Physical properties of {Ti,Zr,Hf}2Ni2Sn compounds.

Physical properties, i.e. electrical resistivity (4.2-800 K), Seebeck coefficient (300-800 K), specific heat (2-110 K), Vickers hardness and elastic moduli (RT), have been defined for single-phase compounds with slightly nonstoichiometric compositions: Ti2.13Ni2Sn0.87, Zr2.025Ni2Sn0.975, and Hf2.055Ni2Sn0.945. From X-ray single crystal and TEM analyses, Ti2+xNi2Sn1-x, x ∼ 0.13(1), is isotypic with the U2Pt2Sn-type (space group P42/mnm, ternary ordered version of the Zr3Al2-type), also adopted by the homologous compounds with Zr and Hf. For all three polycrystalline compounds (relative densities >95%) the electrical resistivity of the samples is metallic-like with dominant scattering from static defects mainly conditioned by off-stoichiometry. Analyses of the specific heat curves Cpvs. T and Cp/T vs. T2 reveal Sommerfeld coefficients of γTi2Ni2Sn = 14.3(3) mJ mol-1 K-2, γZr2Ni2Sn = 10(1) mJ mol-1 K-2, γHf2Ni2Sn = 9.1(5) mJ mol-1 K-2 and low-temperature Debye-temperatures: θLTD = 373(7)K, 357(14)K and 318(10)K. Einstein temperatures were in the range of 130-155 K. Rather low Seebeck coefficients (<15 µV K-1), power factors (pf < 0.07 mW mK-2) and an estimated thermal conductivity of λ < 148 mW cm-1 K-1 yield thermoelectric figures of merit ZT < 0.007 at ∼800 K. Whereas for polycrystalline Zr2Ni2Sn elastic properties were determined by resonant ultrasound spectroscopy (RUS): E = 171 GPa, ν = 0.31, G = 65.5 GPa, and B = 147 GPa, the accelerated mechanical property mapping (XPM) mode was used to map the hardness and elastic moduli of T2Ni2Sn. Above 180 K, Zr2Ni2Sn reveals a quasi-linear expansion with CTE = 15.4 × 10-6 K-1. The calculated density of states is similar for all three compounds and confirms a metallic type of conductivity. The isosurface of elf shows a spherical shape for Ti/Zr/Hf atoms and indicates their ionic character, while the [Ni2Sn]n- sublattice reflects localizations around the Ni and Sn atoms with a large somewhat diffuse charge density between the closest Ni atoms.

Boron-phil and boron-phob structure units in novel borides Ni3Zn2B and Ni2ZnB: experiment and first principles calculations.

The crystal structures of two novel borides in the Ni-Zn-B system, τ5-Ni3Zn2B and τ6-Ni2ZnB, were determined by single crystal X-ray diffraction (XRSC) in combination with selected area electron diffraction in a transmission electron microscope (SAED-TEM) and electron probe microanalysis (EPMA). Both compounds crystallize in unique structure types (space group C2/m, a = 1.68942(8) nm, b = 0.26332(1) nm, c = 0.61904(3) nm, ß = 111.164(2)°, RF = 0.0219 for Ni3Zn2B, and space group C2/m, a = 0.95296(7) nm, b = 0.28371(2) nm, c = 0.59989(1) nm, ß = 93.009(4)°, RF = 0.0163 for Ni2ZnB). Both compounds have similar building blocks: two triangular prisms centered by boron atoms are arranged along the c-axis separated by Zn layers, which form empty octahedra connecting the boron centered polyhedra. Consistent with the (Ni+Zn)/B ratio, isolated boron atoms are found in τ5-Ni3Zn2B, while B-B pairs exist in τ6-Ni2ZnB. The crystal structure of Ni2ZnB is closely related to that of τ4-Ni3ZnB2, i.e. Ni2ZnB can be formed by removing the nearly planar nickel layer in Ni3ZnB2 and shifting the origin of the unit cell to the center of the B-B pair. The electrical resistivity and specific heat of τ5-Ni3Zn2B reveal the metallic behavior of this compound with an anomaly at low temperature, possibly arising from a Kondo-type interaction. Further analysis on the lattice contribution of the specific heat reveals similarity with τ4-Ni3ZnB2 with some indications of lattice softening in τ5-Ni3Zn2B, which could be related to the increasing metal content and the absence of B-B bonding in τ5-Ni3Zn2B. For the newly found phases, τ5-Ni3Zn2B and τ6-Ni2ZnB as well as for τ3-Ni21Zn2B20 and τ4-Ni3ZnB2 density functional theory (DFT) calculations were performed by means of the Vienna Ab initio Simulation Package (VASP). Total energies and forces were minimized in order to determine the fully relaxed structural parameters, which agree very well with experiment. Energies of formations in the range of -25.2 to -26.9 kJ mol-1 were calculated and bulk moduli in the range of 179.7 to 248.9 GPa were derived showing hardening by increasing the B concentration. Charge transfer is discussed in terms of Bader charges resulting in electronic transfer from Zn to the system and electronic charge gain by B. Ni charge contributions vary significantly with crystallographic position depending on B located in the neighbourhood. The electronic structure is presented in terms of densities of states, band structures and contour plots revealing Ni-B and Ni-Zn bonding features.

