RESUMEN
Nanostructuring in α-Cu2Se while optimizing carrier concentration holds the promise of realizing further high thermoelectric performance at near room temperature. Nevertheless, controlling the amounts of Cu vacancies, which work as acceptors, in nanostructures is considerably more intricate than in bulk materials. Hence, controlling the amounts of Cu vacancies while maintaining the α-phase and nanostructure shape poses a formidable challenge. In this study, we synthesized Cu2+x Se nanowires (NWs) with various amounts of Cu vacancies at room temperature by the photoreduction method and investigated their thermoelectric properties. Cu2+x Se NWs exhibited a comparable thermoelectric power factor to that of the polycrystalline films fabricated at higher temperature. The achievement of the high power factor despite low-temperature fabrication is attributed to the precise synthesis of Cu2+x Se NWs with various amounts of Cu vacancies. We also investigated the reaction process of Cu2.00Se NWs in detail by observing the reaction intermediates. It was found that photoreduction occurred with Cu2+ ions adsorbed on Se NWs, leading to the reaction of Cu2+ ions and Se NWs without Cu deficiency. Namely, this photoreduction under the adsorbed conditions realized the control of Cu vacancies in Cu2+x Se NWs.
RESUMEN
Thermoelectric power generators require semiconductor materials with controlled phonon and free charge carrier transport properties. This could be achieved by changing their molecular and lattice dynamics through introducing/controlling structural imperfections (defects engineering). The structural imperfections such as point defects and compositional segregations in a multicomponent alloy are observed experimentally, and their impact on electron and phonon transport properties was explained. The thermoelectric properties of a III-V ternary alloy InGaSb was improved by the presence of point defects and compositional segregations. The compositions were segregated randomly, and they had a major impact on the phonon contribution to the thermal conductivity. The point defects affected electrical resistivity, and the Seebeck coefficient was influenced by carrier concentration. The figure of merit (ZT) of In0.95Ga0.05Sb is enhanced to 0.62 at 573 K, and it is the highest among any other reported values of binary/ternary III-V semiconductor alloys. The enhancement in the ZT of InGaSb from the viewpoints of point defects and compositional segregations are explained. This experimental defect engineering study could be helpful to understand and improve the thermoelectric properties of many other crystalline materials.
RESUMEN
Resonant and constant-initial state photoemission spectroscopies using synchrotron radiation were applied to investigate the valence-band electronic structure of a semi-conducting ß-type iron-disilicide (ß-FeSi(2)) thin film. The results clearly indicated that the component elements, iron (Fe) and silicon (Si), contribute differently to the valence band features; the Fe 3d orbitals mainly concentrate in the top region of the valence band while the Si 3s and 3p orbitals spread over the wide region of the valence band. The ß-FeSi(2) thin film showed a typical p-type semi-conducting nature with a work function of 4.78 eV. The ß-FeSi(2) film showed the Fe M(1)VV Auger lines around the kinetic energy of 88 eV. It would be expected from these observations that there exist strong interactions between iron and silicon atoms in the ß-FeSi(2) film resulting in orbital mixing and band formation.
RESUMEN
A ternary type-I Si clathrate K(8)Ga(8)Si(38) has been revealed to be an indirect band gap semiconducting material with an energy gap (E(g)) of approximately 0.10 eV, which is much smaller than the calculated E(g) value that is 0.15 eV wider than E(g) of elemental Si with the diamond-type structure.
