 1000 h and 420 cycles of thermal cycling test between -60 °C and 75 °C, respectively. The performance attenuations of flexible solar cells were less than 2% in both cases, which were due to the slow decline of the open-circuit voltage with aging time. The slight decrease in open voltage was attributed to the increase in reverse saturation current due to the enhanced recombination, which was in good agreement with the calculation based on the two-diode model. The good performance of the unencapsulated flexible GaInP/GaAs/InGaAs solar cells in severe environment indicated the stable and reliable device fabrication art in the experiment.

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy.

InGaN quantum dots (QDs) have attracted significant attention as a promising material for high-efficiency micro-LEDs. In this study, plasma-assisted molecular beam epitaxy (PA-MBE) was used to grow self-assembled InGaN QDs for the fabrication of green micro-LEDs. The InGaN QDs exhibited a high density of over 3.0 × 1010 cm-2, along with good dispersion and uniform size distribution. Micro-LEDs based on QDs with side lengths of the square mesa of 4, 8, 10, and 20 µm were prepared. Attributed to the shielding effect of QDs on the polarized field, luminescence tests indicated that InGaN QDs micro-LEDs exhibited excellent wavelength stability with increasing injection current density. The micro-LEDs with a side length of 8 µm showed a shift of 16.9 nm in the peak of emission wavelength as the injection current increased from 1 A/cm2 to 1000 A/cm2. Furthermore, InGaN QDs micro-LEDs maintained good performance stability with decreasing platform size at low current density. The EQE peak of the 8 µm micro-LEDs is 0.42%, which is 91% of the EQE peak of the 20 µm devices. This phenomenon can be attributed to the confinement effect of QDs on carriers, which is significant for the development of full-color micro-LED displays.

Self-powered (In,Ga)N-nanowire-based photodetector with fast response speed for under-seawater detection.

Due to the requirements of oceanography exploration and detection, self-powered photodetectors (PDs) with low-power consumption are essential for the next-generation optoelectronic applications. In this work, we successfully demonstrate a self-powered photoelectrochemical (PEC) PD in seawater based on the (In,Ga)N/GaN core-shell heterojunction nanowires. Compared to those of the PD in pure water, it is found that the upward and downward overshooting features of current can be the key reason contributing to the much faster response speed of the PD in seawater. Thanks to the enhanced response speed, the rise time of PD can be reduced more than 80%, and the fall time remains only 30% by applying in seawater instead of pure water. The key factors of generating these overshooting features should be the instantaneous temperature gradient, carrier accumulation and elimination on the semiconductor/electrolyte interfaces at the moments of light on and off. By the analysis of experimental results, the Na+ and Cl- ions are proposed to be the main factors affecting the PD behavior in seawater, which can enhance the conductivity and accelerate the oxidation-reduction reaction significantly. This work paves an effective way to develop the new self-powered PDs for the wide applications in under-seawater detection and communication.

The Effect of Periodic Duty Cyclings in Metal-Modulated Epitaxy on GaN:Mg Film.

Metal modulation epitaxy (MME) is a technique in which metal beams (Al, Ga, In, and Mg) are switched on and off in short periods in an RF MBE system while a continuous nitrogen plasma beam is kept on. We systematically studied the effect of periodic duty cycling on the morphology, crystalline quality, Mg doping concentration, and electrical properties of GaN:Mg films grown by MME. When the metal shutter duty cycling is 20 s open/10 s close, the sample has smooth surface with clear steps even with Mg doping concentration higher than 1 × 1020 cm-3. The RMS roughness is about 0.5 nm. The FWHM of (002) XRD rocking curve is 230 arcsec and the FWHM of (102) XRD rocking curve is 260 arcsec. As result, a hole concentration of 5 × 1018 cm-3 and a resistivity of 1.5 Ω·cm have been obtained. The hole concentration increases due to the incorporation of surface accumulated Mg dopants into suitable Ga substitutional sites with minimal formation of compensatory defects.

Detach GaN-Based Film to Realize a Monolithic Bifunctional Device for Both Lighting and Detection.

