We show that magnetic skyrmions can be stabilised at room temperature in continuous [Ir/Co/Pt]5 multilayers on SiO2/Si substrates without the prior application of electric current or magnetic field. While decreasing the Co thickness, a transition of the magnetic domain patterns from worm-like state to separated stripes is observed. The skyrmions are clearly imaged in both states using magnetic force microscopy. The density of skyrmions can be significantly enhanced after applying the "in-plane field procedure". Our results provide means to manipulate magnetic skyrmion density, further allowing for the optimised engineering of skyrmion-based devices.
This work is within the objective of understanding the effects caused to Fe-Cr alloys by fast Fe ion irradiation. As the penetration length of Fe ion is of the order of hundreds of nanometers, 70 nm Fe-5at%C and Fe-10at%Cr films were irradiated at room temperature with 490 keV Fe+ ions at increasing fluence corresponding to a maximum damage of 50 displacements per atom (dpa). In Fe-5at%Cr alloy the Cr solute concentration remains unaltered even after a damage of 50 dpa. In the 10at%Cr the Cr solute concentration is reduced, with the increase of damage, asymptotically to a value of 7.2 at%.
Skyrmions in ultrathin ferromagnetic metal (FM)/heavy metal (HM) multilayer systems produced by conventional sputtering methods have recently generated huge interest due to their applications in the field of spintronics. The sandwich structure with two correctly-chosen heavy metal layers provides an additive interfacial exchange interaction which promotes domain wall or skyrmion spin textures that are Néel in character and with a fixed chirality. Lorentz transmission electron microscopy (TEM) is a high resolution method ideally suited to quantitatively image such chiral magnetic configurations. When allied with physical and chemical TEM analysis of both planar and cross-sectional samples, key length scales such as grain size and the chiral variation of the magnetisation variation have been identified and measured. We present data showing the importance of the grain size (mostly < 10 nm) measured from direct imaging and its potential role in describing observed behaviour of isolated skyrmions (diameter < 100 nm). In the latter the region in which the magnetization rotates is measured to be around 30 nm. Such quantitative information on the multiscale magnetisation variations in the system is key to understanding and exploiting the behaviour of skyrmions for future applications in information storage and logic devices.
We have imaged Néel skyrmion bubbles in perpendicularly magnetised polycrystalline multilayers patterned into 1 µm diameter dots, using scanning transmission x-ray microscopy. The skyrmion bubbles can be nucleated by the application of an external magnetic field and are stable at zero field with a diameter of 260 nm. Applying an out of plane field that opposes the magnetisation of the skyrmion bubble core moment applies pressure to the bubble and gradually compresses it to a diameter of approximately 100 nm. On removing the field the skyrmion bubble returns to its original diameter via a hysteretic pathway where most of the expansion occurs in a single abrupt step. This contradicts analytical models of homogeneous materials in which the skyrmion compression and expansion are reversible. Micromagnetic simulations incorporating disorder can explain this behaviour using an effective thickness modulation between 10 nm grains.
We have investigated single electron spin transport in individual single crystal bcc Co30Fe70 nanoparticles using scanning tunnelling microscopy with a standard tungsten tip. Particles were deposited using a gas-aggregation nanoparticle source and individually addressed as asymmetric double tunnel junctions with both a vacuum and a MgO tunnel barrier. Spectroscopy measurements on the particles show a Coulomb staircase that is correlated with the measured particle size. Field emission tunnelling effects are incorporated into standard single electron theory to model the data. This formalism allows spin-dependent parameters to be determined even though the tip is not spin-polarised. The barrier spin polarisation is very high, in excess of 84%. By variation of the resistance, several orders of magnitude of the system timescale are probed, enabling us to determine the spin relaxation time on the island. It is found to be close to 10 µs, a value much longer than previously reported.
