Pentagonal nanowires from topological crystalline insulators: a platform for intrinsic core-shell nanowires and higher-order topology.

We report on the experimental realization of Pb1-xSnx Te pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability of NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, we show that the interplay between ionic and covalent bonds favors the formation of pentagonal NWs. Additionally, we find that this pentagonal structure is more likely to occur in tellurides than in selenides. The disclination and twin boundary cause the electronic states originating from the NW core region to generate a conducting band connecting the valence and conduction bands, creating a symmetry-enforced metallic phase. The metallic core band has opposite slopes in the cases of Sn and Te twin boundaries, while the bands from the shell are insulating. We finally study the electronic and topological properties of pentagonal NWs unveiling their potential as a new platform for higher-order topology and fractional charge. These pentagonal NWs represent a unique case of intrinsic core-shell one-dimensional nanostructures with distinct structural, electronic and topological properties between the core and the shell region.

Interaction Effects in a 1D Flat Band at a Topological Crystalline Step Edge.

Step edges of topological crystalline insulators can be viewed as predecessors of higher-order topology, as they embody one-dimensional edge channels embedded in an effective three-dimensional electronic vacuum emanating from the topological crystalline insulator. Using scanning tunneling microscopy and spectroscopy, we investigate the behavior of such edge channels in Pb1-xSnxSe under doping. Once the energy position of the step edge is brought close to the Fermi level, we observe the opening of a correlation gap. The experimental results are rationalized in terms of interaction effects which are enhanced since the electronic density is collapsed to a one-dimensional channel. This constitutes a unique system to study how topology and many-body electronic effects intertwine, which we model theoretically through a Hartree-Fock analysis.

Systematic Investigation of the Coupling between One-Dimensional Edge States of a Topological Crystalline Insulator.

The interaction of spin-polarized one-dimensional (1D) topological edge modes localized along single-atomic steps of the topological crystalline insulator Pb_{0.7}Sn_{0.3}Se(001) has been studied systematically by scanning tunneling spectroscopy. Our results reveal that the coupling of adjacent edge modes sets in at a step-to-step distance d_{ss}≤25 nm, resulting in a characteristic splitting of a single peak at the Dirac point in tunneling spectra. Whereas the energy splitting exponentially increases with decreasing d_{ss} for single-atomic steps running almost parallel, we find no splitting for single-atomic step edges under an angle of 90°. The results are discussed in terms of overlapping wave functions with p_{x}, p_{y} orbital character.

Defect-free SnTe topological crystalline insulator nanowires grown by molecular beam epitaxy on graphene.

SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have a cubic rock-salt structure, they grow along the [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with a Dirac dispersion. Thorough high resolution transmission electron microscopy investigations show that the nanowires grow on graphene in the van der Waals epitaxy mode induced when the catalyzing Au nanoparticles mix with Sn delivered from a SnTe flux, providing a liquid Au-Sn alloy. The nanowires are totally free from structural defects, but their {001} sidewalls are prone to oxidation, which points out the necessity of depositing a protective capping layer in view of exploiting the magneto-electric transport phenomena involving charge carriers occupying topologically protected states.

Fragility of the Dirac Cone Splitting in Topological Crystalline Insulator Heterostructures.

The "double Dirac cone" 2D topological interface states found on the (001) faces of topological crystalline insulators such as Pb1-xSnxSe feature degeneracies located away from time reversal invariant momenta and are a manifestation of both mirror symmetry protection and valley interactions. Similar shifted degeneracies in 1D interface states have been highlighted as a potential basis for a topological transistor, but realizing such a device will require a detailed understanding of the intervalley physics involved. In addition, the operation of this or similar devices outside of ultrahigh vacuum will require encapsulation, and the consequences of this for the topological interface state must be understood. Here we address both topics for the case of 2D surface states using angle-resolved photoemission spectroscopy. We examine bulk Pb1-xSnxSe(001) crystals overgrown with PbSe, realizing trivial/topological heterostructures. We demonstrate that the valley interaction that splits the two Dirac cones at each X̅ is extremely sensitive to atomic-scale details of the surface, exhibiting non-monotonic changes as PbSe deposition proceeds. This includes an apparent total collapse of the splitting for sub-monolayer coverage, eliminating the Lifshitz transition. For a large overlayer thickness we observe quantized PbSe states, possibly reflecting a symmetry confinement mechanism at the buried topological interface.

