Controlling Pt nanoparticle sintering by sub-monolayer MgO ALD thin films.

Metal nanoparticle (NP) sintering is a major cause of catalyst deactivation, as NP growth reduces the surface area available for reaction. A promising route to halt sintering is to deposit a protective overcoat on the catalyst surface, followed by annealing to generate overlayer porosity for gas transport to the NPs. Yet, such a combined deposition-annealing approach lacks structural control over the cracked protection layer and the number of NP surface atoms available for reaction. Herein, we exploit the tailoring capabilities of atomic layer deposition (ALD) to deposit MgO overcoats on archetypal Pt NP catalysts with thicknesses ranging from sub-monolayers to nm-range thin films. Two different ALD processes are studied for the growth of MgO overcoats on Pt NPs anchored on a SiO2 support, using Mg(EtCp)2 and H2O, and Mg(TMHD)2 and O3, respectively. Spectroscopic ellipsometry and X-ray photoelectron spectroscopy measurements reveal significant growth on both SiO2 and Pt for the former process, while the latter exhibits a drastically lower growth per cycle with an initial chemical selectivity towards Pt. These differences in MgO growth characteristics have implications for the availability of uncoated Pt surface atoms at different stages of the ALD process, as probed by low energy ion scattering, and for the sintering behavior during O2 annealing, as monitored in situ with grazing incidence small angle X-ray scattering (in situ GISAXS). The Mg(TMHD)2-O3 ALD process enables exquisite coverage control allowing a balance between physically blocking the Pt surface to prevent sintering and keeping Pt surface atoms free for reaction. This approach avoids the need for post-annealing, hence also safeguarding the structural integrity of the as-deposited overcoat.

Depositing ALD-oxides on MLD-metalcones: enhancing initial growth through O2 plasma densification.

Flexible devices are experiencing a steady increase in popularity, which brings the need of suitable protective/functional coatings for these applications. On the one hand, Atomic Layer Deposition (ALD) produces thin films with great purity, few pinholes and good conformality, but flexibility is rather limited. On the other hand, Molecular Layer Deposition (MLD) can produce partially/fully organic coatings with good flexibility, but stability concerns limit their applications. Therefore, combining ALD and MLD to obtain materials with good flexibility and improved characteristics holds great potential. In this article, we utilised O2 plasma treatments on various metalcone films to improve the compatibility of sequential ALD/MLD depositions. During plasma modification, in situ spectroscopic ellipsometry measurements (in situ SE) suggested that mainly the near-surface region of the metalcone layer was affected by the plasma treatment, locally converting the metalcone into a metal-oxide structure. This structure shielded the underlying metalcone layer from the plasma, thus resulting in a saturative-type behaviour even during extended plasma exposures. X-Ray reflectivity measurements (XRR) could only be fitted with bilayer models, while Fourier-Transform InfraRed spectroscopy (FTIR) showed an absorption decrease in the C-O band and an increase in the CO region. Additionally, film air stability seemed improved by this treatment. ALD-oxides were grown on these plasma-treated metalcones (PT-metalcones), and results were compared to pristine ones. While ALD growth on pristine metalcones always suffered from a delay, after which linear growth was achieved, oxides on PT-metalcones exhibited linear growth immediately, from cycle one. We therefore conclude that, upon O2 plasma exposure, metalcones are densified into a metalcone/oxide bilayer, where the oxide shields the underlying film from further oxidation. And, if an ALD oxide coating is to be deposited on top of these structures, this plasma treatment will make the structure more suitable for post-processing. In applications that require the combination of ALD/MLD multistacks, the use of an intermittent plasma treatment can prove useful.

Atomic layer deposition of ternary ruthenates by combining metalorganic precursors with RuO4 as the co-reactant.

In this work, the use of ruthenium tetroxide (RuO4) as a co-reactant for atomic layer deposition (ALD) is reported. The role of RuO4 as a co-reactant is twofold: it acts both as an oxidizing agent and as a Ru source. It is demonstrated that ALD of a ternary Ru-containing metal oxide (i.e. a metal ruthenate) can be achieved by combining a metalorganic precursor with RuO4 in a two-step process. RuO4 is proposed to combust the organic ligands of the adsorbed precursor molecules while also binding RuO2 to the surface. As a proof of concept two metal ruthenate processes are developed: one for aluminum ruthenate, by combining trimethylaluminum (TMA) with RuO4; and one for platinum ruthenate, by combining MeCpPtMe3 with RuO4. Both processes exhibit self-limiting surface reactions and linear growth as a function of the number of ALD cycles. The observed saturated growth rates are relatively high compared to what is usually the case for ALD. At 100 °C sample temperature, growth rates of 0.86 nm per cycle and 0.52 nm per cycle are observed for the aluminum and platinum ruthenate processes, respectively. The TMA/RuO4 process results in a 1 : 1 Al to Ru ratio, while the MeCpPtMe3/RuO4 process yields a highly Ru-rich composition with respect to Pt. Carbon, hydrogen and fluorine impurities are present in the thin films with different relative amounts for the two investigated processes. For both processes, the as-deposited films are amorphous.