The microscopic magnetization variation in magnetic domain walls in thin films is a crucial property when considering the torques driving their dynamic behaviour. For films possessing out-of-plane anisotropy normally the presence of Néel walls is not favoured due to magnetostatic considerations. However, they have the right structure to respond to the torques exerted by the spin Hall effect. Their existence is an indicator of the interfacial Dzyaloshinskii-Moriya interaction (DMI). Here we present direct imaging of Néel domain walls with a fixed chirality in device-ready Pt/Co/AlOx films using Lorentz transmission electron and Kerr microscopies. It is shown that any independently nucleated pair of walls in our films form winding pairs when they meet that are difficult to annihilate with field, confirming that they all possess the same topological winding number. The latter is enforced by the DMI. The field required to annihilate these winding wall pairs is used to give a measure of the DMI strength. Such domain walls, which are robust against collisions with each other, are good candidates for dense data storage.
Quenched disorder affects how nonequilibrium systems respond to driving. In the context of artificial spin ice, an athermal system comprised of geometrically frustrated classical Ising spins with a twofold degenerate ground state, we give experimental and numerical evidence of how such disorder washes out edge effects and provide an estimate of disorder strength in the experimental system. We prove analytically that a sequence of applied fields with fixed amplitude is unable to drive the system to its ground state from a saturated state. These results should be relevant for other systems where disorder does not change the nature of the ground state.
We have studied the dependence on the domain wall structure of the spin-transfer torque current density threshold for the onset of wall motion in curved, Gd-doped Ni(80)Fe(20) nanowires with no artificial pinning potentials. For single vortex domain walls, for both 10% and 1% Gd-doping concentrations, the threshold current density is inversely proportional to the wire width and significantly lower compared to the threshold current density measured for transverse domain walls. On the other hand for high Gd concentrations and large wire widths, double vortex domain walls are formed which require an increase in the threshold current density compared to single vortex domain walls at the same wire width. We suggest that this is due to the coupling of the vortex cores, which are of opposite chirality, and hence will be acted on by opposing forces arising through the spin-transfer torque effect.
Conventional microelectronics exploits only the charge degree of freedom of the electron. Bringing the spin degree of freedom to bear on sensing, radio frequency, memory and logic applications opens up new possibilities for 'more than Moore' devices incorporating magnetic components that can couple to an external field, store a bit of data or represent a Boolean state. Moreover, the electron spin is an archetypal two-state quantum system that is an excellent candidate for a solid-state realization of a qubit.
We have studied field- and current-driven domain-wall (DW) creep motion in a perpendicularly magnetized Co/Pt multilayer wire by real-time Kerr microscopy. The application of a dc current of density of approximately < 10(7) A/cm2 assisted only the DW creeping under field in the same direction as the electron flow, a signature of spin-transfer torque effects. We develop a model dealing with both bidirectional spin-transfer effects and Joule heating, with the same dynamical exponent mu=1/4 for both field- and current-driven creep, and use it to quantify the spin-transfer efficiency as 3.6+/-0.6 Oe cm2/MA in our wires, confirming the significant nonadiabatic contribution to the spin torque.
We determine the composition of intrinsic as well as extrinsic contributions to the anomalous Hall effect (AHE) in the isoelectronic L1_{0} FePd and FePt alloys. We show that the AHE signal in our 30 nm thick epitaxially deposited films of FePd is mainly due to an extrinsic side jump, while in the epitaxial FePt films of the same thickness and degree of order the intrinsic contribution is dominating over the extrinsic mechanisms of the AHE. We relate this crossover to the difference in spin-orbit strength of Pt and Pd atoms and suggest that this phenomenon can be used for tuning the origins of the AHE in complex alloys.
Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined in a regime where crossover from Josephson-like to insulating behaviour is evident. Resistance-temperature data for devices with a physical width of order 100 nm demonstrate suppression of superconductivity, leading to dissipative behaviour that is shown to be consistent with the activation of phase-slip below T(c). This study suggests that by exploiting the Ga-impurity poisoning introduced by the FIB into the periphery of the nanowire, a central superconducting phase-slip nanowire with sub-10 nm dimensions may be engineered within the core of the nanowire.
