Tungsten(VI) selenide tetrachloride, WSeCl4 - synthesis, properties, coordination complexes and application of [WSeCl4(SenBu2)] for CVD growth of WSe2 thin films.

WSeCl4 was obtained in good yield by heating WCl6 and Sb2Se3in vacuo. Green crystals grown by sublimation were shown by single crystal X-ray structure analysis to contain square pyramidal monomers with apical WSe, and powder X-ray diffraction (PXRD) analysis confirmed this to be the only form present in the bulk sample. Density functional theory (DFT) calculations using the B3LYP-D3 functional replicated the structure, identified the key bonding orbitals, and were used to aid assignment of the IR spectrum of WSeCl4. Reaction of WSeCl4 with ligands L gave [WSeCl4(L)] (L = MeCN, DMF, thf, py, OPPh3, 2,2'-bipy, SeMe2, SenBu2), whilst the dimers [(WSeCl4)2(µ-L-L)] were formed with L-L = Ph2P(O)CH2P(O)Ph2, 1,4-dioxane and 4,4'-bipyridyl. The complexes were characterised by microanalysis, IR and 1H NMR spectroscopy, and single crystal X-ray structures determined for [WSeCl4(L)] (L = OPPh3, MeCN, DMF) and [(WSeCl4)2(µ-L-L)] (L-L = 1,4-dioxane, 4,4'-bipyridyl). All except the 2,2'-bipy complex, which is probably seven-coordinate, contain six-coordinate tungsten with the neutral donor trans to WSe. Alkylphosphines, including PMe3 and PEt3, decompose WSeCl4 upon contact, forming phosphine selenides (SePR3). In contrast, the selenoether complexes [WSeCl4(SeMe2)] and [WSeCl4(SenBu2)] were isolated and characterised. The crystal structure of the minor W(VI) by-product, [(WSeCl4)2(µ-SeMe2)], was determined and using SMe2, a few crystals of the W(V) species, [{WCl3(SMe2)}2(µ-Se)(µ-Se2)], were obtained and structurally characterised. The isolated W(VI) complexes are compared with those of WOCl4 and WSCl4 and the combination of experimental and computational data are consistent with WSeCl4 being a weaker Lewis acid and its complexes significantly less stable than those of the lighter analogues, especially in solution. Low pressure chemical vapour deposition (LPCVD) using [WSeCl4(SenBu2)] in the range 660-700 °C (0.1 mmHg) produced highly reflective thin films, which were identified to be WSe2 by grazing incidence X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. XRD analysis of the thinner films revealed them to be highly oriented in the <00l> direction.

Low-Pressure CVD of GeE (E = Te, Se, S) Thin Films from Alkylgermanium Chalcogenolate Precursors and Effect of Deposition Temperature on the Thermoelectric Performance of GeTe.

The homologous series [GenBu3(EnBu)] (E = Te, Se, S; (1), (3) and (4)) and [GenBu2(TenBu)2] (2) have been synthesized as mobile oils in excellent yield (72-93%) and evaluated as single-source precursors for the low-pressure chemical vapor deposition (LPCVD) of GeE thin films on silica. Compositional and structural characterizations of the deposits have been performed by grazing-incidence X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray analysis, and Raman spectroscopy, confirming the phase purity and stoichiometry. Electrical characterization via variable-temperature Hall effect measurements is also reported. Given the strong interest in GeTe and its alloys for thermoelectric applications, variable-temperature Seebeck data were also investigated for a series of p-type GeTe films. The data show that it is possible to tune the thermoelectric response through intrinsic Ge vacancy regulation by varying the deposition temperature, with the highest power factor (40 µW/K2cm@629 K) and effective ZT values observed for the films deposited at higher temperatures.