Acid-Base Mediated Ligand Exchange on Near-Infrared Absorbing, Indium-Based III-V Colloidal Quantum Dots.

Colloidal quantum dots (QDs) made from In-based III-V semiconductors are emerging as a printable infrared material. However, the formulation of infrared inks and the formation of electrically conductive QD coatings is hampered by a limited understanding of the surface chemistry of In-based QDs. In this work, we present a case study on the surface termination of IR active III-V QDs absorbing at 1220 nm that were synthesized by reducing a mixture of indium halides and an aminoarsine by an aminophosphine in oleylamine. We find that this recently established synthesis method yields In(As,P) QDs with minor phosphorus admixing and a surface terminated by a mixture of oleylamine and chloride. Exposing these QDs to protic surface-active compounds RXH, such as fatty acids or alkanethiols, initiates a ligand exchange reaction involving the binding of the conjugate base RX- and the desorption of 1 equiv of alkylammonium chloride. Using density functional theory simulations, we confirm that the formation of the alkylammonium chloride salt can provide the energy needed to drive such acid/base mediated ligand exchange reactions, even for weak organic acids such as alkanethiols. We conclude that the unique surface termination of In(As,P) QDs, consisting of a mixture of L-type and X-type ligands and acid/base mediated ligand exchange, can form a general model for In-based III-V QDs synthesized using indium halides and aminopnictogens.

Converting molecular layer deposited alucone films into Al2O3/alucone hybrid multilayers by plasma densification.

Alucones are one of the best-known films in the Molecular Layer Deposition (MLD) field. In this work, we prove that alucone/Al2O3 nanolaminate synthesis can be successfully performed by alternating alucone MLD growth with static O2 plasma exposures. Upon plasma treatment, only the top part of the alucone is densified into Al2O3, while the rest of the film remains relatively unaltered. X-ray reflectivity (XRR) and X-ray photoelectron spectroscopy (XPS) depth profiling show that the process yields a bilayer structure, which remains stable in air. Fourier-transform infrared spectroscopy (FTIR) measurements show that Al2O3 features are generated after plasma treatment, while the original alucone features remain, confirming that plasma treatment results in a bilayer structure. Also, an intermediate carboxylate is created in the interface. Calculations of Al atom density during plasma exposure point towards a partial loss of Al atoms during plasma treatment, in addition to the removal of the glycerol backbone. The effect of different process parameters has been studied. Densification at the highest temperature possible (200 °C) has the best alucone preservation without hindering its thermal stability. In addition, operating at the lowest plasma power is found the most beneficial for the film, but there is a threshold that must be surpassed to achieve successful densification. About 70% of the original alucone film thickness can be expected to remain after densification, but thicker films may result in more diffuse interfaces. Additionally, this process has also been successfully performed in multilayers, showing real potential for encapsulation applications.

Surface mobility and impact of precursor dosing during atomic layer deposition of platinum: in situ monitoring of nucleation and island growth.

