Computational Efficiency of a Modular Reservoir Network for Image Recognition.

Liquid state machine (LSM) is a type of recurrent spiking network with a strong relationship to neurophysiology and has achieved great success in time series processing. However, the computational cost of simulations and complex dynamics with time dependency limit the size and functionality of LSMs. This paper presents a large-scale bioinspired LSM with modular topology. We integrate the findings on the visual cortex that specifically designed input synapses can fit the activation of the real cortex and perform the Hough transform, a feature extraction algorithm used in digital image processing, without additional cost. We experimentally verify that such a combination can significantly improve the network functionality. The network performance is evaluated using the MNIST dataset where the image data are encoded into spiking series by Poisson coding. We show that the proposed structure can not only significantly reduce the computational complexity but also achieve higher performance compared to the structure of previous reported networks of a similar size. We also show that the proposed structure has better robustness against system damage than the small-world and random structures. We believe that the proposed computationally efficient method can greatly contribute to future applications of reservoir computing.

Amphiphobic Septa Enhance the Mechanical Stability of Free-Standing Bilayer Lipid Membranes.

Artificial bilayer lipid membranes (BLMs) provide well-defined systems for investigating the fundamental properties of membrane proteins, including ion channels, and for screening the effect of drugs that act on them. However, the application of this technique is limited due to the low stability and low reconstitution efficiency of the process. We previously reported on improving the stability of BLM based on the fabrication of microapertures having a tapered edge in SiO2/Si3N4 septa and efficient ion channel incorporation based on vesicle fusion accelerated by a centrifugal force. Although the BLM stability and incorporation probability were dramatically improved when these approaches were used, some BLMs were ruptured when subjected to a centrifugal force. To further improve the BLM stability, we investigated the effect of modifying the surface of the SiO2/Si3N4 septa on the stability of BLM suspended in the septa. The modified surfaces were characterized in terms of hydrophobicity, lipophobicity, and surface roughness. Diffusion coefficients of the lipid monolayers formed on the modified surfaces were also determined. Highly fluidic lipid monolayers were formed on the amphiphobic substrates that had been modified with long-chain perfluorocarbons. Free-standing BLMs formed in amphiphobic septa showed a much higher mechanical stability, including tolerance to water movement and applied centrifugal forces with and without proteoliposomes, than those formed in the septa that had been modified with a short alkyl chain. These results demonstrate that highly stable BLMs are formed when the surface of the septa has amphiphobic properties. Because highly fluidic lipid monolayers that are formed on the septa seamlessly connect with BLMs in a free-standing region, the high fluidity of the lipids contributes to decreasing potential damage to BLMs when mechanical stresses are applied. This approach to improve the BLM stability increases the experimental efficiency of the BLM systems and will contribute to the development of high-throughput platforms for functional assays of ion channel proteins.

Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating.

The atomic-layer (AL) doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D) carrier transport system. In this paper, we report carrier properties for B AL-doped Si films with suppressed thermal diffusion. B AL-doped Si films were formed on Si(100) by B AL formation followed by Si cap layer deposition in low-energy Ar plasma-enhanced chemical-vapor deposition without substrate heating. After fabrication of Hall-effect devices with the B AL-doped Si films on unstrained and 0.8%-tensile-strained Si(100)-on-insulator substrates (maximum process temperature 350°C), carrier properties were electrically measured at room temperature. Typically for the initial B amount of 2 × 1014 cm-2 and 7 × 1014 cm-2, B concentration depth profiles showed a clear decay slope as steep as 1.3 nm/decade. Dominant carrier was a hole and the maximum sheet carrier densities as high as 4 × 1013 cm-2 and 2 × 1013 cm-2 (electrical activity ratio of about 7% and 3.5%) were measured respectively for the unstrained and 0.8%-tensile-strained Si with Hall mobility around 10-13 cm2 V-1 s-1. Moreover, mobility degradation was not observed even when sheet carrier density was increased by heat treatment at 500-700 °C. There is a possibility that the local carrier (ionized B atom) concentration around the B AL in Si reaches around 1021 cm-3 and 2-D impurity-band formation with strong Coulomb interaction is expected. The behavior of carrier properties for heat treatment at 500-700 °C implies that thermal diffusion causes broadening of the B AL in Si and decrease of local B concentration.

Atomically controlled processing in silicon-based CVD epitaxial growth.

One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here, we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control in Si-based CVD epitaxial growth. Self-limiting formation of 1-3 atomic layers of group IV or related atoms after thermal adsorption and reaction of hydride gases on Si(1-x)Gex(100) (x = 0-1) surface are generalized based on the Langmuir-type model. Moreover, Si-based epitaxial growth on N, P or C atomic layer formed on Si(1-x)Gex(100) surface is achieved at temperatures below 500 degrees C. N atoms of about 4 x 10(14) cm(-2) are buried in the Si epitaxial layer within about 1 nm thick region. In the Si(0.5)Ge(0.5) epitaxial layer, N atoms of about 6 x 10(14) cm(-2) are confined within about 1.5 nm thick region. The confined N atoms in Si(1-x)Gex preferentially form Si-N bonds. For unstrained Si cap layer grown on top of the P atomic layer formed on Si(1-x)Gex(100) with P atomic amount of below about 4 x 10(14) cm(-2) using Si2H6 instead of SiH4, the incorporated P atoms are almost confined within 1 nm around the heterointerface. It is found that tensile-strain in the Si cap layer growth enhances P surface segregation and reduces the incorporated P atomic amount around the heterointerface. Heavy C atomic-layer doping suppresses strain relaxation as well as intermixing between Si and Ge at the nm-order thick Si(1-x)Gex/Si heterointerface. These results open the way to atomically controlled technology for ULSIs.