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1.
Opt Express ; 32(6): 10552-10562, 2024 Mar 11.
Artículo en Inglés | MEDLINE | ID: mdl-38571263

RESUMEN

In this work, we propose a practical solution to visible vortex laser emission at 532 nm based on second harmonic generation (SHG) in a well-designed waveguide-grating structure. Such an integrated structure is fabricated by femtosecond laser direct writing (FsLDW) in an LBO crystal. Confocal micro-Raman spectroscopy is employed for detailed analysis of FsLDW-induced localized crystalline damage. By optical excitation at 1064 nm, the guiding properties, SHG performance, as well as vortex laser generation of the waveguide-grating hybrid structure are systematically studied. Our results indicate that FsLDW waveguide-grating emitter is a reliable design holding great promise for nonlinear vortex beam generation in integrated optics.

2.
Opt Express ; 31(23): 38419-38429, 2023 Nov 06.
Artículo en Inglés | MEDLINE | ID: mdl-38017949

RESUMEN

Due to sensitive scaling of the wavelength and the visible-light absorption properties with the device dimension, traditional passive silicon photonic devices with asymmetric waveguide structures cannot achieve polarization control at the visible wavelengths. In this work, a simple and small polarization beam splitter (PBS) for a broad visible-light band, using a tailored silicon nitride (Si3N4) ridge waveguide, is presented, which is based on the distinct optical distribution of two fundamental orthogonal polarized modes in the ridge waveguide. The bending loss for different bending radii and the optical coupling properties of the fundamental modes for different Si3N4 ridge waveguide configurations are analyzed. A PBS composed of a bending ridge waveguide structure and a triple-waveguide directional coupler was fabricated on the Si3N4 thin film. The TM excitation of the device based on a bending ridge waveguide structure shows a polarization extinction ratio (PER) of ≥ 20 dB with 33 nm bandwidth (624-657 nm) and insertion loss (IL) ≤ 1 dB at the through port. The TE excitation of the device, based on a triple-waveguide directional coupler with coupling efficiency distinction between the TE0 and TM0 modes, shows a PER of ≥ 18 dB with 50 nm bandwidth (580-630 nm) and insertion loss (IL) ≤ 1 dB at the cross port. The on-chip Si3N4 PBS device is found to possess the highest known PER at a visible broadband range and small (43 µm) footprint. It should be useful for novel photonic circuit designs and further exploration of Si3N4 PBSs.

3.
Nanomaterials (Basel) ; 13(12)2023 Jun 20.
Artículo en Inglés | MEDLINE | ID: mdl-37368321

RESUMEN

On-chip polarization control is in high demand for novel integrated photonic applications such as polarization division multiplexing and quantum communications. However, due to the sensitive scaling of the device dimension with wavelength and the visible-light absorption properties, traditional passive silicon photonic devices with asymmetric waveguide structures cannot achieve polarization control at visible wavelengths. In this paper, a new polarization-splitting mechanism based on energy distributions of the fundamental polarized modes in the r-TiO2 ridge waveguide is investigated. The bending loss for different bending radii and the optical coupling properties of the fundamental modes in different r-TiO2 ridge waveguide configurations are analyzed. In particular, a polarization splitter with a high extinction ratio operating at visible wavelengths based on directional couplers (DCs) in the r-TiO2 ridge waveguide is proposed. Polarization-selective filters based on micro-ring resonators (MRRs) with resonances of only TE or TM polarizations are designed and operated. Our results show that polarization-splitters for visible wavelengths with a high extinction ratio in DC or MRR configurations can be achieved with a simple r-TiO2 ridge waveguide structure.

4.
Opt Express ; 25(16): 19603-19608, 2017 Aug 07.
Artículo en Inglés | MEDLINE | ID: mdl-29041153

RESUMEN

We report the surface cladding-like waveguide fabricated by the cooperation of the ultrafast laser writing and the ion irradiation. The ultrafast laser writes tracks near the surface of the Nd:YAG crystal, constructing a semi-circle columnar structure with a decreased refractive index of - 0.00208. Then, the Nd:YAG crystal is irradiated by the Carbon ion beam, forming an enhanced-well in the semi-circle columnar with an increased refractive index of + 0.0024. Tracks and the enhanced-well consisted a surface cladding-like waveguide. Utilizing this cladding-like waveguide as the gain medium for the waveguide lasing, optimized characterizations were observed compared with the monolayer waveguide. This work demonstrates the refractive index of the Nd:YAG crystal can be well tailored by the cooperation of the ultrafast laser writing and the ion irradiation, which provides an convenient way to fabricate the complex and multilayered photonics devices.

5.
Opt Express ; 24(22): 25482-25490, 2016 Oct 31.
Artículo en Inglés | MEDLINE | ID: mdl-27828486

RESUMEN

We report on the green up-conversion and near-infrared (NIR) emission in Er3+, MgO co-doped nearly stoichiometric LiNbO3 waveguides fabricated by femtosecond laser writing. The waveguides with so-called Type I geometry by laser writing support nearly single-mode propagation of light at NIR wavelength of 1.55 µm. In addition, it has been found that the guidance is only along the vertical (i.e., TM) polarization, which is due to the laser-induced positive changes of extraordinary index in the guiding core. The green up-conversion at 550 nm and 528 nm, corresponding to the transitions of 4S3/2 → 4I15/2, 2H11/2 → 4I15/2, as well as the NIR luminescence emission at C-band centered at 1550 nm under 4I13/2 → 4I15/2 transition have been realized in the waveguides, respectively. Our results have shown that the intensities of the guided-wave green up-conversion and NIR emissions are higher than those obtained from the bulk, which may be owing to the enhanced intracavity optical intensities of the waveguide with respect to the bulk.

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