RESUMEN
Optical properties of the PbTiO3 thin films fabricated by chemical solution deposition have been measured with variable angle spectroscopic ellipsometry in the spectral range of 1-6 eV and in the temperature interval from room temperature to 950 K. The optical response functions and band gap energy were determined in the whole temperature range. The direct band gap varies from the value 3.88 eV at room temperature to the value 3.67 eV just above the phase transition. The temperature dependence of the film lattice parameters was also measured by x-ray and it shows a strong correlation with the band gap. The comparison of experimental data with ab initio electronic structure calculations simulating the temperature development of dielectric function and band gap is also presented.
RESUMEN
The electronic structure, magnetic moments, effective exchange interaction parameter and the magnetic anisotropy energy of [monolayer Co]/Ir(1 1 1) and Co intercalated graphene on Ir(1 1 1) are studied making use of the first-principles density functional theory calculations. A large positive magnetic anisotropy of 1.24 meV/Co is found for [monolayer Co]/Ir(1 1 1), and a high Curie temperature of 1190 K is estimated. These findings show the Co/Ir(1 1 1) system is a promising candidate for perpendicular ultra-high density magnetic recording applications. The magnetic moments, exchange interactions and the magnetic anisotropy are strongly affected by graphene. Reduction of the magnetic anisotropy and the Curie temperature are found for graphene/[monolayer Co]/Ir(1 1 1). It is shown that for graphene placed in the hollow-hexagonal positions over the monolayer Co, the magnetic anisotropy remains positive, while for the placements with one of the C atoms on the top of Co it becomes negative. These findings may be important for assessing the use of graphene for magnetic recording and magnetoelectronic applications.
RESUMEN
Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Néel temperature. Combined with our demonstration of room-temperature-exchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics.
RESUMEN
We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parametrization and the full potential local-density approximation+U calculations give a very similar band structure whose microscopic spectral character is consistent with the physical premise of the k·p kinetic-exchange model. On the other hand, the various models with a band structure comprising an impurity band detached from the valence band assume mutually incompatible microscopic spectral character. By adapting the tight-binding Anderson calculations individually to each of the impurity band pictures in the single Mn impurity limit and then by exploring the entire doping range, we find that a detached impurity band does not persist in any of these models in ferromagnetic (Ga,Mn)As.
RESUMEN
We propose to replace Ga in (Ga,Mn)As with Li and Zn as a route to high Curie temperature, carrier mediated ferromagnetism in a dilute moment n-type semiconductor. Superior material characteristics, rendering Li(Zn,Mn)As a realistic candidate for such a system, include high solubility of the isovalent substitutional Mn impurity and carrier concentration controlled independently of Mn doping by adjusting Li-(Zn,Mn) stoichiometry. Our predictions are anchored by ab initio calculations and comparisons with the familiar and directly related (Ga,Mn)As, by the physical picture we provide for the exchange interaction between Mn local moments and electrons in the conduction band, and by analysis of prospects for the controlled growth of Li(Zn,Mn)As materials.