Polarization-insensitive local-oscillator-carrier loopback modulation for a cost-effective and high-port-count wavelength-routing optical switch.

A wavelength-routing optical switch uses a wavelength-tunable laser at each input port, and this transmitter implements output port selection by tuning the wavelength that is associated with each output port. With coherent transmission, loopback modulation of a local oscillator (LO) carrier generated at the output port can eliminate the need for a wavelength-tunable laser. However, loopback modulation can be unstable since the power fluctuates because fiber traversal by the light creates polarization rotation. Here, we propose a simple polarization-alignment circuit and verify its effectiveness in creating a high-port-count optical switch system. The proposed circuit consists of passive components and aligns the polarization state of the supplied LO carrier to be linearly polarized along the x-direction of a TE-input dual-polarization (DP) IQ modulator. The circuit is shown to yield stable modulation with Q-variation of less than 0.8 dB, regardless of any birefringence along the transmission path. The proposal's effectiveness is verified in optical switch system experiments with DP-QPSK signals; 1,856 × 1,856 switch scale is achieved with loopback modulation.

Design and verification of a LO bank enabled by fixed-wavelength lasers and fast tunable silicon ring filters for creating large scale optical switches.

The fast and widely tunable wavelength bank is a key enabler in creating wavelength-routing optical switches that do not use fast wavelength tunable lasers. A cost-effective design criterion needs to be developed before it can be applied to intra data center networks. In this paper, we develop a systematic method for designing a wavelength bank that yields high port-count and fast wavelength-routing optical switches for intra data center application. The wavelength bank is created with fixed-wavelength laser sources and wavelength-tunable filters with rapid wavelength selectivity. To optimize the optical switching system that uses the wavelength bank for supplying local oscillator (LO) lights for coherent detection, various parameters are analyzed, including effective bandwidth, laser output power, loss distribution, splitter port count, and optical amplifier gain. We carry out numerical simulations for optimizing the tradeoff between system performance and cost. To verify the designed wavelength bank, a silicon ring filter is newly fabricated with an average fiber-to-fiber insertion loss of 5.3 dB over a 22-nm bandwidth. Using 256-Gb/s DP-QPSK signals, experiments demonstrate a 1,024×1,024 optical switch that uses a fabricated silicon ring filter. The effectiveness of the scalable and fast-tunable LO bank is verified by achieving 262.1-Tb/s switch throughput with switching time under 18 µs.

Allo-anti-M: Detection peaks around 2 years of age, but may be attenuated by red blood cell transfusion.

BACKGROUND: Anti-M is frequently observed as a naturally occurring antibody of little clinical significance. Naturally occurring anti-M is often found in children although the specific triggers of production, persistence, and evanescence of anti-M have yet to be elucidated. METHODS: In a retrospective, multicenter, nationwide cohort survey conducted from 2001 to 2015, alloantibody screening was performed before and after transfusion in 18,944 recipients younger than 20 years. Recipients were categorized into six cohorts based on their age at transfusion; within and among these cohorts, allo-anti-M was analyzed in regard to its production, persistence, and evanescence. RESULTS: In 44 patients, anti-M detected before and/or after transfusion was an age-related phenomenon, with a median age of 2 years and an interquartile range of 1-3 years; anti-M was most frequently detected in a cohort of children 1 to <5 years (0.77%, 31 of 4035). At least five patients were presumed to have concurrent infections. Among 1575 adolescents/young adults (15 to <20 years), no anti-M was detected. Of 29 patients with anti-M prior to transfusion, the antibody fell to undetectable levels in 17 recipients (89.5%, of whom at least 13 received only M-negative red cells) after anywhere from 5 days to 5.8 years; anti-M persisted in 2, and was not tested in 10. Only 15 recipients (0.08%) produced new anti-M after transfusion. CONCLUSION: Naturally occurring anti-M is a phenomenon of younger ages, predominantly between 1 and 3 years. After transfusion, it often falls to undetectable levels.

2 × 2 16-ch silicon photonics wavelength-selective switch based on waveguide gratings.

