RESUMEN
The precise arrangement and nature of atoms drive electronic phase transitions in condensed matter. To explore this tenuous link, we developed a true biaxial mechanical deformation device working at cryogenic temperatures, compatible with x-ray diffraction and transport measurements, well adapted to layered samples. Here we show that a slight deformation of TbTe3 can have a dramatic influence on its Charge Density Wave (CDW), with an orientational transition from c to a driven by the a/c parameter, a tiny coexistence region near a = c, and without space group change. The CDW transition temperature Tc displays a linear dependence with a / c - 1 while the gap saturates out of the coexistence region. This behaviour is well accounted for within a tight-binding model. Our results question the relationship between gap and Tc in RTe3 systems. This method opens a new route towards the study of coexisting or competing electronic orders in condensed matter.
RESUMEN
We show that the isotropic conductivity in the normal state of rare-earth tritelluride RTe3 compounds is broken by the occurrence of the unidirectional charge density wave (CDW) in the (a, c) plane below the Peierls transition temperature. In contrast with quasi-one-dimensional systems, the resistivity anomaly associated with the CDW transition is strong in the direction perpendicular to the CDW wave vector Q (a axis) and very weak in the CDW wave vector Q direction (c axis). We qualitatively explain this result by calculating the electrical conductivity for the electron dispersion with momentum-dependent CDW gap as determined by angle-resolved photoemission spectroscopy. Similar measurements of in-plane conductivity may uncover the gap anisotropy in other compounds for which angle-resolved photoemission spectroscopy is not available.
RESUMEN
The dynamical properties of longitudinal and transverse conduction of NbSe3 single crystals have been simultaneously studied when the current is applied along the b axis (chain direction). In the vicinity of the threshold electric field for charge-density-wave sliding, the transverse conduction sharply decreases. When a rf field is applied, voltage Shapiro steps for longitudinal transport are observed as usual but also current Shapiro steps in the transverse direction. The possible mechanisms of this effect are discussed.
RESUMEN
Coherent x-ray diffraction experiments have been used to probe the dynamics of the charge density wave (CDW) in the quasi-1D system NbSe(3). The 2k(F) satellite reflection associated with the CDW has been measured with respect to external dc currents, below and above the depinning current. These measurements illustrate for the first time the extensive behavior of a moving electronic crystal: the creep regime, with nucleation of CDW dislocations, the flow regime, with motional ordering, along with phase slippage and the role of strong pinning due to an extrinsic defect.
RESUMEN
Results of Hall effect measurements are reported both below and above the threshold electric field, E(t), for depinning the low temperature charge density wave (CDW) in NbSe(3) in a wide temperature range. At low electric fields, below E(t), we have observed a change in the sign of the Hall voltage at all temperatures lower than T(p2). Comparison between the Hall effect and the magnetoresistance behavior indicates that the n-type conductivity in the low magnetic field range differs qualitatively from the p-type conductivity in the high field range. We demonstrate that at low temperature the CDW motion significantly alters the Hall voltage. These results indicate that, in NbSe(3), the CDW in the sliding state interacts essentially with holes. Possible mechanisms of this effect are discussed.