RESUMEN
We report multi-level modulation in polarization-independent surface-normal electro-absorption modulators (SNEAMs). Four-level pulse amplitude modulation (PAM-4) at a line rate of 44 Gb/s is demonstrated on a fully packaged SNEAM with a 30 µm active area diameter and a 14 GHz electro-optic bandwidth. High-capacity PAM-4 transmission at 112 and 160 Gb/s is demonstrated on an unpackaged SNEAM chip, with a 15 µm active area diameter and ultrawide electro-optic bandwidth (â«65GHz). Fiber transmission is investigated for direct detection link lengths up to 23 km at 44 Gb/s and 2 km at 112 and 160 Gb/s, the highest multi-level modulation rates achieved on a SNEAM.
RESUMEN
Integrated semiconductor lasers on silicon are one of the most crucial devices to enable low-cost silicon photonic integrated circuits for high-bandwidth optic communications and interconnects. While optical amplifiers and lasers are typically realized in III-V waveguide structures, it is beneficial to have an integration approach which allows flexible and efficient coupling of light between III-V gain media and silicon waveguides. In this paper, we propose and demonstrate a novel fabrication technique and associated transition structure to realize integrated lasers without the constraints of other critical processing parameters such as the starting silicon layer thicknesses. This technique employs epitaxial growth of silicon in a pre-defined trench with taper structures. We fabricate and demonstrate a long-cavity hybrid laser with a narrow linewidth of 130 kHz and an output power of 1.5 mW using the proposed technique.