The increasing interest in atomic layer deposition (ALD) of Pt for the controlled synthesis of supported nanoparticles for catalysis demands an in-depth understanding of the nucleation controlled growth behaviour. We present an in situ investigation of Pt ALD on planar Si substrates, with native SiO2, by means of X-ray fluorescence (XRF) and grazing incidence small-angle X-ray scattering (GISAXS), using a custom-built synchrotron-compatible high-vacuum ALD setup and focusing on the thermal Pt ALD process, comprising (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) and O2 gas at 300 °C. The evolution in key scattering features provides insights into the growth kinetics of Pt deposits from small nuclei to isolated islands and coalesced worm-like structures. An analysis approach is introduced to extract dynamic information on the average real space parameters, such as Pt cluster shape, size, and spacing. The results indicate a nucleation stage, followed by a diffusion-mediated particle growth regime that is marked by a decrease in average areal density and the formation of laterally elongated Pt clusters. Growth of the Pt nanoparticles is thus not only governed by the adsorption of Pt precursor molecules from the gas-phase and subsequent combustion of the ligands, but is largely determined by adsorption of migrating Pt species on the surface and diffusion-driven particle coalescence. Moreover, the influence of the Pt precursor dose on the particle nucleation and growth is investigated. It is found that the precursor dose influences the deposition rate (number of Pt atoms per cycle), while the particle morphology for a specific Pt loading is independent of the precursor dose used in the ALD process. Our results prove that combining in situ GISAXS and XRF provides an excellent experimental strategy to obtain new fundamental insights about the role of deposition parameters on the morphology of Pt ALD depositions. This knowledge is vital to improve control over the Pt nucleation stage and enable efficient synthesis of supported nanocatalysts.

Reaction mechanism of the Me3AuPMe3-H2 plasma-enhanced ALD process.

The reaction mechanism of the recently reported Me3AuPMe3-H2 plasma gold ALD process was investigated using in situ characterization techniques in a pump-type ALD system. In situ RAIRS and in vacuo XPS measurements confirm that the CH3 and PMe3 ligands remain on the gold surface after chemisorption of the precursor, causing self-limiting adsorption. Remaining surface groups are removed by the H2 plasma in the form of CH4 and likely as PHxMey groups, allowing chemisorption of new precursor molecules during the next exposure. The decomposition behaviour of the Me3AuPMe3 precursor on a Au surface is also presented and linked to the stability of the precursor ligands that govern the self-limiting growth during ALD. Desorption of the CH3 ligands occurs at all substrate temperatures during evacuation to high vacuum, occurring faster at higher temperatures. The PMe3 ligand is found to be less stable on a gold surface at higher substrate temperatures and is accompanied by an increase in precusor decomposition on a gold surface, indicating that the temperature dependent stability of the precursor ligands is an important factor to ensure self-limiting precursor adsorption during ALD. Remarkably, precursor decomposition does not occur on a SiO2 surface, in situ transmission absorption infrared experiments indicate that nucleation on a SiO2 surface occurs on Si-OH groups. Finally, we comment on the use of different co-reactants during PE-ALD of Au and we report on different PE-ALD growth with the reported O2 plasma and H2O process in pump-type versus flow-type ALD systems.

In situ study of the thermal stability of supported Pt nanoparticles and their stabilization via atomic layer deposition overcoating.

Downscaling of supported Pt structures to the nanoscale is motivated by the augmentation of the catalytic activity and selectivity, which depend on the particle size, shape and coverage. Harsh thermal and chemical conditions generally required for catalytic applications entail an undesirable particle coarsening, and consequently limit the catalyst lifetime. Herein we report an in situ synchrotron study on the stability of supported Pt nanoparticles and their stabilization using atomic layer deposition (ALD) as the stabilizing methodology against particle coarsening. Pt nanoparticles were thermally annealed up to 850 °C in an oxidizing environment while recording in situ synchrotron grazing incidence small angle X-ray scattering (GISAXS) 2D patterns, thereby obtaining continuous information about the particle radius evolution. Al2O3 overcoat as a protective capping layer against coarsening via ALD was investigated. In situ data proved that only 1 cycle of Al2O3 ALD caused an augmentation of the onset temperature for particle coarsening. Moreover, the results showed a dependence of the required overcoat thickness on the initial particle size and distribution, being more efficient (i.e. requiring lower thicknesses) when isolated particles are present on the sample surface. The Pt surface accessibility, which is decisive in catalytic applications, was analyzed using the low energy ion scattering (LEIS) technique, revealing a larger Pt surface accessibility for a sample with Al2O3 overcoat than for a sample without a protective layer after a long-term isothermal annealing.

The co-reactant role during plasma enhanced atomic layer deposition of palladium.

