Organic Passivation of Deep Defects in Cu(In,Ga)Se2 Film for Geometry-Simplified Compound Solar Cells.

Diverse defects in copper indium gallium diselenide solar cells cause nonradiative recombination losses and impair device performance. Here, an organic passivation scheme for surface and grain boundary defects is reported, which employs an organic passivation agent to infiltrate the copper indium gallium diselenide thin films. A transparent conductive passivating (TCP) film is then developed by incorporating metal nanowires into the organic polymer and used in solar cells. The TCP films have a transmittance of more than 90% in the visible and nearinfrared spectra and a sheet resistance of ~10.5 Ω/sq. This leads to improvements in the open-circuit voltage and the efficiency of the organic passivated solar cells compared with control cells and paves the way for novel approaches to copper indium gallium diselenide defect passivation and possibly other compound solar cells.

Multi-Carrier Generation in Organic-Passivated Black Silicon Solar Cells with Industrially Feasible Processes.

The innate inverse Auger effect within bulk silicon can result in multiple carrier generation. Observation of this effect is reliant upon low high-energy photon reflectance and high-quality surface passivation. In the photovoltaics industry, metal-assisted chemical etching (MACE) to afford black silicon (b-Si) can provide a low high-energy photon reflectance. However, an industrially feasible and cheaper technology to conformally passivate the outer-shell defects of these nanowires is currently lacking. Here, a technology is introduced to infiltrate black silicon nanopores with a simple and vacuum-free organic passivation layer that affords millisecond-level minority carrier lifetimes and matches perfectly with existing solution-based processing of the MACE black silicon. Advancements such as the demonstration of an excellent passivation effect whilst also being low reflectance provide a new technological route for inverse Auger multiple carrier generation and an industrially feasible technical scheme for the development of the MACE b-Si solar cells.

Stable Organic Passivated Carbon Nanotube-Silicon Solar Cells with an Efficiency of 22.

The organic passivated carbon nanotube (CNT)/silicon (Si) solar cell is a new type of low-cost, high-efficiency solar cell, with challenges concerning the stability of the organic layer used for passivation. In this work, the stability of the organic layer is studied with respect to the internal and external (humidity) water content and additionally long-term stability for low moisture environments. It is found that the organic passivated CNT/Si complex interface is not stable, despite both the organic passivation layer and CNTs being stable on their own and is due to the CNTs providing an additional path for water molecules to the interface. With the use of a simple encapsulation, a record power conversion efficiency of 22% is achieved and a stable photovoltaic performance is demonstrated. This work provides a new direction for the development of high-performance/low-cost photovoltaics in the future and will stimulate the use of nanotubes materials for solar cells applications.

Solution processable in situ passivated silicon nanowires.

The 1D confinement of silicon in the form of a nanowire revives its newness with the emergence of new optical and electronic properties. However, the development of a production process for silicon nanowires (SiNWs) having a high quality crystalline core and exhibiting good stability in solution with effective outer-shell defect passivation is still a challenge. In this work, SiNWs are prepared from a silicon wafer using solution processing steps, and importantly outer-shell-defect passivation is achieved by in situ grafting of organic molecules based on thin films. Defect passivation and the high quality of the SiNWs are confirmed with thin films on glass and flexible plastic substrates. A dramatic enhancement in both the fluorescence lifetime and infrared photoluminescence is observed. The in situ organic passivation of SiNWs has potential application in all low-dimensional silicon devices including infrared detectors, solar cells and lithium-ion battery anodes.

Vacuum-Free, Room-Temperature Organic Passivation of Silicon: Toward Very Low Recombination of Micro-/Nanotextured Surface Structures.

Crystalline silicon (c-Si) solar cells remain dominant in the photovoltaic (PV) market because of their cost-effective advantages. However, the requirement for expensive vacuum equipment and the power-hungry thermal budget for surface passivation technology, which is one of the key enablers of the high performance of c-Si solar cells, impede further reductions of costs. Thus, the omission of the vacuum and high-temperature process without compromising the passivation effect is highly desirable due to cost concerns. Here, we demonstrate a vacuum-free, room-temperature organic Nafion thin-film passivation scheme with an effective minority carrier lifetime (τeff) exceeding 9 ms on an n-type c-Si wafer with a resistivity of 1-5 Ω·cm, corresponding to an implied open circuit voltage (i Voc) of 724 mV and upper-limit surface recombination velocity (SRV) of 1.46 cm/s, which is a level that is in line with the hydrogenated amorphous Si film-passivation scheme used in the current PV industry. We find that the Nafion film passivation of Si can be enhanced in an O2 atmosphere and that the Nafion/c-Si interface oxidation should be responsible for the passivation mechanism. This highly effective passivation is also achieved on various micro-/nanotextured Si surface structures from actual production, including a pyramidal surface and nanopore-pyramid hybrid structure with nanopores on the inclined plane of the pyramid. We develop an organic Nafion-passivated n-type back-junction Si solar cell to examine application in a real device. The open circuit voltage ( Voc) of the solar cell with the Nafion passivation layer achieves a clear improvement (30.8 mV) over those without the passivation layer, resulting in an increase (1.5%) in the power conversion efficiency. These results suggest the potential use of these organic electronics with current Si microelectronics and a new strategy for the development of vacuum-free, low-temperature Si-based PVs at low cost.

[The detection of sera S100B and NO of patients with brain injury].

OBJECTIVE: To explore the changes of sera S100B and NO and their significance of patients with brain injury. METHOD: We detected sera S100B and NO level of 30 healthy persons and 108 cases with brain injury by ELISA and method. RESULTS: The sera S100B level of patient group was increased after 12 h brain injury,and sera NO concentrations of serve type were significantly high than control group, P < 0.01. NO concentrations of serve type, middle type and minor type were significantly high than control group, middle type and minor type group. P < 0.05, However, sera NO level of middle type and minor type group of brain injury had no significance than control group, P > 0.05. CONCLUSION: Sera S100B examinations can be indices as diagnosis of early brain injury.

Silicon quantum dot/crystalline silicon solar cells.

Silicon (Si) quantum dot (QD) materials have been proposed for 'all-silicon' tandem solar cells. In this study, solar cells consisting of phosphorus-doped Si QDs in a SiO(2) matrix deposited on p-type crystalline Si substrates (c-Si) were fabricated. The Si QDs were formed by alternate deposition of SiO(2) and silicon-rich SiO(x) with magnetron co-sputtering, followed by high-temperature annealing. Current tunnelling through the QD layer was observed from the solar cells with a dot spacing of 2 nm or less. To get the required current densities through the devices, the dot spacing in the SiO(2) matrix had to be 2 nm or less. The open-circuit voltage was found to increase proportionally with reductions in QD size, which may relate to a bandgap widening effect in Si QDs or an improved heterojunction field allowing a greater split of the Fermi levels in the Si substrate. Successful fabrication of (n-type) Si QD/(p-type) c-Si photovoltaic devices is an encouraging step towards the realization of all-silicon tandem solar cells based on Si QD materials.