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Electronic nematicity, where strong correlations drive electrons to align in a way that lowers the crystal symmetry, is ubiquitous among unconventional superconductors. Understanding the interplay of such a nematic state with other electronic phases underpins the complex behavior of these materials and the potential for tuning their properties through external stimuli. Here, we report magnetic field-induced spin nematicity in a model system tetragonal FeTe, the parent compound of iron chalcogenide superconductors, which exhibits a bicollinear antiferromagnetic order. The studies were conducted on epitaxial FeTe thin films grown on SrTiO3(001) substrates by molecular beam epitaxy, where the bicollinear antiferromagnetic order was confirmed by in situ atomic resolution scanning tunneling microscopy imaging. A 2-fold anisotropy is observed in in-plane angle-dependent magnetoresistance measurements, indicative of magnetic field-induced nematicity. Such 2-fold anisotropy persists up to 300 K, well-above the bicollinear antiferromagnetic ordering temperature of 75 K, indicating a magnetic field-induced spin nematic phase up to room temperature in the antiferromagnet FeTe.
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The ability to assemble layers of two-dimensional (2D) materials to form permutations of van der Waals heterostructures provides significant opportunities in materials design and synthesis. Interlayer interactions can enable desired properties and functionality, and understanding such interactions is essential to that end. Here we report formation of interlayer exciton-phonon bound states in Bi2Se3/WS2 heterostructures, where the Bi2Se3 A1(3) surface phonon, a mode particularly susceptible to electron-phonon coupling, is imprinted onto the excitonic emission of the WS2. The exciton-phonon bound state (or exciton-phonon quasiparticle) presents itself as evenly separated peaks superposed on the WS2 excitonic photoluminescence spectrum, whose periodic spacing corresponds to the A1(3) surface phonon energy. Low-temperature polarized Raman spectroscopy of Bi2Se3 reveals intense surface phonons and local symmetry breaking that allows the A1(3) surface phonon to manifest in otherwise forbidden scattering geometries. Our work advances knowledge of the complex interlayer van der Waals interactions and facilitates technologies that combine the distinctive transport and optical properties from separate materials into one device for possible spintronics, valleytronics, and quantum computing applications.
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Oxygen conductors and transporters are important to several consequential renewable energy technologies, including fuel cells and syngas production. Separately, monolayer transition-metal dichalcogenides (TMDs) have demonstrated significant promise for a range of applications, including quantum computing, advanced sensors, valleytronics, and next-generation optoelectronics. Here, we synthesize a few-nanometer-thick BixOySez compound that strongly resembles a rare R3m bismuth oxide (Bi2O3) phase and combine it with monolayer TMDs, which are highly sensitive to their environment. We use the resulting 2D heterostructure to study oxygen transport through BixOySez into the interlayer region, whereby the 2D material properties are modulated, finding extraordinarily fast diffusion near room temperature under laser exposure. The oxygen diffusion enables reversible and precise modification of the 2D material properties by controllably intercalating and deintercalating oxygen. Changes are spatially confined, enabling sub-micrometer features (e.g., pixels), and are long-term stable for more than 221 days. Our work suggests few-nanometer-thick BixOySez is a promising unexplored room-temperature oxygen transporter. Additionally, our findings suggest that the mechanism can be applied to other 2D materials as a generalized method to manipulate their properties with high precision and sub-micrometer spatial resolution.
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Current-generated spin arising from spin-momentum locking in topological insulator (TI) surface states has been shown to switch the magnetization of an adjacent ferromagnet (FM) via spin-orbit torque (SOT) with a much higher efficiency than heavy metals. However, in such FM/TI heterostructures, most of the current is shunted through the FM metal due to its lower resistance, and recent calculations have also shown that topological surface states can be significantly impacted when interfaced with an FM metal such as Ni and Co. Hence, placing an insulating layer between the TI and FM will not only prevent current shunting, therefore minimizing overall power consumption, but may also help preserve the topological surface states at the interface. Here, we report the van der Waals epitaxial growth of ß-phase In2Se3 on Bi2Se3 by molecular beam epitaxy and demonstrate its spin sensitivity by the electrical detection of current-generated spin in Bi2Se3 surface states using a Fe/In2Se3 detector contact. Our density functional calculations further confirm that the linear dispersion and spin texture of the Bi2Se3 surface states are indeed preserved at the In2Se3/Bi2Se3 interface. This demonstration of an epitaxial crystalline spin-sensitive barrier that can be grown directly on Bi2Se3, and verification that it preserves the topological surface state, is electrically insulating and spin-sensitive, is an important step toward minimizing overall power consumption in SOT switching in TI/FM heterostructures in fully epitaxial topological spintronic devices.