The half Heusler system Ti1+xFe1.33-xSb-TiCoSb with Sb/Sn substitution: phase relations, crystal structures and thermoelectric properties.

Investigations of phase relations in the ternary system Ti-Fe-Sb show that the single-phase region of the Heusler phase is significantly shifted from stoichiometric TiFeSb (reported previously in the literature) to the Fe-rich composition TiFe1.33Sb. This compound also exhibits Fe/Ti substitution according to Ti1+xFe1.33-xSb (-0.17 ≤ x ≤ 0.25 at 800 °C). Its stability, crystal symmetry and site preference were established by using X-ray powder techniques and were backed by DFT calculations. The ab initio modeling revealed TiFe1.375Sb to be the most stable composition and established the mechanisms behind Fe/Ti substitution for the region Ti1+xFe1.33-xSb, and of the Fe/Co substitution within the isopleth TiFe1.33Sb-TiCoSb. The calculated residual resistivity of Ti1+xFe1.33-xSb, as well as of the isopleths TiFe1.33Sb-TiCoSb, TiFe0.665Co0.5Sb-TiCoSb0.75Sn0.25 and TiFe0.33Co0.75Sb-TiCoSb0.75Sn0.25, are in a good correlation with the experimental data. From magnetic measurements and 57Fe Mössbauer spectrometry, a paramagnetic behavior down to 4.2 K was observed for TiFe1.33Sb, with a paramagnetic Curie-Weiss temperature of -8 K and an effective moment of 1.11µB per Fe. Thermoelectric (TE) properties were obtained for the four isopleths Ti1+xFe1.33-xSb, TiFe1.33Sb-TiCoSb, TiFe0.665Co0.5Sb-TiCoSb0.75Sn0.25 and TiFe0.29Co0.78Sb-TiCoSb0.75Sn0.25 by measurements of electrical resistivity (ρ), Seebeck coefficient (S) and thermal conductivity (λ) at temperatures from 300 K to 823 K allowing the calculation of the dimensionless figure of merit (ZT). Although p-type Ti1+xFe1.33-xSb indicates a semi-conducting behavior for the Fe rich composition (x = -0.133), the conductivity changes to a metallic type with increasing Ti content. The highest ZT = 0.3 at 800 K was found for the composition TiFe1.33Sb. The TE performance also increases with Fe/Co substitution and reaches ZT = 0.42 for TiCo0.5Fe0.665Sb. No further increase of the TE performance was observed for the Sb/Sn substituted compounds within the sections TiFe0.665Co0.5Sb-TiCoSb0.75Sn0.25 and TiFe0.33Co0.75Sb-TiCoSb0.75Sn0.25. However, ZT-values could be enhanced by about 12% via the optimization of the preparation route (ball-mill conditions and heat treatments).

Ba-filled Ni-Sb-Sn based skutterudites with anomalously high lattice thermal conductivity.

