RESUMEN
Optical spectroscopy of ultimately thin materials has significantly enhanced our understanding of collective excitations in low-dimensional semiconductors. This is particularly reflected by the rich physics of excitons in atomically thin crystals which uniquely arises from the interplay of strong Coulomb correlation, spin-orbit coupling (SOC), and lattice geometry. Here we extend the field by reporting the observation of room temperature excitons in a material of non-trivial global topology. We study the fundamental optical excitation spectrum of a single layer of bismuth atoms epitaxially grown on a SiC substrate (hereafter bismuthene or Bi/SiC) which has been established as a large-gap, two-dimensional (2D) quantum spin Hall (QSH) insulator. Strongly developed optical resonances are observed to emerge around the direct gap at the K and K' points of the Brillouin zone, indicating the formation of bound excitons with considerable oscillator strength. These experimental findings are corroborated, concerning both the character of the excitonic resonances as well as their energy scale, by ab-initio GW and Bethe-Salpeter equation calculations, confirming strong Coulomb interaction effects in these optical excitations. Our observations provide evidence of excitons in a 2D QSH insulator at room temperature, with excitonic and topological physics deriving from the very same electronic structure.
RESUMEN
Two-dimensional quantum spin Hall (QSH) insulators are a promising material class for spintronic applications based on topologically protected spin currents in their edges. Yet, they have not lived up to their technological potential, as experimental realizations are scarce and limited to cryogenic temperatures. These constraints have also severely restricted characterization of their dynamical properties. Here, we report on the electron dynamics of the novel room-temperature QSH candidate bismuthene after photoexcitation using time- and angle-resolved photoemission spectroscopy. We map the transiently occupied conduction band and track the full relaxation pathway of hot photocarriers. Intriguingly, we observe photocarrier lifetimes much shorter than those in conventional semiconductors. This is ascribed to the presence of topological in-gap states already established by local probes. Indeed, we find spectral signatures consistent with these earlier findings. Demonstration of the large band gap and the view into photoelectron dynamics mark a critical step toward optical control of QSH functionalities.