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When a polarized light beam is incident upon the surface of a magnetic material, the reflected light undergoes a polarization rotation1. This magneto-optical Kerr effect (MOKE) has been intensively studied in a variety of ferro- and ferrimagnetic materials because it provides a powerful probe for electronic and magnetic properties2, 3 as well as for various applications including magneto-optical recording4. Recently, there has been a surge of interest in antiferromagnets (AFMs) as prospective spintronic materials for high-density and ultrafast memory devices, owing to their vanishingly small stray field and orders of magnitude faster spin dynamics compared to their ferromagnetic counterparts5-9. In fact, the MOKE has proven useful for the study and application of the antiferromagnetic (AF) state. Although limited to insulators, certain types of AFMs are known to exhibit a large MOKE, as they are weak ferromagnets due to canting of the otherwise collinear spin structure10-14. Here we report the first observation of a large MOKE signal in an AF metal at room temperature. In particular, we find that despite a vanishingly small magnetization of M ~0.002 µB/Mn, the non-collinear AF metal Mn3Sn15 exhibits a large zero-field MOKE with a polar Kerr rotation angle of 20 milli-degrees, comparable to ferromagnetic metals. Our first-principles calculations have clarified that ferroic ordering of magnetic octupoles in the non-collinear Néel state16 may cause a large MOKE even in its fully compensated AF state without spin magnetization. This large MOKE further allows imaging of the magnetic octupole domains and their reversal induced by magnetic field. The observation of a large MOKE in an AF metal should open new avenues for the study of domain dynamics as well as spintronics using AFMs.
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We report room-temperature negative magnetoresistance in ferromagnet-graphene-ferromagnet (FM|Gr|FM) junctions with minority spin polarization exceeding 80%, consistent with predictions of strong minority spin filtering. We fabricated arrays of such junctions via chemical vapor deposition of multilayer graphene on lattice-matched single-crystal NiFe(111) films and standard photolithographic patterning and etching techniques. The junctions exhibit metallic transport behavior, low resistance, and the negative magnetoresistance characteristic of a minority spin filter interface throughout the temperature range 10 to 300 K. We develop a device model to incorporate the predicted spin filtering by explicitly treating a metallic minority spin channel with spin current conversion and a tunnel barrier majority spin channel and extract spin polarization of at least 80% in the graphene layer in our structures. The junctions also show antiferromagnetic coupling, consistent with several recent predictions. The methods and findings are relevant to fast-readout low-power magnetic random access memory technology, spin logic devices, and low-power magnetic field sensors.
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We demonstrate that hydrogenated graphene performs as a homoepitaxial tunnel barrier on a graphene charge/spin channel. We examine the tunneling behavior through measuring the IV curves and zero bias resistance. We also fabricate hydrogenated graphene/graphene nonlocal spin valves and measure the spin lifetimes using the Hanle effect, with spintronic nonlocal spin valve operation demonstrated up to room temperature. We show that while hydrogenated graphene indeed allows for spin transport in graphene and has many advantages over oxide tunnel barriers, it does not perform as well as similar fluorinated graphene/graphene devices, possibly due to the presence of magnetic moments in the hydrogenated graphene that act as spin scatterers.
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The coupled imperatives for reduced heat dissipation and power consumption in high-density electronics have rekindled interest in devices based on tunnelling. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, layer uniformity, interface stability and electronic states that severely complicate fabrication and compromise performance. Two-dimensional materials such as graphene obviate these issues and offer a new paradigm for tunnel barriers. Here we demonstrate a homoepitaxial tunnel barrier structure in which graphene serves as both the tunnel barrier and the high-mobility transport channel. We fluorinate the top layer of a graphene bilayer to decouple it from the bottom layer, so that it serves as a single-monolayer tunnel barrier for both charge and spin injection into the lower graphene channel. We demonstrate high spin injection efficiency with a tunnelling spin polarization >60%, lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the Hanle effect.
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Graphene has been widely studied for its high in-plane charge carrier mobility and long spin diffusion lengths. In contrast, the out-of-plane charge and spin transport behavior of this atomically thin material have not been well addressed. We show here that while graphene exhibits metallic conductivity in-plane, it serves effectively as an insulator for transport perpendicular to the plane. We report fabrication of tunnel junctions using single-layer graphene between two ferromagnetic metal layers in a fully scalable photolithographic process. The transport occurs by quantum tunneling perpendicular to the graphene plane and preserves a net spin polarization of the current from the contact so that the structures exhibit tunneling magnetoresistance to 425 K. These results demonstrate that graphene can function as an effective tunnel barrier for both charge and spin-based devices and enable realization of more complex graphene-based devices for highly functional nanoscale circuits, such as tunnel transistors, nonvolatile magnetic memory, and reprogrammable spin logic.
Asunto(s)
Electrodos , Grafito/química , Imanes , Semiconductores , Diseño de Equipo , Análisis de Falla de EquipoRESUMEN
The use of carrier spin in semiconductors is a promising route towards new device functionality and performance. Ferromagnetic semiconductors (FMSs) are promising materials in this effort. An n-type FMS that can be epitaxially grown on a common device substrate is especially attractive. Here, we report electrical injection of spin-polarized electrons from an n-type FMS, CdCr(2)Se(4), into an AlGaAs/GaAs-based light-emitting diode structure. An analysis of the electroluminescence polarization based on quantum selection rules provides a direct measure of the sign and magnitude of the injected electron spin polarization. The sign reflects minority rather than majority spin injection, consistent with our density-functional-theory calculations of the CdCr(2)Se(4) conduction-band edge. This approach confirms the exchange-split band structure and spin-polarized carrier population of an FMS, and demonstrates a litmus test for these FMS hallmarks that discriminates against spurious contributions from magnetic precipitates.