Novel filled skutterudites BayNi4Sb12-xSnx (ymax = 0.93) have been prepared by arc melting followed by annealing at 250, 350 and 450 °C up to 30 days in vacuum-sealed quartz vials. Extension of the homogeneity region, solidus temperatures and structural investigations were performed for the skutterudite phase in the ternary Ni-Sn-Sb and in the quaternary Ba-Ni-Sb-Sn systems. Phase equilibria in the Ni-Sn-Sb system at 450 °C were established by means of Electron Probe Microanalysis (EPMA) and X-ray Powder Diffraction (XPD). With rather small cages Ni4(Sb,Sn)12, the Ba-Ni-Sn-Sb skutterudite system is perfectly suited to study the influence of filler atoms on the phonon thermal conductivity. Single-phase samples with the composition Ni4Sb8.2Sn3.8, Ba0.42Ni4Sb8.2Sn3.8 and Ba0.92Ni4Sb6.7Sn5.3 were used to measure their physical properties, i.e. temperature dependent electrical resistivity, Seebeck coefficient and thermal conductivity. The resistivity data demonstrate a crossover from metallic to semiconducting behaviour. The corresponding gap width was extracted from the maxima in the Seebeck coefficient data as a function of temperature. Single crystal X-ray structure analyses at 100, 200 and 300 K revealed the thermal expansion coefficients as well as Einstein and Debye temperatures for Ba0.73Ni4Sb8.1Sn3.9 and Ba0.95Ni4Sb6.1Sn5.9. These data were in accordance with the Debye temperatures obtained from the specific heat (4.4 K < T < 140 K) and Mössbauer spectroscopy (10 K < T < 290 K). Rather small atom displacement parameters for the Ba filler atoms indicate a severe reduction in the "rattling behaviour" consistent with the high levels of lattice thermal conductivity. The elastic moduli, collected from Resonant Ultrasonic Spectroscopy ranged from 100 GPa for Ni4Sb8.2Sn3.8 to 116 GPa for Ba0.92Ni4Sb6.7Sn5.3. The thermal expansion coefficients were 11.8 × 10(-6) K(-1) for Ni4Sb8.2Sn3.8 and 13.8 × 10(-6) K(-1) for Ba0.92Ni4Sb6.7Sn5.3. The room temperature Vickers hardness values vary within the range from 2.6 GPa to 4.7 GPa. Severe plastic deformation via high-pressure torsion was used to introduce nanostructuring; however, the physical properties before and after HPT showed no significant effect on the materials thermoelectric behaviour.

Ba5{V,Nb}12Sb19+x, novel variants of the Ba5Ti12Sb19+x-type: crystal structure and physical properties.

The novel compounds Ba5{V,Nb}12Sb19+x, initially found in diffusion zone experiments between Ba-filled skutterudite Ba0.3Co4Sb12 and group V transition metals (V,Nb,Ta), were synthesized via solid state reaction and were characterized by means of X-ray (single crystal and powder) diffraction, electron probe microanalysis (EPMA), and physical (transport and mechanical) properties measurements. Ba5V12Sb19.41 (a = 1.21230(1) nm, space group P4[combining overline]3m; RF(2) = 0.0189) and Ba5Nb12Sb19.14 (a = 1.24979(2) nm, space group P4[combining overline]3m; RF(2) = 0.0219) are the first representatives of the Ba5Ti12Sb19+x-type, however, in contrast to the aristotype, the structure of Ba5V12Sb19.41 shows additional atom disorder. Temperature dependent ADPs and specific heat of Ba5V12Sb19.41 confirmed the rattling behaviour of Ba1,2 and Sb7 atoms within the framework built by V and Sb atoms. Electrical resistivity of both compounds show an upturn at low temperature, and a change from p- to n-type conductivity above 300 K in Ba4.9Nb12Sb19.4. As expected from the complex crystal structure and the presence of defects and disorder, the thermal conductivity is suppressed and lattice thermal conductivity of ∼0.43 W m(-1) K(-1) is near values typical for amorphous systems. Vicker's hardness of (3.8 ± 0.1) GPa (vanadium compound) and (3.5 ± 0.2) GPa (niobium compound) are comparable to Sb-based filled skutterudites. However, the Young's moduli measured by nanoindentation for these compounds EI(Ba4.9V12Sb19.0) = (85 ± 2) GPa and EI(Ba4.9Nb12Sb19.4) = (79 ± 5) GPa are significantly smaller than those of skutterudites, which range from about 130 to 145 GPa.