Atomic layer deposition (ALD) of noble metals is an attractive technology potentially applied in nanoelectronics and catalysis. Unlike the combustion-like mechanism shown by other noble metal ALD processes, the main palladium (Pd) ALD process using palladium(ii)hexafluoroacetylacetonate [Pd(hfac)2] as precursor is based on true reducing surface chemistry. In this work, a thorough investigation of plasma-enhanced Pd ALD is carried out by employing this precursor with different plasmas (H2*, NH3*, O2*) and plasma sequences (H2* + O2*, O2* + H2*) as co-reactants at varying temperatures, providing insights in the co-reactant and temperature dependence of the Pd growth per cycle (GPC). At all temperatures, films grown with only reducing co-reactants contain a large amount of carbon, while an additional O2* in the co-reactant sequence helps to obtain Pd films with much lower impurity concentrations. Remarkably, in situ XRD and SEM show an abrupt release of the carbon impurities during annealing at moderate temperatures in different atmospheres. In vacuo XPS measurements reveal the remaining species on the as-deposited surface after every exposure. Links are established between the particular surface termination prior to the precursor pulse and the observed differences in GPC, highlighting hydrogen as the key growth facilitator and carbon and oxygen as growth inhibitors. The increase in GPC with temperature for ALD sequences with H2* or NH3* prior to the precursor pulse is explained by an increase in the amount of hydrogen species that reside on the Pd surface which are available for reaction with the Pd(hfac)2 precursor.

Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy.

The thermal and plasma-enhanced atomic layer deposition (ALD) growth of titanium oxide using an alkylamine precursor - tetrakis(dimethylamino)titanium (TDMAT) - was investigated. The surface species present during both the precursor and co-reactant pulse were studied with in situ reflection mid-IR spectroscopy (FTIR) and in vacuo X-ray photoelectron spectroscopy (XPS). The thermal process using H2O vapor proceeds through a typical ligand exchange reaction mechanism. The plasma-enhanced ALD processes using H2O-plasma or O2-plasma exhibit an additional decomposition and combustion reaction mechanism. After the plasma exposure, imine (N[double bond, length as m-dash]C) and isocyanate (N[double bond, length as m-dash]C[double bond, length as m-dash]O) surface species were observed by in situ FTIR. In addition, nitrites (NOx) were detected using in vacuo XPS during the O2-plasma process. This study presents the importance of the use of in situ FTIR and in vacuo XPS as complementary techniques to learn more about the ALD reaction mechanism. While in situ FTIR is very sensitive to changes of chemical bonds at the surface, exact identification and quantification could only be done with the aid of in vacuo XPS.

Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature.

A plasma-enhanced atomic layer deposition (PE-ALD) process to deposit metallic gold is reported, using the previously reported Me3Au(PMe3) precursor with H2 plasma as the reactant. The process has a deposition window from 50 to 120 °C with a growth rate of 0.030 ± 0.002 nm per cycle on gold seed layers, and it shows saturating behavior for both the precursor and reactant exposure. X-ray photoelectron spectroscopy measurements show that the gold films deposited at 120 °C are of higher purity than the previously reported ones (<1 at. % carbon and oxygen impurities and <0.1 at. % phosphorous). A low resistivity value was obtained (5.9 ± 0.3 µΩ cm), and X-ray diffraction measurements confirm that films deposited at 50 and 120 °C are polycrystalline. The process forms gold nanoparticles on oxide surfaces, which coalesce into wormlike nanostructures during deposition. Nanostructures grown at 120 °C are evaluated as substrates for free-space surface-enhanced Raman spectroscopy (SERS) and exhibit an excellent enhancement factor that is without optimization, only one order of magnitude weaker than state-of-the-art gold nanodome substrates. The reported gold PE-ALD process therefore offers a deposition method to create SERS substrates that are template-free and does not require lithography. Using this process, it is possible to deposit nanostructured gold layers at low temperatures on complex three-dimensional (3D) substrates, opening up opportunities for the application of gold ALD in flexible electronics, heterogeneous catalysis, or the preparation of 3D SERS substrates.

Bifunctional earth-abundant phosphate/phosphide catalysts prepared via atomic layer deposition for electrocatalytic water splitting.

The development of active and stable earth-abundant catalysts for hydrogen and oxygen evolution is one of the requirements for successful production of solar fuels. Atomic Layer Deposition (ALD) is a proven technique for conformal coating of structured (photo)electrode surfaces with such electrocatalyst materials. Here, we show that ALD can be used for the deposition of iron and cobalt phosphate electrocatalysts. A PE-ALD process was developed to obtain cobalt phosphate films without the need for a phosphidation step. The cobalt phosphate material acts as a bifunctional catalyst, able to also perform hydrogen evolution after either a thermal or electrochemical reduction step.

Correction: Key role of surface oxidation and reduction processes in the coarsening of Pt nanoparticles.

Correction for 'Key role of surface oxidation and reduction processes in the coarsening of Pt nanoparticles' by Eduardo Solano et al., Nanoscale, 2017, 9, 13159-13170.

Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition.

Synthetic methods that allow for the controlled design of well-defined Pt nanoparticles are highly desirable for fundamental catalysis research. In this work, we propose a strategy that allows precise and independent control of the Pt particle size and coverage. Our approach exploits the versatility of the atomic layer deposition (ALD) technique by combining two ALD processes for Pt using different reactants. The particle areal density is controlled by tailoring the number of ALD cycles using trimethyl(methylcyclopentadienyl)platinum and oxygen, while subsequent growth using the same Pt precursor in combination with nitrogen plasma allows for tuning of the particle size at the atomic level. The excellent control over the particle morphology is clearly demonstrated by means of in situ and ex situ X-ray fluorescence and grazing incidence small angle X-ray scattering experiments, providing information about the Pt loading, average particle dimensions, and mean center-to-center particle distance.

Key role of surface oxidation and reduction processes in the coarsening of Pt nanoparticles.

Particle coarsening is the main cause for thermal deactivation and lifetime reduction of supported Pt nanocatalysts. Here, Atomic Layer Deposition (ALD) was used to prepare a model system of Pt nanoparticles with high control over the metal loading and the nanoparticle size and coverage. A series of samples with distinct as-deposited size and interparticle spacing was annealed under different oxygen environments while Grazing Incidence Small Angle X-ray Scattering (GISAXS) was employed as in situ tool for monitoring the change in average nanoparticle size. The obtained results revealed three morphological stages during the thermal treatment, which can be explained by (I) the formation of a PtO2 shell on stable Pt nanoparticles at low temperature (below 300 °C), (II) the reduction of the PtO2 shell at moderate temperature (300 to 600 °C), creating mobile species that trigger particle coarsening until a steady morphological state is reached, and (III) the evaporation of PtO2 at high temperature (above 650 °C), causing particle instability and coarsening reactivation. The onset temperatures for stages (II) and (III) were found to depend on the initial particle size and spacing as well as on the O2 partial pressure during annealing, and could be summarized in a morphological stability diagram for Pt nanoparticles. The coarsening model indicates an important role for the reduction of the PtO2 shell in inducing particle coarsening. The key role of the reduction process was corroborated through isothermal experiments under decreasing O2 partial pressure and through forced reduction experiments near room temperature via H2 exposure.

Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition.

We report the design of a mobile setup for synchrotron based in situ studies during atomic layer processing. The system was designed to facilitate in situ grazing incidence small angle x-ray scattering (GISAXS), x-ray fluorescence (XRF), and x-ray absorption spectroscopy measurements at synchrotron facilities. The setup consists of a compact high vacuum pump-type reactor for atomic layer deposition (ALD). The presence of a remote radio frequency plasma source enables in situ experiments during both thermal as well as plasma-enhanced ALD. The system has been successfully installed at different beam line end stations at the European Synchrotron Radiation Facility and SOLEIL synchrotrons. Examples are discussed of in situ GISAXS and XRF measurements during thermal and plasma-enhanced ALD growth of ruthenium from RuO4 (ToRuS™, Air Liquide) and H2 or H2 plasma, providing insights in the nucleation behavior of these processes.

Atomic Layer Deposition Route To Tailor Nanoalloys of Noble and Non-noble Metals.

Since their early discovery, bimetallic nanoparticles have revolutionized various fields, including nanomagnetism and optics as well as heterogeneous catalysis. Knowledge buildup in the past decades has witnessed that the nanoparticle size and composition strongly impact the nanoparticle's properties and performance. Yet, conventional synthesis strategies lack proper control over the nanoparticle morphology and composition. Recently, atomically precise synthesis of bimetallic nanoparticles has been achieved by atomic layer deposition (ALD), alleviating particle size and compositional nonuniformities. However, this bimetal ALD strategy applies to noble metals only, a small niche within the extensive class of bimetallic alloys. We report an ALD-based approach for the tailored synthesis of bimetallic nanoparticles containing both noble and non-noble metals, here exemplified for Pt-In. First, a Pt/In2O3 bilayer is deposited by ALD, yielding precisely defined Pt-In nanoparticles after high-temperature H2 reduction. The nanoparticles' In content can be accurately controlled over the whole compositional range, and the particle size can be tuned from micrometers down to the nanometer scale. The size and compositional flexibility provided by this ALD-approach will trigger the fabrication of fully tailored bimetallic nanomaterials, including superior nanocatalysts.