Insights into the Growth Orientation and Phase Stability of Chemical-Vapor-Deposited Two-Dimensional Hybrid Halide Perovskite Films.

Chemical vapor deposition (CVD) offers a large-area, scalable, and conformal growth of perovskite thin films without the use of solvents. Low-dimensional organic-inorganic halide perovskites, with alternating layers of organic spacer groups and inorganic perovskite layers, are promising for enhancing the stability of optoelectronic devices. Moreover, their multiple quantum-well structures provide a powerful platform for tuning excitonic physics. In this work, we show that the CVD process is conducive to the growth of 2D hybrid halide perovskite films. Using butylammonium (BA) and phenylethylammonium (PEA) cations, the growth parameters of BA2PbI4 and PEA2PbI4 and mixed halide perovskite films were first optimized. These films are characterized by well-defined grain boundaries and display characteristic absorption and emission features of the 2D quantum wells. X-ray diffraction (XRD) and a noninteger dimensionality model of the absorption spectrum provide insights into the orientation of the crystalline planes. Unlike BA2PbI4, temperature-dependent photoluminescence measurements from PEA2PbI4 show a single excitonic peak throughout the temperature range from 20 to 350 K, highlighting the lack of defect states. These results further corroborate the temperature-dependent synchrotron-based XRD results. Furthermore, the nonlinear optical properties of the CVD-grown perovskite films are investigated, and a high third harmonic generation efficiency is observed.

Dirac Fermion Cloning, Moiré Flat Bands, and Magic Lattice Constants in Epitaxial Monolayer Graphene.

Tuning interactions between Dirac states in graphene has attracted enormous interest because it can modify the electronic spectrum of the 2D material, enhance electron correlations, and give rise to novel condensed-matter phases such as superconductors, Mott insulators, Wigner crystals, and quantum anomalous Hall insulators. Previous works predominantly focus on the flat band dispersion of coupled Dirac states from different twisted graphene layers. In this work, a new route to realizing flat band physics in monolayer graphene under a periodic modulation from substrates is proposed. Graphene/SiC heterostructure is taken as a prototypical example and it is demonstrated experimentally that the substrate modulation leads to Dirac fermion cloning and, consequently, the proximity of the two Dirac cones of monolayer graphene in momentum space. Theoretical modeling captures the cloning mechanism of the Dirac states and indicates that moiré flat bands can emerge at certain magic lattice constants of the substrate, specifically when the period of modulation becomes nearly commensurate with the ( 3 × 3 ) R 30 o \[(\sqrt 3 \; \times \;\sqrt 3 )R{30^o}\] supercell of graphene. The results show that epitaxial single monolayer graphene on suitable substrates is a promising platform for exploring exotic many-body quantum phases arising from interactions between Dirac electrons.

Room-temperature intrinsic ferromagnetism in epitaxial CrTe2 ultrathin films.

While the discovery of two-dimensional (2D) magnets opens the door for fundamental physics and next-generation spintronics, it is technically challenging to achieve the room-temperature ferromagnetic (FM) order in a way compatible with potential device applications. Here, we report the growth and properties of single- and few-layer CrTe2, a van der Waals (vdW) material, on bilayer graphene by molecular beam epitaxy (MBE). Intrinsic ferromagnetism with a Curie temperature (TC) up to 300 K, an atomic magnetic moment of ~0.21 [Formula: see text]/Cr and perpendicular magnetic anisotropy (PMA) constant (Ku) of 4.89 × 105 erg/cm3 at room temperature in these few-monolayer films have been unambiguously evidenced by superconducting quantum interference device and X-ray magnetic circular dichroism. This intrinsic ferromagnetism has also been identified by the splitting of majority and minority band dispersions with ~0.2 eV at Г point using angle-resolved photoemission spectroscopy. The FM order is preserved with the film thickness down to a monolayer (TC ~ 200 K), benefiting from the strong PMA and weak interlayer coupling. The successful MBE growth of 2D FM CrTe2 films with room-temperature ferromagnetism opens a new avenue for developing large-scale 2D magnet-based spintronics devices.

Insight on the silver catalyst distribution during silicon nanowire array formation: an X-ray reflectivity study.

Although metal-catalysts are commonly used to create nanoscale materials at surfaces, little is quantitatively known or understood about the depth distribution profile of the catalyst during the growth process. Using X-ray reflectivity, we report the first quantitative investigation, with nanoscale resolution, of the Ag metal-catalyst depth distribution profile during metal-assisted chemical etch (MACE) growth of Si nanowire (SiNW) arrays on Si(100). Given the very low optical reflectivity of these nanowire arrays, specular reflection from these materials in the X-ray region is extremely challenging to measure because it probes interfaces on the nanoscale. Nevertheless, we demonstrate that with suitable investigation, X-ray specular reflection can be measured and utilized to obtain unique structural information about the composition profile of both Ag and Si. The measurements, which also include X-ray diffraction and complementary electron microscopy, reveal that the Ag nanoparticles distribute along the length of the nanowires upon etching with a Ag density that increases towards the etch front. The Ag nanoparticles coarsen with etch time, indicating a high mobility of Ag ions even though we also find that the Ag does not migrate from the SiNW region into the etch bath during etching. The Ag density gradient and the Ag mobility suggest the existence of a strong chemical force that attracts Ag towards the etch front. These results provide unique and important new insight into the growth process for creating SiNWs from wet chemical etching using metal-catalysts.

Wide Band Gap Semiconductor from a Hidden 2D Incommensurate Graphene Phase.

Producing a usable semiconducting form of graphene has plagued the development of graphene electronics for nearly two decades. Now that new preparation methods have become available, graphene's intrinsic properties can be measured and the search for semiconducting graphene has begun to produce results. This is the case of the first graphene "buffer" layer grown on SiC(0001) presented in this work. We show, contrary to assumptions of the last 40 years, that the buffer graphene layer is not commensurate with SiC. The new modulated structure we've found resolves a long-standing contradiction where ab initio calculations expect a metallic buffer, while experimentally it is found to be a semiconductor. Model calculations using the new incommensurate structure show that the semiconducting π-band character of the buffer comes from partially hybridized graphene incommensurate boundaries surrounding unperturbed graphene islands.