Thermal, magnetic and electronic properties of non-centrosymmetric YbPt2B.

Ternary YbPt2B crystallizes in the non-centrosymmetric hexagonal CePt2B-type structure (space group P6(2)22). Electrical resistivity, specific heat and magnetic measurements reveal a magnetic instability at 5.6 K. Furthermore, a spin-reorientation of presumably a ferromagnetic type occurs around 1.5 K. The behaviour at low temperature is governed by a rather weak Kondo effect, T(K) ⩽ 1 K, in the presence of strong crystalline electric field splitting, with a doublet ground state. Besides, the complex magnetic behaviour presumably results from a Dzyaloshinskii-Moriya interaction triggered by the absence of inversion symmetry in the crystal structure. Scaling according to the de Gennes factor traces back magnetic ordering in YbPt2B to the Rudermann-Kittel-Kasuya-Yoshida (RKKY) interaction and the smooth evolution of the lattice constants and the unit cell volume of REPt2B (RE = rare earths) refers to the 4f(13) electronic configuration of Yb in YbPt2B.

Ti8(Ti(x)Mn(1-x))6Mn39 ('TiMn(~4)'): a metallic spin fluctuation system.

The crystal structure of Ti(8)(Ti(x)Mn(1-x))(6)Mn(39), x = 0.187, was obtained from x-ray single-crystal diffraction data, confirming it to have rhombohedral symmetry (space group [Formula: see text]; a(hex) = 1.100 70(2) nm, c(hex) = 1.944 11(4) nm; R(F) = 0.0293) and isotypism with the prototype Mo(0.38)Cr(0.16)Co(0.46) (the so-called R-phase). On the basis of electron probe micro-analyser results and structure determination, the homogeneity region of the phase TiMn(~4) was determined for temperatures in the range 800 °C < T < 1200 °C and is in between 16.0 at.% Ti and 20 at.% Ti. Various physical properties, determined in the temperature range from ~2 K to room temperature, characterize the compound with composition TiMn(4.26) as a metallic spin fluctuation system, evidenced from a T(3)lnT dependence of the heat capacity in combination with large values of the electronic Sommerfeld constant of the order of 140 mJ mol(-1) K(-2). The occurrence of a small anomaly in the heat capacity and magnetization data around 10 K is attributed to a scenario involving spin freezing phenomena, since a fraction of the order of 10% of all Mn-Mn distances within the unit cell are above a critical distance, where Mn atoms carry a spontaneous magnetic moment.

Cage-forming compounds in the Ba-Rh-Ge system: from thermoelectrics to superconductivity.

