RESUMEN
A high-quality HfGeOx interfacial layer (IL) was formed in a HfO2/Al2O3/HfO2/GeOx gate stack through thermal annealing. The diffusing of GeO into the HfO2 layer led to the mixing of the GeOx and HfO2 layers, as identified through energy-dispersive X-ray Spectroscopy (EDX). X-ray photo-electron spectroscopy (XPS) data for HfGeOx IL confirmed the formation of Ge-O-Hf bonds owing to the induced shift of the Ge3dox spectra to lower binding energies. The electrical and reliability data indicated that the capacitor with HfGeOx IL presented not only lower interface states density (Dit, approximately 7 × 1011 eV-1cm-2) but also less Dit increment (approximately 3 × 1011 eV-1cm-2) after stressing than did the capacitor without the HfGeOx IL. Moreover, the Ge p-metal-oxide-semiconductor field-effect transistor HfGeOx IL exhibited a high effective hole mobility (approximately 704 cm2/V s).
RESUMEN
In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si) through microwave annealing (MWA) ranging from 200 to 470 °C for 150 s in N2 ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs) and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390 °C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (ION/IOFF) ratio of ~3 × 105. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing.