We demonstrate a 2 × 2 16-ch silicon photonics wavelength-selective switch consisting of contra-directional couplers and thermo-optic Mach-Zehnder switches. The contra-directional couplers are based on sidewall corrugated Bragg gratings with an unlimited free spectral range and thus enable the device to operate over a very wide wavelength range of the C- and L-band. We obtain a fiber-to-fiber insertion loss of 9.2 dB, an on-chip loss of 5.4 dB, a 3-dB bandwidth of 4.2 nm, a bar-port extinction of 15.0 dB, and a cross-port extinction of 23.0 dB, all in 16-ch average. An average trimming power for the bar states and an average switching power for the cross states are 3.8 mW (σ = 2.3 mW) and 15.6 mW (σ = 2.1 mW), respectively. The wavelength dependence of the spectral responses and the resonant effect from the apodization are discussed in detail to show how to further improve the spectral performance.

Inter-layer light transition in hybrid III-V/Si waveguides integrated by µ-transfer printing.

We demonstrate low-loss and broadband light transition from III-V functional layers to a Si platform via two-stage adiabatic-crossing coupler waveguides. A 900-µm-long and 2.7-µm-thick III-V film waveguide consisting of a GaInAsP core and InP cladding layers is transferred onto an air-cladding Si photonic chip by the µ-transfer printing (µ-TP) method. An average optical coupling loss per joint of 1.26 dB is obtained in C + L telecommunication bands (1530-1635 nm). The correlation between alignment offset and measured optical coupling loss is discussed with the frequency distribution of µ-TP samples. We also performed a photoluminescence measurement to investigate the material properties in the GaInAsP layer to see if they are distorted by the strong bending stress produced during the pick-up and print steps of the µ-TP process. The peak intensity reduction of 80-90% and a wavelength shift of 0-5 nm (blue shift) were observed after the process. The series of fundamental studies presented here, which combine multiple analyses, contribute to improving our understanding of III-V/Si photonic integration by µ-TP.

Simple and fully CMOS-compatible low-loss fiber coupling structure for a silicon photonics platform.

A simple low-loss fiber coupling structure consisting of a Si inverted-taper waveguide and a 435 nm wide and 290 nm thick SiN waveguide was fabricated with fully complementary metal-oxide semiconductor (CMOS)-compatible processes. The small SiN waveguide can expand to the optical field corresponding to a fiber with a mode-field diameter of 4.1 µm. The fiber-to-chip coupling losses were 0.25 and 0.51 dB/facet for quasi-TE and quasi-TM modes, respectively, at a 1550 nm wavelength. Polarization-dependent losses of the conversion in the Si-to-SiN waveguide transition and the fiber-to-chip coupling were less than 0.3 and 0.5 dB, respectively, in the wavelength range of 1520-1580 nm.

SiN/Si double-layer platform for ultralow-crosstalk multiport optical switches.

We experimentally demonstrate a double-layer platform of silicon nitride and silicon for ultralow-crosstalk multiport optical switches. By using a silicon nitride overpass with a large gap of 1.5 µm, we achieve a crosstalk of less than -50 dB and -45 dB almost entirely in the C-band for 4 × 4 and 16 × 16 switches, respectively. To demonstrate the scalability of the platform, we also measured a 32 × 32 passive test device and show that a worst-case crosstalk of less than -50 dB is feasible with appropriate gate switches.

Ultra-compact silicon photonics switch with high-density thermo-optic heaters.

Miniaturization of silicon photonics switches is essential for both dense integration and low-loss operation. However, it has remained unclear how small the switches can be made while using thermo-optic (TO) element switches. In this paper, the minimum possible distance between adjacent TO phase shifter arms was first examined. Next, the architecture for a switch matrix for the high-density arrangement of TO switches that includes multi-layer electrical wirings for compact electrical wire-out was proposed and demonstrated. As a result, we achieved 1/23 miniaturization of an 8 × 8 silicon photonics switch for the PIC part when compared with our previous design.

Integrated silicon photonic wavelength-selective switch using wavefront control waveguides.

