As a second-order nonlinear optical phenomenon, the bulk photovoltaic (BPV) effect is expected to break through the Shockley-Queisser limit of thermodynamic photoelectron conversion and improve the energy conversion efficiency of photovoltaic cells. Here, we have successfully induced a strong flexo-photovoltaic (FPV) effect, a form of BPV effect, in strained violet phosphorene nanosheets (VPNS) by utilizing strain engineering at the h-BN nanoedge, which was first observed in nontransition metal dichalcogenide (TMD) systems. This BPV effect was found to originate from the disruption of inversion symmetry induced by uniaxial strain applied to VPNS at the h-BN nanoedge. We have revealed the intricate relationship between the bulk photovoltaic effect and strain gradients in VPNS through thickness-dependent photovoltaic response experiments. A bulk photovoltaic coefficient of up to 1.3 × 10-3 V-1 and a polarization extinction ratio of 21.6 have been achieved by systematically optimizing the height of the h-BN nanoedge and the thickness of VPNS, surpassing those of reported TMD materials (typically less than 3). Our results have revealed the fundamental relationship between the FPV effect and the strain gradients in low-dimensional materials and inspired further exploration of optoelectronic phenomena in strain-gradient engineered materials.
Strain engineering is the most effective method to break the symmetry of the graphene lattice and achieve graphene band gap tunability. However, a critical strain (>20%) is required to open the graphene band gap, and it is very difficult to achieve such a large strain. This limits the development of experimental research and optoelectronic devices based on graphene strain. In this work, we report a method for preparing large-strain graphene superlattices via surface energy engineering. The maximum strain of the curved lattice could reach 50%. In particular, our pioneering work reports the behavior of an ultrafast (as short as 6 ps) photoresponse in a strained folded graphene superlattice. The photocurrent map shows a large increase (up to 102) of the photoresponsivity in the tensile graphene lattice, which is generated by the interaction between the strained and pristine graphene. Through Raman spectroscopy, Kelvin probe force microscopy, and high-resolution transmission electron microscopy, we demonstrate that the ultrathreshold strain in the graphene bends triggers the opening of the graphene band gap and results in a unique photovoltaic effect. This work deepens the understanding of the strain-induced change of the photoelectrical properties of graphene and proves the potential of strained graphene as a platform for the generation of novel high-speed, miniaturized graphene-based photodetectors.
Applied strain introduces significant changes in the carbon-carbon bond of graphene and thereby forms electronic superlattices. The electron/phonon coupling and existence of pseudogauge fields within these superlattices render unique electronic and magnetism properties. However, the interfacial interactions between strained and pristine graphene have rarely been studied. Herein, we report a prominent increase in photocurrent at the interface between pristine graphene and the strain-induced superlattice (i.e., the graphene wrinkle). The photocurrent distribution indicates a large increase in the bending lattice of graphene. These results demonstrate that the photocurrent enhancement is due to the difference in the Seebeck coefficient between pristine graphene and deformed superlattices, resulting in a significant increase in the photothermoelectric effect at the interface.