Robust spin-polarized midgap states at step edges of topological crystalline insulators.

Topological crystalline insulators are materials in which the crystalline symmetry leads to topologically protected surface states with a chiral spin texture, rendering them potential candidates for spintronics applications. Using scanning tunneling spectroscopy, we uncover the existence of one-dimensional (1D) midgap states at odd-atomic surface step edges of the three-dimensional topological crystalline insulator (Pb,Sn)Se. A minimal toy model and realistic tight-binding calculations identify them as spin-polarized flat bands connecting two Dirac points. This nontrivial origin provides the 1D midgap states with inherent stability and protects them from backscattering. We experimentally show that this stability results in a striking robustness to defects, strong magnetic fields, and elevated temperature.

Paramagnetism of cobalt-doped ZnO nanoparticles obtained by microwave solvothermal synthesis.

Zinc oxide nanopowders doped with 1-15 mol % cobalt were produced by the microwave solvothermal synthesis (MSS) technique. The obtained nanoparticles were annealed at 800 °C in nitrogen (99.999%) and in synthetic air. The material nanostructure was investigated by means of the following techniques: X-ray diffraction (XRD), helium pycnometry density, specific surface area (SSA), inductively coupled plasma optical emission spectrometry (ICP-OES), extended X-ray absorption fine structure (EXAFS) spectroscopy, scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and with magnetometry using superconducting quantum interference device (SQUID). Irrespective of the Co content, nanoparticles in their initial state present a similar morphology. They are composed of loosely agglomerated spherical particles with wurtzite-type crystal structure with crystallites of a mean size of 30 nm. Annealing to temperatures of up to 800 °C induced the growth of crystallites up to a maximum of 2 µm in diameter. For samples annealed in high purity nitrogen, the precipitation of metallic α-Co was detected for a Co content of 5 mol % or more. For samples annealed in synthetic air, no change of phase structure was detected, except for precipitation of Co3O4 for a Co content of 15 mol %. The results of the magentometry investigation indicated that all as-synthesized samples displayed paramagnetic properties with a contribution of anti-ferromagnetic coupling of Co-Co pairs. After annealing in synthetic air, the samples remained paramagnetic and samples annealed under nitrogen flow showed a magnetic response under the influences of a magnetic field, likely related to the precipitation of metallic Co in nanoparticles.

All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy.

Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated. (In,Ga)As core nanowires were grown at high temperature (500 °C) whereas (Ga,Mn)As shells were deposited on the {11̅00} side facets of the cores at much lower temperature (220 °C). High-resolution transmission electron microscopy images and high spectral resolution Raman scattering data show that both the cores and the shells of the nanowires have wurtzite crystalline structure. Scanning and transmission electron microscopy observations show smooth (Ga,Mn)As shells containing 5% of Mn epitaxially deposited on (In,Ga)As cores containing about 10% of In without any misfit dislocations at the core-shell interface. With the In content in the (In,Ga)As cores larger than 5% the (In,Ga)As lattice parameter is higher than that of (Ga,Mn)As and the shell is in the tensile strain state. Elaborated magnetic studies indicate the presence of ferromagnetic coupling in (Ga,Mn)As shells at the temperatures in excess of 33 K. This coupling is maintained only in separated mesoscopic volumes resulting in an overall superparamagnetic behavior which gets blocked below ∼ 17 K.

The mechanism of Bi nanowire growth from Bi/Co immiscible composite thin films.

Single crystalline Bi nanowires were grown by extrusion from Bi/Co thin films. The films were obtained by thermal evaporation in high vacuum. The average diameter, length and density of obtained nanowires were 100 nm, 30 microm and 6.5 x 10(5) cm(-2), respectively. The non-catalyzed self-organized process of whisker formation on the surface of immiscible composite thin film was exploited for nanowire growth. It was shown that the whiskers had formed during and after a thin film deposition. The value of residual stresses in a whole thin film coating as well as in its bismuth component was measured using X-ray diffraction technique. It was revealed that local compressive stresses, that had induced the whisker growth, had been formed by a segregation of Bi layers into Bi globules. A simple model of the whisker formation to minimize free energy in the Bi/Co system was proposed taking into account interfacial and elastic deformation energies. The obtained results can be utilized for growing of nanowires of other low-melting-point metals and semiconductors from immiscible composite thin films.