A wavelength selective switch (WSS) can route optical signals into any of output ports by wavelength, and is a key component of the reconfigurable optical add/drop multiplexer. We propose a wavefront control type WSS using silicon photonics technology. This consists of several arrayed waveguide gratings sharing a large slab waveguide, wavefront control waveguides and distributed Bragg reflectors. The structure, design method, operating principle, and scalability of the WSS are described and discussed. We designed and fabricated a 1 × 2 wavefront control type WSS using silicon waveguides. This has 16 channels with a channel spacing of 200 GHz. The chip size is 5 mm × 10 mm. The switching operation was achieved by shifting the phase of the light propagating in each wavefront control waveguide, and by controlling the propagation direction in the shared large slab waveguide. Our WSS has no crossing waveguide, so the loss and the variation in loss between channels were small compared to conventional waveguide type WSSs. The heater power required for switching was 183 mW per channel, and the average extinction ratios routed to Output#1 and Output#2 were 9.8 dB and 10.2 dB, respectively.

Reconfigurable all-optical on-chip MIMO three-mode demultiplexing based on multi-plane light conversion.

We present, to the best of our knowledge, the first experimental demonstration of reconfigurable all-optical on-chip multi-input-multi-output three-mode demultiplexing based on multi-plane light conversion. The demultiplexer consists of cascaded phase shifter arrays and multimode interference couplers integrated on a compact silicon chip. By optimizing the phase shifters, reconfigurable three-mode demultiplexing is experimentally realized with wavelength-dependent loss of less than 3 dB and modal crosstalk of less than -10 dB over a 23 nm optical bandwidth. Error-free mode demultiplexing of 40 Gbps non-return-to-zero signal is also demonstrated.

Non-duplicate polarization-diversity 8 × 8 Si-wire PILOSS switch integrated with polarization splitter-rotators.

We demonstrate a fully integrated polarization-diversity 8 × 8 thermo-optic Si-wire switch that uses only a single path-independent insertion loss (PILOSS) switch matrix. All input/output ports of the PILOSS switch matrix are uniquely assigned for polarization diversity without switch duplication. To integrate polarization splitter-rotators on a chip, we propose a compact path-length-equalized polarization-diversity switch configuration. Polarization-dependent loss (PDL) and differential group delay (DGD) are minimized. The 8 × 8 switch is fabricated by the CMOS-compatible fabrication process on 300-mm diameter wafer and additional etching of upper cladding after dicing. The chip size is 7 × 10.5 mm2. A PDL of 2 dB and a DGD of 1.5 ps are achieved. The crosstalk in the worst-case scenario is -20 dB in the full C-band.

Broadband silicon photonics 8 × 8 switch based on double-Mach-Zehnder element switches.

We fabricated and characterized a silicon photonics 8 × 8 strictly non-blocking optical switch based on double-Mach-Zehnder (MZ) element switches. The double-MZ switches, each of which consisted of an intersection and two asymmetric MZ switches, enabled the suppression of crosstalk across a wide wavelength range. The 8 × 8 switch exhibited an average fiber-to-fiber insertion loss of 11.2 dB and -20 dB crosstalk in a bandwidth wider than 30 nm. Furthermore, we constructed an 8 × 8 polarization-diversity switch by using two 8 × 8 switches and demonstrated 32-Gbaud dual-polarization, quadrature-phase-shift-keying, four-channel wavelength-division-multiplexed signal transmission without significant signal degradation.

Novel polarization diversity without switch duplication of a Si-wire PILOSS optical switch.

We demonstrate the compact polarization diversity based on the bidirectional full-port use of a path-independent-insertion-loss (PILOSS) optical switch. A polarization-diversity 4 × 4 strictly non-blocking optical switch is developed using a single thermooptic PILOSS Si-wire switch and fiber-based polarization beam splitters (PBSs) and combiners (PBCs). We measure characteristics of the switch and confirm that the proposed configuration demonstrates the performance in the insertion loss, polarization-dependent loss (PDL), and differential group delay (DGD) comparable with that of a conventional polarization-diversity 4 × 4 PILOSS switch using double switch elements. On the other hand, higher crosstalk is observed. The crosstalk increase is associated with the backward crosstalk at a waveguide intersection based on a directional coupler. The effect of the backward crosstalk on the total crosstalk is estimated, and future prospects are discussed.