Phase relations and solidification behavior in the Ge-rich part of the phase diagram have been determined in two isothermal sections at 700 and 750 °C and in a liquidus projection. A reaction scheme has been derived in the form of a Schulz-Scheil diagram. Phase equilibria are characterized by three ternary compounds: τ(1)-BaRhGe(3) (BaNiSn(3)-type) and two novel phases, τ(2)-Ba(3)Rh(4)Ge(16) and τ(3)-Ba(5)Rh(15)Ge(36-x), both forming in peritectic reactions. The crystal structures of τ(2) and τ(3) have been elucidated from single-crystal X-ray intensity data and were found to crystallize in unique structure types: Ba(3)Rh(4)Ge(16) is tetragonal (I4/mmm, a = 0.65643(2) nm, c = 2.20367(8) nm, and R(F) = 0.0273), whereas atoms in Ba(5)Rh(15)Ge(36-x) (x = 0.25) arrange in a large orthorhombic unit cell (Fddd, a = 0.84570(2) nm, b = 1.4725(2) nm, c = 6.644(3) nm, and R(F) = 0.034). The body-centered-cubic superstructure of binary Ba(8)Ge(43)□(3) was observed to extend at 800 °C to Ba(8)Rh(0.6)Ge(43)□(2.4), while the clathrate type I phase, κ(I)-Ba(8)Rh(x)Ge(46-x-y)□(y), reveals a maximum solubility of x = 1.2 Rh atoms in the structure at a vacancy level of y = 2.0. The cubic lattice parameter increases with increasing Rh content. Clathrate I decomposes eutectoidally at 740 °C: κ(I) ⇔ (Ge) + κ(IX) + τ(2). A very small solubility range is observed at 750 °C for the clathrate IX, κ(IX)-Ba(6)Rh(x)Ge(25-x) (x ∼ 0.16). Density functional theory calculations have been performed to derive the enthalpies of formation and densities of states for various compositions Ba(8)Rh(x)Ge(46-x) (x = 0-6). The physical properties have been investigated for the phases κ(I), τ(1), τ(2), and τ(3), documenting a change from thermoelectric (κ(I)) to superconducting behavior (τ(2)). The electrical resistivity of κ(I)-Ba(8)Rh(1.2)Ge(42.8)□(2.0) increases almost linearly with the temperature from room temperature to 730 K, and the Seebeck coefficient is negative throughout the same temperature range. τ(1)-BaRhGe(3) has a typical metallic electrical resistivity. A superconducting transition at T(C) = 6.5 K was observed for τ(2)-Ba(3)Rh(4)Ge(16), whereas τ(3)-Ba(5)Rh(15)Ge(35.75) showed metallic-like behavior down to 4 K.

Interplay between crystal field splitting and Kondo effect in CeNi9Ge(4-x)Si(x).

The pseudo-ternary solid solution CeNi(9)Ge(4-x)Si(x) (0 ≤ x ≤ 4) has been investigated by means of x-ray diffraction, magnetic susceptibility, specific heat, electrical resistivity, thermopower and inelastic neutron scattering studies. The isoelectronic substitution of germanium by silicon atoms causes a dramatic change of the relative strength of competing Kondo, RKKY and crystal field (CF) energy scales. The strongest effect is the continuous elevation of the Kondo temperature T(K) from approximately 3.5 K for CeNi(9)Ge(4) to about 70 K for CeNi(9)Si(4). This increase of the Kondo temperature is attended by a change of the CF level scheme of the Ce ions. The interplay of the different energy scales results in an incipient reduction of the ground state degeneracy from an effectively fourfold degenerate non-magnetic Kondo ground state with unusual non-Fermi-liquid features of CeNi(9)Ge(4) to a lower one, followed by an increase towards a sixfold, fully degenerate ground state multiplet in CeNi(9)Si(4) (T(K) ∼ Δ(CF)).

Type-I clathrate Ba8Ni(x)Si(46-x): phase relations, crystal chemistry and thermoelectric properties.

The phase relations, crystal structure and thermoelectric properties of the type-I solid solution Ba(8)Ni(x)Si(46-x) were investigated. Based on X-ray diffraction, differential thermal analysis and electron probe microanalysis data, a partial phase diagram was constructed for the Si-rich part of ternary system Ba-Ni-Si at 800 °C. The solubility range of Ni in the clathrate-I phase at 800 °C was determined (2.9 ≤x≤ 3.8) and thermoelectric properties, namely electrical resistivity, Seebeck-coefficient and thermal conductivity, were measured in the temperature range from 300 to 850 K. A shift of the thermoelectric properties from a predominantly metallic to a more semiconducting behavior was observed for an increasing Ni-content. Density functional calculations revealed a significant decrease of the gap width in the density of states induced by the incorporation of Ni. Electrical resistivity and Seebeck coefficients for Ba(8)Ni(x)Si(46-x) with 3.3 ≤x≤ 3.8 have been modeled within the rigid band approximation.

The system uranium-palladium-boron with U(2.5)Pd(20.5)B(6), a new heavy fermion compound.