Due to the emerging requirements of miniaturization and multifunctionality, monolithic devices with both functions of lighting and detection are essential for next-generation optoelectronic devices. In this work, based on freestanding (In,Ga)N films, we demonstrate a monolithic device with two functions of lighting and self-powered detection successfully. The freestanding (In,Ga)N film is detached from the epitaxial silicon (Si) substrate by a cost-effective and fast method of electrochemical etching. Due to the stress release and the lightening of the quantum-confined Stark effect (QCSE), the wavelength blueshift of electroluminescent (EL) peak is very small (<1 nm) when increasing the injection current, leading to quite stable EL spectra. On the other hand, the proposed monolithic bifunctional device can have a high ultraviolet/visible reject ratio (Q = 821) for self-powered detection, leading to the excellent detection selectivity. The main reason can be attributed to the removal of Si by the lift-off process, which can limit the response to visible light. This work paves an effective way to develop new monolithic multifunctional devices for both detection and display.

Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy.

Self-assembled growth of blue-green-yellow-red InGaN quantum dots (QDs) on GaN templates using plasma-assisted molecular beam epitaxy were investigated. We concluded that growth conditions, including small N2 flow and high growth temperature are beneficial to the formation of InGaN QDs and improve the crystal quality. The lower In/Ga flux ratio and lower growth temperature are favorable for the formation of QDs of long emission wavelength. Moreover, the nitrogen modulation epitaxy method can extend the wavelength of QDs from green to red. As a result, visible light emissions from 460 nm to 622 nm have been achieved. Furthermore, a 505 nm green light-emitting diode (LED) based on InGaN/GaN MQDs was prepared. The LED has a low external quantum efficiency of 0.14% and shows an efficiency droop with increasing injection current. However, electroluminescence spectra exhibited a strong wavelength stability, with a negligible shift of less than 1.0 nm as injection current density increased from 8 A/cm2 to 160 A/cm2, owing to the screening of polarization-related electric field in QDs.

Effects and mechanisms of In surfactant on high Al-content AlGaN grown by plasma-assisted molecular beam epitaxy.

High Al-content AlGaN epilayers were grown on AlN template by using indium (In) surfactant with plasma-assisted molecular beam epitaxy (PA-MBE), and deep ultraviolet emission at 235 nm was obtained at room temperature. The effects and mechanisms of In-surfactant on the crystalline quality and optical properties of AlGaN were investigated. It was found that In-surfactant could facilitate two-dimensional AlGaN growth by reducing activation barrier for Al/Ga atoms to cross steps and effectively increasing the migration rate on the growth surface, and thus improve surface morphology and decrease defect density. The photoluminescence measurements revealed that the optical properties were remarkably improved by adopting In as surfactant, and phase separation was also effectively eliminated. Furthermore, the concentration of impurities including oxygen and silicon was decreased, which is attributed to higher defects formation energy for these impurities with In-surfactant assisted epitaxy growth.

SiO2 Passivated Graphene Saturable Absorber Mirrors for Ultrashort Pulse Generation.

Owing to its broadband absorption, ultrafast recovery time, and excellent saturable absorption feature, graphene has been recognized as one of the best candidates as a high-performance saturable absorber (SA). However, the low absorption efficiency and reduced modulation depth severely limit the application of graphene-based SA in ultrafast fiber lasers. In this paper, a single-layer graphene saturable absorber mirror (SG-SAM) was coated by a quarter-wave SiO2 passivated layer, and a significantly enhanced modulation depth and reduced saturation intensity were obtained simultaneously compared to the SG-SAM without the SiO2 coating layer. In addition, long-term operational stability was found in the device due to the excellent isolation and protection of the graphene absorption layer from the external environment by the SiO2 layer. The high performance of the SAM was further confirmed by the construction of a ring-cavity EDF laser generating mode-locked pulses with a central wavelength of 1563.7 nm, a repetition rate of 34.17 MHz, and a pulse width of 830 fs.

A Self-Powered Transparent Photodetector Based on Detached Vertical (In,Ga)N Nanowires with 360° Omnidirectional Detection for Underwater Wireless Optical Communication.

Underwater wireless optical communication (UWOC) is a wireless communication technology using visible light to transmit data in an underwater environment, which has wide applications. Based on lift-off (In,Ga)N nanowires, this work has proposed and successfully demonstrated a self-powered photoelectrochemical (PEC) photodetector (PD) with excellent transmissivity. The transparent functionality of the PD is critical for 360° omnidirectional underwater detection, which was realized by detaching the (In,Ga)N nanowires from the opaque epitaxial substrates to the indium tin oxide (ITO)/glass. It was also found that the insulating SiO2 layer can enhance the photocurrent by about 12 times. The core-shell structure of the nanowires is beneficial for generating carriers and contributing to the photocurrent. Furthermore, a communication system with ASCII code is set to demonstrate the PD detection in underwater communication. This work paves an effective way to develop 360° omnidirectional PDs for the wide applications in UWOC system and underwater photodetection.