[Epidemiological Survey of the Extended-spectrum ß-lactamase-producing Bacteria in Hospitals and Nursing Homes in Morioka Secondary Medical Area Zone of Iwate Prefecture].

The spread of ESBL-producing bacteria (ESBLs) in local communities is a crucially important issue related to infection control. We investigated the relevance of isolation of ESBLs and the risk factors influencing the isolation rates of these organisms at medical facilities (4 rural hospitals, A-D; 4 nursing homes, a-d) located in the Morioka medical area. The isolation rates of ESBLs at 4 hospitals were estimated from the patient medical records from April 2013 to March 2014. Also, ESBLs were isolated from stool samples from residents in 4 nursing homes during almost the same period, and were analyzed to ascertain their genotypes. Furthermore, we compared the isolation rates of ESBLs among four hospitals to determine the influence of use of third-generation cephalosporins and alcohol-based hand rubs, and also among four nursing homes to identify the clinical backgrounds of the nursing home residents influencing the isolation rates. The isolation rates of ESBLs in hospitals and nursing homes were 13.3% (3.6-25.0%) and 9.3% (3.4-21.0%), respectively. Hospital B, which had the highest isolation rate of ESBLs, showed the highest rate of use of third-generation cephalosporins. On the other hand, Hospital A, with a lower isolation rate of ESBLs, showed the highest frequency of use of alcohol rubs. The rate of use of enteral nutrition was significantly higher in the nursing homes with higher isolation rate of ESBLs than those with lower isolation rates (odds ratio 2.71, p < 0.05). Nursing home c, with a significantly higher isolation rate of ESBLs, showed higher usage of adult diapers as well as higher rates of residents with recent hospitalization and high-level care. All ESBLs (13 Escherichia coli) isolated from nursing home c showed the same genotype: CTX-M-3. Although numerous ESBLs were isolated from the hospitals and nursing homes investigated in this study, the isolation rates of ESBLs and the clinical backgrounds of the patients differed greatly among the medical facilities in the same area. Furthermore, as patients and residents were transferred reciprocally among the hospitals and nursing homes, it was suggested that infection control for ESBLs at any individual facility alone was not sufficient and also that cooperative education and information sharing on ESBLs among facilities in the same area might be important.

Acute pancreatitis-induced thrombotic thrombocytopenic purpura with recurrent acute pancreatitis.

Recent successive reports on acute pancreatitis-induced thrombotic thrombocytopenic purpura (TTP) have revealed that TTP-related microvascular damage is an aggravating factor of acute pancreatitis. Here, we report the case of a 26-year-old man diagnosed with acute pancreatitis due to high alcohol consumption. The patient was unconscious as he had taken an overdose of medication, and presented with fever and renal failure due to acute pancreatitis on admission. Although the pancreatitis subsequently improved, the symptoms were still observed; on the next day, he exhibited hemoglobinuria, anemia, and thrombocytopenia. Moreover, general blood examinations indicated the presence of schistocytes and reduced activity of ADAMTS13 (a disintegrin-like metalloproteinase with thrombospondin type 1 motif 13) to 47 %. Thus, the patient was diagnosed with TTP, and plasma exchange was performed. After the development of TTP, the acute pancreatitis recurred, but a severe pathogenesis was prevented by plasma exchange. Thus, ADAMTS13 activity may be useful for predicting a severe pathogenesis of acute pancreatitis. In ADAMTS13-deficient cases, plasma exchange may be an effective technique for preventing aggravation of acute pancreatitis.

[Haplotype Analysis of Coagulation Factor VII Gene in a Patient with Congenital Coagulation Factor VII Deficiency with Heterozygous p.Arg337Cys Mutation and o.Aro413Gin Polymorphism..]

