Adoption of large aperture chirped grating antennas in optical phase array for long distance ranging.

Optical phased array can be widely used in many fields benefiting from its superior performance. We designed and fabricated chirped grating antennas and uniform grating antennas for the optical phased array. The effective aperture of the chirped grating antennas is about twice that of the uniform grating antennas. The chirped grating optical phased array can receive the reflected signal of the object at a distance of 100 m, while the uniform grating optical phased array can only receive 50 m under the same conditions. Additionally, a ranging distance of 25 m is achieved when two chirped grating optical phased arrays are set as the transmitter and receiver.

Non-uniform optical phased array with a large steering angle and high side mode suppression ratio.

An optical phased array (OPA) is one of the most promising methods of light detection and ranging. A non-uniform array with different emitter distances is a method to realize OPA steering without grating lobes or a distance between two adjacent emitters larger than λ/2. However, the side mode suppression ratio (SMSR) will decrease as OPA turns into a large angle. In this paper, 64-, 128-, and 256-channel non-uniform OPAs are optimized by non-dominated sorting genetic algorithm-II (NSGA-II), which is a multi-objective optimization algorithm. Compared with arrays optimized by a genetic algorithm, the SMSR at 80° improves by 2.18, 2.61, and 2.56 dB, respectively.

InGaAs/InP multi-quantum-well nanowires with a lower optical leakage loss on v-groove-patterned SOI substrates.

InGaAs/InP multi-quantum-well nanowires were directly grown on the v-groove-patterned SOI substrate by metal organic chemical vapor deposition. The surface morphology of the nanowires, the thickness of the quantum wells, and the photoluminescence spectra were characterized by scanning electron microscope, transmission electron microscopy, and micro-photoluminescence, respectively. We found in the experiments that the work of removing part of top Si on both sides of the nanowire to further reduce the optical leakage loss could be completed perfectly without complicated processes, such as a lithography process. Numerical simulations showed that the III-V nanowire was able to support an extraordinarily stable optical guided mode with a lower optical leakage loss of 0.21 cm-1 when etching away part of top Si on both sides of the nanowire, and the optical confinement factor of the multi-quantum-well active region was about 8.8%. This approach opens up a way for monolithic photonic integration of III-V compound semiconductors on Si to occur.