We have investigated the threshold current density required for depinning a domain wall from constrictions in NiFe nanowires, which give rise to pinning potentials of fixed amplitude but variable profile. We observed it to vary linearly with the angle of the triangular constriction. These results are reproduced using micromagnetic simulations including the adiabatic and nonadiabatic spin-torque terms. By curve-fitting the calculated variations to the experimental results, we obtain the nonadiabaticity parameter beta=0.04(+/-0.005) and current spin polarization P=0.51(+/-0.02).
Point contact Andreev reflection (PCAR) spectroscopy is a common technique for determining the spin polarization of a ferromagnetic sample. The polarization is extracted by measuring the bias dependence of the conductance of a metallic/superconducting point contact. Under ideal conditions, the conductance is dominated by Andreev reflection and the Blonder-Tinkham-Klapwijk (BTK) model can be used to extract a value for the polarization. However, PCAR spectra often exhibit unwanted features in the conductance that cannot be appropriately modelled with the BTK theory. In this paper we isolate some of these unwanted features and show that any further extraction of the spin polarization from these non-ideal spectra proves unreliable. Understanding the origin of these features provides an objective criterion for rejection of PCAR spectra unsuitable for fitting with the modified BTK model.
Giant magnetoresistance (GMR) arises from differential scattering of the majority and minority spin electrons by a ferromagnet (FM) so that the resistance of a heterostructure depends on the relative magnetic orientation of the FM layers within it separated by nonmagnetic spacers. Here, we show that highly nonequilibrium spin accumulation in metallic heterostructures results in a current-dependent nonlinear GMR which is not predicted within the present understanding of GMR. The behavior can be explained by allowing the scattering asymmetries in an ultrathin FM layer to be current dependent.
We demonstrate an isolated magnetic interface anisotropy in amorphous CoFeB films on (Al)GaAs(001), similar to that in epitaxial films but without a magnetocrystalline anisotropy term. The direction of the easy axis corresponds to that due to the interfacial interaction proposed for epitaxial films. We show that the anisotropy is determined by the relative orbital component of the atomic magnetic moments. Charge transfer is ruled out as the origin of the interface anisotropy, and it is postulated that the spin-orbit interaction in the semiconductor is crucial in determining the magnetic anisotropy.
We discuss the fabrication of nanopillar spin electronic devices from metal multilayered heterostructures, utilizing a novel three-dimensional focused ion beam lithography process. Finite element simulation was performed to optimize the geometry of the nanopillar device and to demonstrate that current flow is perpendicular to the plane within the active region of the device. Clear zero-field current induced magnetization switching is observed in our nanopillar devices at room temperature.
Hall probe microscopy has been used to image vortex-antivortex molecules induced in superconducting Pb films by the stray fields from square arrays of magnetic dots. We have directly observed spontaneous vortex-antivortex pairs and studied how they interact with added free (anti)fluxons in an applied magnetic field. We observe a variety of phenomena arising from competing symmetries which either drive added antivortices to join antivortex shells around dots or stabilize the translationally symmetric antivortex lattice between the dots. Added vortices annihilate antivortex shells, leading first to a stable "nulling state" with no free fluxons and then, at high densities, to vortex shells around the dots stabilized by the asymmetric antipinning potential. Our experimental findings are in good agreement with Ginzburg-Landau calculations.
Aspects of exchange bias between antiferromagnets and ferromagnets remain unclear despite recent research. An outstanding issue is the relationship between exchange bias and enhanced coercivity in the ferromagnetic layer. This Letter reports the unexpected finding that a substantial exchange bias can be generated between an antiferromagnet (FeMn) with a higher ordering temperature than that of the ferromagnet (CuNi). We interpret the result in terms of a temperature-dependent competition between interfacial exchange and antiferromagnet anisotropy energies. Crossover of these energies during cooling is responsible for the onset of exchange bias at the blocking temperature.