Congenital coagulation factor VII (FVII) deficiency is a rare hemorrhagic disease with an autosomal reces- sive inheritance pattern. We analyzed coagulation factor VII gene (F7) of a patient with FVII deficiency and used expression studies to investigate the effect of a missense mutation on FVII secretion. The proband, a 69-year-old Japanese woman, had a history of postpartum bleeding and excessive bleeding after dental extrac- tion. She was found to have mildly increased PT-INR (1.17) before an ophthalmic operation. FVII activity and antigen were reduced (29.0% and 32.8%). Suspecting that the proband was FVII deficient, we analyzed F7 of the patient. Sequence analysis revealed that the patient was heterozygous for a point mutation (p.Arg337Cys) in the catalytic domain and polymorphisms: the decanucleotide insertion at the promoter re- gion, dimorphism (c.525C >T) in exon 5, and p.Arg413Gln in exon 8. Haplotype analysis clarified that p.Arg337Cys was located on the p.Arg413 allele (Ml allele). The other allele had the p.Arg413Gln polymor- phism(M2 allele) which is known to produce less FVII. Expression studies revealed that p.Arg337Cys causes impairment of FVII secretion. Insufficient secretion of FVII arising from both the p.Arg337Cys/M1 allele and the p.Arg337/M2 allele might lower the FVII level of this patient(<50%). The FVII level in a heterozygous FVII deficient patient might be influenced by F7 polymorphisms on the normal allele. There- fore, genetic analyses are important for the diagnosis of heterozygous FVII deficiency.

Ultra-compact 32 × 32 strictly-non-blocking Si-wire optical switch with fan-out LGA interposer.

We demonstrate a 32 × 32 path-independent-insertion-loss optical path switch that integrates 1024 thermooptic Mach-Zehnder switches and 961 intersections on a small, 11 × 25 mm2 die. The switch is fabricated on a 300-mm-diameter silicon-on-insulator wafer by a complementary metal-oxide semiconductor-compatible process with advanced ArF immersion lithography. For reliable electrical packaging, the switch chip is flip-chip bonded to a ceramic interposer that arranges the electrodes in a 0.5-mm pitch land grid array. The on-chip loss is measured to be 15.8 ± 1.0 dB, and successful switching is demonstrated for digital-coherent 43-Gb/s QPSK signals. The total crosstalk of the switch is estimated to be less than -20 dB at the center wavelength of 1545 nm. The bandwidth narrowing caused by dimensional errors that arise during fabrication is discussed.

Ultra-high-extinction-ratio 2 × 2 silicon optical switch with variable splitter.

We demonstrate a record-high extinction-ratio of 50.4 dB in a 2 × 2 silicon Mach-Zehnder switch equipped with a variable splitter as the front 3-dB splitter. The variable splitter is adjusted to compensate for the splitting-ratio mismatch between the front and rear 3-dB splitters. The high extinction ratio does not rely on waveguide crossings and meets a strong demand in applications to multiport circuit switches. Large fabrication tolerance will make the high extinction ratio compatible with a volume production with standard complementary metal-oxide semiconductor fabrication facilities.

An assessment of urea-formaldehyde fertilizer on the diversity of bacterial communities in onion and sugar beet.

The impact of a urea-formaldehyde (UF) fertilizer on bacterial diversity in onion bulbs and main roots of sugar beet were examined using a 16S rRNA gene clone library. The UF fertilizer markedly increased bacterial diversity in both plants. The results of principal coordinates analysis (PCoA) revealed that nearly 30% of the variance observed in bacterial diversity in both the onion and sugar beet was attributed to the fertilization conditions and also that the community structures in both plants shifted unidirectionally in response to the UF fertilizer.

Ultra-compact 8 × 8 strictly-non-blocking Si-wire PILOSS switch.

We report on a path-independent insertion-loss (PILOSS) 8 × 8 matrix switch based on Si-wire waveguides, which has a record-small footprint of 3.5 × 2.4 mm2. The PILOSS switch consists of 64 thermooptic Mach-Zehnder (MZ) switches and 49 low-crosstalk intersections. Each of the MZ switches and intersections employs directional couplers, which enable the composition of a low loss PILOSS switch. We demonstrate successful switching of digital-coherent 43-Gbps QPSK signal.