Quantitative amplitude-modulation scanning Kelvin probe microscopy via the second eigenmode excitation.

Amplitude modulation scanning Kelvin probe microscopy (AM-SKPM) is widely used to measure the contact potential difference (CPD) between probe and samples in ambient or dry inert atmosphere. However, AM-SKPM is generally considered quantitatively inaccurate due to crosstalk between the cantilever and the sample. Here we demonstrate that the accuracy of AM-SKPM-based CPD measurements is drastically improved by exciting the SKPM probe at its second eigenmode. In the second eigenmode of oscillation, there exists a stationary node at the cantilever towards its free end, across which the displacement bears opposite signs; therefore driving the SKPM probe at its second eigenmode helps to partially cancel the virtual work done by the cantilever and reduce the crosstalk effect. The improvement in accuracy is experimentally confirmed with interdigitating electrodes calibration samples as well as practical samples such as the cross-section of wafer-bonded GaAs/GaN heterojunction.

Improved photocatalytic activity and stability of InGaN quantum dots/C3N4heterojunction photoelectrode for CO2reduction and hydrogen production.

Photocatalytic conversion of CO2to produce fuel is considered a promising approach to reduce CO2emissions and tackle energy crisis. GaN-based materials have been studied for CO2reduction because of their excellent optical properties and band structure. However, low photocatalytic activity and severe photocorrosion of GaN-based photoelectrode greatly limit their applications. In this work, photocatalytic activity was improved by adopting InGaN quantum dots (QDs) combined with C3N4nano-sheets as photoanode, and thus the efficiency of CO2reduction and the selectivity of hydrogen production were increased significantly. In addition, the photoelectron-chemical corrosion of photoelectrodes has been apparently controlled. InGaN QDs/C3N4has the highest CO and H2productions rates of 14.69µmol mol-1h-1and 140µmol mol-1h-1which were 2.2 times and 14.5 times than that of InGaN film photoelectrode, respectively. The enhancement of photocatalytic activity is attributed to C3N4modification and a large electric dipole forming on the surface of InGaN QDs, which facilitate the separation and transfer of photo-generated carriers and thus promote CO2reduction reaction. This work provides a promising strategy for the development of GaN-based photoanodes with superior stability and efficiency.

Dual-wavelength visible photodetector based on vertical (In,Ga)N nanowires grown by molecular beam epitaxy.

Due to the wide applications of blue and red photodetectors, dual-wavelength (blue/red) photodetectors are promising for future markets. In this work, a dual-wavelength photodetector based on vertical (In,Ga)N nanowires and graphene has been fabricated successfully. By using the transparent graphene, both blue and red responses can be clearly detected. The rise time of response can reach 3.5 ms. Furthermore, the underlying mechanism of double responses has also been analyzed. The main reason contributing to the dual-wavelength response could be the different diameters of nanowires, leading to different In components within (In,Ga)N sections.

Structural dependences of localization and recombination of photogenerated carriers in the top GaInP Subcells of GaInP/GaAs double-junction tandem solar cells.

In high-efficiency GaInP/GaAs double-junction tandem solar cells, GaInP layers play a central role in determining the performance of the solar cells. Therefore, gaining a deeper understanding of the optoelectronic processes in GaInP layers is crucial for improving the energy conversion efficiency of GaInP-based photovoltaic devices. In this work, we firmly show strong dependences of localization and recombination of photogenerated carriers in the top GaInP subcells in the GaInP/GaAs double-junction tandem solar cells on the substrate misorientation angle with excitation intensity- and temperature-dependent photoluminescence (PL). The entire solar cell structures including GaInP layers were grown with metalorganic chemical vapor deposition on GaAs substrates with misorientation angles of 2° (denoted as Sample 2°) and 7° (Sample 7°) off (100) toward (111)B. The PL spectral features of the two top GaInP subcells, as well as their excitation-power and temperature dependences exhibit remarkable variation on the misorientation angle. In Sample 2°, the dominant localization mechanism and luminescence channels are due to the energy potential minima caused by highly ordered atomic domains; In Sample 7°, the main localization and radiative recombination of photogenerated carriers occur in the atomically disordered regions. Our results reveal a more precise picture on the localization and recombination mechanisms of photogenerated carriers in the top GaInP subcells, which could be the crucial factors in controlling the optoelectronic efficiency of the GaInP-based multijunction photovoltaic devices.

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy.

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell.