Temperature-independent lasing wavelength of highly stacked InAs quantum dot laser fabricated on InP(311)B substrate with Bi irradiation.

In this study, the effects of bismuth (Bi) irradiation on InAs quantum dot (QD) lasers operating in the telecommunication wavelength band were investigated. Highly stacked InAs QDs were grown on an InP(311)B substrate under Bi irradiation, and a broad-area laser was fabricated. In the lasing operation, the threshold currents were almost the same, regardless of Bi irradiation at room temperature. These QD lasers were operated at temperatures between 20 and 75°C, indicating the possibility of high-temperature operation. In addition, the temperature dependence of the oscillation wavelength changed from 0.531 nm/K to 0.168 nm/K using Bi in the temperature range 20-75°C.

High-speed fiber-wireless-fiber system in the 100-GHz band using a photonics-enabled receiver and optical phase modulator.

This Letter describes a high-speed yet simple fiber-wireless-fiber system in the 100-GHz band using a photonics-enabled receiver and optical phase modulator. At the antenna site, a millimeter-wave signal is down-converted to the microwave band using an electronic mixer with a local oscillator signal generated remotely using photonic technology. The down-converted signal is converted to an optical signal using an optical phase modulator. At the receiver, a simple direct detection of the phase-modulated signal is performed using optical filtering technology. To demonstrate the proof-of-concept, we successfully transmitted a 64-quadrature amplitude modulation orthogonal frequency-division multiplexing signal with a record line rate of 80 Gb/s (net data rate of 55 Gb/s) over a system consisting of two radio-over-fiber links and a 5 m wireless link in the 100-GHz band. The proposed system with simple antenna sites and optical transceivers can facilitate the deployment of ultra-dense small cells in high-frequency bands in beyond-5G networks.