Phase equilibria in the system U-Pd-B were established at 850 °C by light optical microscopy (LOM) and x-ray powder and single crystal diffraction. Whereas in as-cast alloys only one ternary compound, τ(1)-U(2 + x)Pd(21 - x)B(6), was found to form at x ∼ 0.5, a further compound τ(2) with hitherto unknown structure was observed in alloys annealed at 850 °C. Due to the formation of suitable single crystals, the crystal structures of two binary compounds, UB(12) and UPd(3) have been redetermined from high precision x-ray data. Similarly, the crystal structure of τ(1)-U(2.5)Pd(20.5)B(6) was investigated by single crystal x-ray diffraction (XRD) revealing isotypism with the Cr(23)C(6)-type, (space group [Formula: see text]; a = 1.1687(5) nm; R(F)(2) = Σ|F(0)(2) - F(c)(2)|/ΣF(0)(2) = 0.021). τ(1)-U(2 + x)Pd(21 - x)B(6) is a partially ordered compound where 0.37(1)U + 0.63Pd atoms randomly share the 4a site in (0, 0, 0). Whereas mutual solubility of U-borides and Pd-borides was found at 850 °C to be below 1.0 at.%, a large homogeneity region of fcc-Pd(U, B) extends into the ternary system. U(2.5)Pd(20.5)B(6) has metallic behavior; the ground state properties are determined from a balance of the Kondo effect and the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction, revealing long range antiferromagnetic ordering below 6 K. An extraordinarily large Sommerfeld value (γ > 500 mJ mol(-1) K(-2)) groups U(2.5)Pd(20.5)B(6) among heavy fermion materials.

Phase formation and ground state properties of CeCo9Si4.

The phase relations of the CeCo(9 + δ)Si(4 - δ) system have been studied by means of scanning electron microscopy, electron microprobe analysis and x-ray diffraction. Essentially single phase samples CeCo(9 + δ)Si(4 - δ) (structure-type LaFe(9)Si(4) with space group I4/mcm) are formed in a narrow composition range - 0.3 ≤ δ < 0.1, where stoichiometric CeCo(9)Si(4) exhibits full structural order in space group I4/mcm. The evolution of the ground state of correlated 3d and 4f electrons in the solid solution CeCo(9 + δ)Si(4 - δ) has been investigated by dc susceptibility, magnetization, specific heat and resistivity measurements. Stoichiometric CeCo(9)Si(4) exhibits paramagnetic Kondo lattice behaviour with a largely reduced Co 3d contribution to the magnetic susceptibility as compared to nearly ferromagnetic LaCo(9)Si(4). Nonetheless, very similar to the solid solution LaCo(9 + δ)Si(4 - δ), weak ferromagnetism is observed in CeCo(9 + δ)Si(4 - δ) for δ > 0 and is attributed to substitutional disorder at the Si-sublattice.

On the physical properties of RPd(8)B(2-x) and R(3)Pd(25-x)B(8-y) (R = La, Ce).

Physical properties (magnetization, electrical resistivity and specific heat in the temperature range from 2 to 270 K (0.3-270 K for the resistivity)) have been determined for polycrystalline samples of the ternary compounds RPd(8)B(2 - x) (CePd(8)B(2 - x) type; space group C 2/c) and R(3)Pd(25 - x)B(8 - y) (La(3)Pd(25 - x)B(8 - y) type; space group P 2(1)/c) with R = La, Ce. Rietveld refinement of x-ray powder intensity data confirmed the crystal structure and single-phase condition. LaPd(8)B(2 - x) is a novel representative of the CePd(8)B(2 - x) type (a = 1.7838(1) nm, b = 1.040 24(4) nm, c = 1.164 60(6) nm, ß = 118.56(1)°). Both cerium compounds behave like Kondo lattices.

Evolution of quantum criticality in CeNi(9-x)Cu(x)Ge(4).

