RESUMEN
Under continuous-wave laser excitation in a lattice-matched In0.53Ga0.47As/In0.8Ga0.2As0.44P0.56 multi-quantum-well (MQW) structure, the carrier temperature extracted from photoluminescence rises faster for 405 nm compared with 980 nm excitation, as the injected carrier density increases. Ensemble Monte Carlo simulation of the carrier dynamics in the MQW system shows that this carrier temperature rise is dominated by nonequilibrium LO phonon effects, with the Pauli exclusion having a significant effect at high carrier densities. Further, we find a significant fraction of carriers reside in the satellite L-valleys for 405 nm excitation due to strong intervalley transfer, leading to a cooler steady-state electron temperature in the central valley compared with the case when intervalley transfer is excluded from the model. Good agreement between experiment and simulation has been shown, and detailed analysis has been presented. This study expands our knowledge of the dynamics of the hot carrier population in semiconductors, which can be applied to further limit energy loss in solar cells.
RESUMEN
We numerically investigate the impact of electron-phonon scattering on the optical properties of a perovskite material (CH3NH3PbI3). Using nonequilibrium Green function formalism, we calculate the local density of states for several values of the electron-phonon scattering strength. We report an Urbach-like penetration of the density of states in the band gap due to scattering. A physical analytical model allows us to attribute this behavior to a multiphonon process. Values of Urbach energy up to 9.5 meV are obtained, meaning that scattering contribution to the total experimental Urbach energy of 15 meV is quite important. We also show that the open-circuit voltage V oc, for a solar cell assuming such a material as an absorber, depends on the scattering strength. V oc loss increases with the scattering strength, up to 41 mV. Finally, an unexpected result of this study, is that the impact of electron-phonon scattering on Urbach tail and V oc increases with the phonon energy. This low value in perovskite (8 meV) is therefore an advantage for photovoltaic applications.
RESUMEN
The development of high efficiency solar cells relies on the management of electronic and optical properties that need to be accurately measured. As the conversion efficiencies increase, there is a concomitant electronic and photonic contribution that affects the overall performances. Here we show an optical method to quantify several transport properties of semiconducting materials and the use of multidimensional imaging techniques allows decoupling and quantifying the electronic and photonic contributions. Example of application is shown on halide perovskite thin film for which a large range of transport properties is given in the literature. We therefore optically measure pure carrier diffusion properties and evidence the contribution of optical effects such as the photon recycling as well as the photon propagation where emitted light is laterally transported without being reabsorbed. This latter effect has to be considered to avoid overestimated transport properties such as carrier mobility, diffusion length or diffusion coefficient.
RESUMEN
Photovoltaic generation has stepped up within the last decade from outsider status to one of the important contributors of the ongoing energy transition, with about 1.7% of world electricity provided by solar cells. Progress in materials and production processes has played an important part in this development. Yet, there are many challenges before photovoltaics could provide clean, abundant, and cheap energy. Here, we review this research direction, with a focus on the results obtained within a Japan-French cooperation program, NextPV, working on promising solar cell technologies. The cooperation was focused on efficient photovoltaic devices, such as multijunction, ultrathin, intermediate band, and hot-carrier solar cells, and on printable solar cell materials such as colloidal quantum dots.