Crystal structure, specific heat, thermal expansion, magnetic susceptibility and electrical resistivity studies of the heavy fermion system CeNi(9-x)Cu(x)Ge(4) (0≤x≤1) reveal a continuous tuning of the ground state by Ni/Cu substitution from an effectively fourfold-degenerate non-magnetic Kondo ground state of CeNi(9)Ge(4) (with pronounced non-Fermi-liquid features) towards a magnetically ordered, effectively twofold-degenerate ground state in CeNi(8)CuGe(4) with T(N) = 175 ± 5 mK. Quantum critical behavior, [Formula: see text], is observed for [Formula: see text]. Hitherto, CeNi(9-x)Cu(x)Ge(4) represents the first system where a substitution-driven quantum phase transition is connected not only with changes of the relative strength of the Kondo effect and RKKY interaction, but also with a reduction of the effective crystal field ground state degeneracy.

The formation, structure and physical properties of M(2)Pd(14+x)B(5-y) compounds, with M = La, Ce, Pr, Nd, Sm, Eu, Gd, Lu and Th.

Novel ternary compounds, M(2)Pd(14+x)B(5-y) (M =  La, Ce, Pr, Nd, Sm, Eu, Gd, Lu, Th; x∼0.9, y∼0.1), have been synthesized by arc melting. The crystal structures of Nd(2)Pd(14+x)B(5-y) and Th(2)Pd(14+x)B(5-y) were determined from x-ray single-crystal data and both are closely related to the structure type of Sc(4)Ni(29)B(10). All compounds were characterized by Rietveld analyses and found to be isotypic with the Nd(2)Pd(14+x)B(5-y) type. Measurements of the temperature dependent susceptibility and specific heat as well as the temperature and field dependent resistivity were employed to derive basic information on bulk properties of these compounds. The electrical resistivity of M(2)Pd(14+x)B(5-y), in general, is characterized by small RRR (residual resistance ratio) values originating from defects inherent to the crystal structure. Whereas the compounds based on Ce, Nd, Sm and Gd exhibit magnetic order, those based on Pr and Eu seem to be non-magnetic, at least down to 400 mK. While the non-magnetic ground state of the Pr based compound is a consequence of crystalline electric field effects in the context of the non-Kramers ion Pr, the lack of magnetic order in the case of the Eu based compound results from an intermediate valence state of the Eu ion.

Superconductivity in novel Ge-based skutterudites: {Sr,Ba}pt4Ge12.

Combining experiments and ab initio models we report on SrPt4Ge12 and BaPt4Ge12 as members of a novel class of superconducting skutterudites, where Sr or Ba atoms stabilize a framework entirely formed by Ge atoms. Below T(c)=5.35 and 5.10 K for BaPt4Ge12 and SrPt4Ge12, respectively, electron-phonon coupled superconductivity emerges, ascribed to intrinsic features of the Pt-Ge framework, where Ge-p states dominate the electronic structure at the Fermi energy.

Unusual single-ion non-fermi-liquid behavior in Ce(1-x)LaxNi9Ge4.

We report on specific heat, magnetic susceptibility, and resistivity measurements on the compound Ce(1-x)LaxNi9Ge4 for various concentrations ranging from the stoichiometric system with x = 0 to the dilute limit x = 0.95. Our data reveal single-ion scaling with the Ce concentration and the largest ever recorded value of the electronic specific heat Deltac/T approximately 5.5 J K-2 mol(-1) at T = 0.08 K for the stoichiometric compound x = 0 without any trace of magnetic order. While in the doped samples Deltac/T increases logarithmically below 3 K down to 50 mK, their magnetic susceptibility behaves Fermi-liquid-like below 1 K. These properties make the compound Ce(1-x)LaxNi9Ge4 a unique system on the borderline between Fermi-liquid and non-Fermi-liquid physics.

Heavy fermion superconductivity and magnetic order in noncentrosymmetric CePt3Si.

CePt3Si is a novel heavy fermion superconductor, crystallizing in the CePt3B structure as a tetragonally distorted low symmetry variant of the AuCu3 structure type. CePt3Si exhibits antiferromagnetic order at T(N) approximately 2.2 K and enters into a heavy fermion superconducting state at T(c) approximately 0.75 K. Large values of H(')(c2) approximately -8.5 T/K and H(c2)(0) approximately 5 T refer to heavy quasiparticles forming Cooper pairs. Hitherto, CePt3Si is the first heavy fermion superconductor without a center of symmetry.